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    KM6465 Search Results

    KM6465 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6465A-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465A-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465A-45 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465AL-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465AL-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465AL-45 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465B-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465B-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465B-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465B-15L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465B-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465B-20L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465B-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465B-25L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6465BLP-12 Samsung Electronics 16,384 WORD x 4 Bit CMOS Static RAM Scan PDF
    KM6465BLP-15 Samsung Electronics 16,384 WORD x 4 Bit CMOS Static RAM Scan PDF
    KM6465BLP-20 Samsung Electronics 16,384 WORD x 4 Bit CMOS Static RAM Scan PDF
    KM6465BLP-25 Samsung Electronics 16,384 WORD x 4 Bit CMOS Static RAM Scan PDF
    KM6465BP-12 Samsung Electronics 16,384 WORD x 4 Bit CMOS Static RAM Scan PDF
    KM6465BP-15 Samsung Electronics 16,384 WORD x 4 Bit CMOS Static RAM Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: CM O S SRAM KM6465B 16,384 WORD x 4 Bit CMOS Static RAM FEATURES • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6465B-12 :140mA (max.) KM6465B-15 :130mA (max.) KM6465B-20 :120mA (max.)


    OCR Scan     		PDF KM6465B KM6465B-12 140mA KM6465B-15 130mA KM6465B-20 120mA KM6465B-2S 110mA KM6465BP:

    6465B

    Abstract: No abstract text available
    Text: KM 6465B CM O S SRAM 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6465B-12 : 140mA (max.) KM6465B-15 : 130mA (max.)


    OCR Scan     		PDF 6465B KM6465B-12 140mA KM6465B-15 130mA KM6465B-20 120mA KM6465B-25 110mA KM6465BP: 6465B

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6465B/BL 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) 100^1A (max.) L-Version • Operating KM6465BP/J-12: 140mA (max.)


    OCR Scan     		PDF KM6465B/BL KM6465BP/J-12: 140mA KM6465BP/J-15: 130mA KM6465BP/J-20: 120mA KM6465BP/J-25: 110mA 22-pin

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E » • TTbMlMc? OOlMObS TTÖ KM6465A/KM6465AL shgk CMOS SRAM 1 6 K x 4 Bit St ati c R A M FEATURES GENERAL DESCRIPTION • Fast Access Time: 25, 35, 45ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS): 2mA (max.)


    OCR Scan     		PDF KM6465A/KM6465AL 120mA KM6465AP/ALP: 22-pin KM6465A/AL 536-bit 7Tb4142

    batery

    Abstract: KM6465B-12 KM6465B-15 KM6465B-20 KM6465B-25
    Text: CM O S SRAM KM6465B 16,384 WORD x 4 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast A ccess Tim e: 12, 15, 20, 25ns max. • Lo w P ow er D issipatio n S tandby (TTL) : 35m A (max.) (CMOS): 1m A (max.) ' • Operating KM6465B-12 :140m A (max.)


    OCR Scan     		PDF KM6465B/BL KM6465B-12 140mA KM6465B-15 130mA KM6465B-20 120mA KM6465B-25 110mA KM6465BP batery KM6465B-12 KM6465B-15 KM6465B-20 KM6465B-25

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6465B 16Kx4Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12, 15, 2 0 ,2 5 ns Max. T h e K M 6 4 6 5 B is a 6 5 ,5 3 6 -b it • Low Pow er Dissipation Random Access Memory organized as 16,3 84 words by Standby (TTL) h igh-speed S tatic


    OCR Scan     		PDF KM6465B 16Kx4Bit 6465B

    SOJ 44

    Abstract: 1MX1 KM6865
    Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001


    OCR Scan     		PDF KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6465A/KM6465AL 1 6 K x 4 Bit Static RAM FEATURES GENERAL DESCRIPTION • F a s t A c c e s s T im e : 2 5, 3 5 , 4 5 n s m ax . • Low P ow er D issipation S tandby (TTL) : 3 0 m A (m ax.) (C M O S): 2m A (max.) 100/tA (m ax.) L Version The


    OCR Scan     		PDF KM6465A/KM6465AL 100/tA 22-pin

    tpw34

    Abstract: No abstract text available
    Text: CMOS SRAM KM6465A/KM6465AL 1 6 K x 4 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 25, 35, 45ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS): 2mA (max.) 100flA (max.) L-Version Operating : 120mA (max.) • Single 5 V ± 1 0 % Power Supply


    OCR Scan     		PDF KM6465A/KM6465AL 100flA 120mA KM6465AP/ALP: 22-pin KM6465A/AL 536-bit tpw34

    KM6465BP

    Abstract: No abstract text available
    Text: KM6465B/BL CMOS SRAM 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) 100^A (max.) L-Version • Operating KM6465BP/J-12: 140mA (max.)


