Untitled
Abstract: No abstract text available
Text: KM48C8000B, KM48C8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), package type (SOJ or TSOP-II) are optional features
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Original
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KM48C8000B,
KM48C8100B
400mil
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PDF
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KM48c8100
Abstract: No abstract text available
Text: KM48C8000B, KM48C8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), package type (SOJ or TSOP-II) are optional features
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Original
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KM48C8000B,
KM48C8100B
400mil
KM48c8100
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PDF
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Untitled
Abstract: No abstract text available
Text: KM48C8000C, KM48C8100C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time ( -5 or -6), package type (SOJ or TSOP-II) are optional features of
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Original
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KM48C8000C,
KM48C8100C
400mil
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C80 8 3BK/BS KMM372C80(8)3BK/BS Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM372C80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C80(8)3B consists of nine CMOS 8Mx8bits DRAMs
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Original
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KMM372C80
8Mx72
8Mx72bits
400mil
168-pin
100Max
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C80 8 3CK/CS Buffered 8Mx64 DIMM (8Mx8 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. KMM364C80(8)3CK/CS DRAM MODULE KMM364C80(8)3CK/CS
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Original
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KMM364C80
8Mx64
8Mx64bits
400mil
168-pin
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PDF
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KMM372C803CK
Abstract: KMM372C803CS KMM372C883CK KMM372C883CS
Text: DRAM MODULE KMM372C80 8 3CK/CS KMM372C80(8)3CK/CS Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM372C80(8)3C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C80(8)3C consists of nine CMOS 8Mx8bits DRAMs
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Original
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KMM372C80
8Mx72
8Mx72bits
400mil
168-pin
100Max
KMM372C803CK
KMM372C803CS
KMM372C883CK
KMM372C883CS
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PDF
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KMM372C803CK
Abstract: KMM372C803CS KMM372C883CK KMM372C883CS
Text: DRAM MODULE KMM372C80 8 3CK/CS Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372C80(8)3CK/CS DRAM MODULE KMM372C80(8)3CK/CS
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Original
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KMM372C80
8Mx72
8Mx72bits
400mil
KMM372C803CK
KMM372C803CS
KMM372C883CK
KMM372C883CS
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PDF
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KM48c8100A
Abstract: No abstract text available
Text: KM48C8000A, KM48C8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cucye 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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KM48C8000A,
KM48C8100A
KM48c8100A
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PDF
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KM48c8100A
Abstract: No abstract text available
Text: KM48C8000A, KM48C8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cucye 4K Ref. or 8K Ref. , access time(-5, -6,
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OCR Scan
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KM48C8000A,
KM48C8100A
KM48C8000A
KM48C8100A
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PDF
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KM48C8000AS
Abstract: KM48c8100A KM48c8100as
Text: KMM364C803AK/AS KMM364C883AK/AS DRAM MODULE KMM364C803AK/AS & KMM364C883AK/AS Fast Page Mode 8Mx64 DRAM DIMM based on 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C80 8 3A is a 8M bit x 64 Dynamic RAM high density memory module. The
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OCR Scan
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KMM364C803AK/AS
KMM364C883AK/AS
KMM364C803AK/AS
KMM364C883AK/AS
8Mx64
KMM364C80
400mil
48pin
168-pin
KM48C8000AS
KM48c8100A
KM48c8100as
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PDF
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KM44C4105C-6
Abstract: KM44C16004
Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7
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OCR Scan
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KM41C4000D-5
KM41C4000D-6
KM41C4000D-7
KM41C4000D-L5
KM41C4000D-L6
KM41V4000D-6
KM41V4000D-L6
KM41C4000D-L7
KM41V4000D-7
KM41V4000D-L7
KM44C4