    OCR Scan     		PDF KM6465B/BL KM6465BP/J-12: 140mA KM6465BP/J-15: 130mA KM6465BP/J-20: 120mA KM6465BP/J-25: 110mA 22-pin KM6465BP

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6465A/KM6465AL 1 6 K x 4 Bit Static R A M FEATURES GENERAL DESCRIPTION • Fast Access Time: 25, 35, 45ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS): 2mA (max.) 100>jA (max.) L-Version Operating : 120mA (max.) • Single 5V ± 10% Power Supply


    OCR Scan     		PDF KM6465A/KM6465AL 120mA KM6465AP/ALP: 22-pin KM6465A/AL 536-bit

    23E D

    Abstract: km6465
    Text: SAMSUNG SEMICONDUCTOR INC 23E D 7^4145 DGOaab4 ñ • KM6465P/KM6465LP CMOS SRAM 16K x 4 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 2 mA (max.) (CMOS): 100 (iA (max.) Operating


    OCR Scan     		PDF KM6465P/KM6465LP 22-pin 300mil) KM6465P/LP 536-bit 23E D km6465

    km6465

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7E D • 7^4142 0 Ù I 7 5 4 2 3^b « S f lG K KM6465B/BL CMOS SRAM 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.)


    OCR Scan     		PDF KM6465B/BL 100fiA KM6465BP/J-12: 140mA KM6465BP/J-15: 130mA KM6465BP/J-20: 120mA KM6465BP/J-25: 110mA km6465

    IMS1620-35

    Abstract: IMS1620-45 IMS1620-55 IMS1620-70 IMS1620L-35 IMS1620L-45 IMS1620L-55 IMS5788H-5
    Text: - 82 6 4 K x m « it £ PC TAAC max ns) TCAC max (ns) TOE max (ns) CMOS S t a t i c RAM (1 6 3 8 4 X 4 ) A 2 2 P I N & TOH •in (ns) TOD max (ns) TWP nun (ns) TiR max (ns) V D D or V C C (ns) TWD nin (ns) TDS ■in (ns) TDH (V) I DD max (■A) A I I'D STANDBY


    OCR Scan     		PDF 6384X4) IMS5788H-5 M5788K-5 1W65788M-5 IMS1620-35 64S5LP-35 KHE4B5LP-45 KM6465P-25 KMS465P-35 KM6465P-45 IMS1620-45 IMS1620-55 IMS1620-70 IMS1620L-35 IMS1620L-45 IMS1620L-55

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    M5M5188P-55

    Abstract: MCM6288P30 MB81C74-35 LH5162-25 LH5162-35 LH5165-25 LH5165-35 M5M5188P-45 MB81C74-25 P4C188
    Text: 71 6 4 K A X £ £ it £ °C TAAC max (ns) TCAC max (ns) TOR max (ns) -y TOH min (ns) CMOS y -1TOD (ns) y TWP min (ns) S t a t i c tt & TDS ram (ns) RAM ( 1 6 3 8 4 x 4 ) M . TDH rain (ns) TWD (ns) TWR max (ns) V D D o- V C C (VI 2 2 P i N À m I DD max


    OCR Scan     		PDF 384X4) 22PiN7188 KM64B5B-25L LH5162-25 LH5162-35 LH5165-25 P4C188-45 P4C188-55 P4C188L-17 M5M5188P-55 MCM6288P30 MB81C74-35 LH5165-35 M5M5188P-45 MB81C74-25 P4C188

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    tc55416p

    Abstract: MB81C74-35 MCM6288P30 LH5162-25 LH5162-35 LH5165-25 LH5165-35 M5M5188P-45 M5M5188P-55 MB81C74-25
    Text: 71 6 4 K A X £ £ it £ °C TAAC max (ns) TCAC max (ns) TOR max (ns) -y TOH min (ns) CMOS -1- y TOD (ns) y TWP min (ns) S t a t i c & tt TDS ram (ns) RAM ( 1 6 3 8 4 x 4 ) m M . TDH rain (ns) TWD (ns) TWR max (ns) V D D o- V C C (VI 2 2 P i N I DD max (mA)


    OCR Scan     		PDF 384X4) 22PiN7188 KM64B5B-25L LH5162-25 LH5162-35 LH5165-25 VB1C62P-55L V61CB2P-70 V61C62P-70L VT62KS4-25 tc55416p MB81C74-35 MCM6288P30 LH5165-35 M5M5188P-45 M5M5188P-55 MB81C74-25

    DT 7188

    Abstract: HY62C88-70 HY62C88L-35 HY62C88L-45 HY62C88L-55 HY62C88L-70 IDT7188L45 IDT7188L70 IDT7188L85
    Text: - 70 6 4 K m tfc £ iâ&ïcffl CC TAAC •ax ns) TCAC max (ns) TOE max (ns) CMOS 7 X 4 TOH sin (ns) y / TOD nax (ns) TWP min (ns) S t a t i c [1 A M ( I 6 3 8 4 X 4 ) f t it TDS rain (ris) « T'WR max (ns) V D D or V C C I DD max (ns) TWD rain (ns) (V) (• A)


    OCR Scan     		PDF 22PIN7188 Ot/1V01 HY62C88-70 HY62C88L-35 HY62C88L-45 HY62C88L-55 KM6465AL-45 KM6465B-12 KM6465B-15 KM6465B-20 DT 7188 HY62C88L-70 IDT7188L45 IDT7188L70 IDT7188L85

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL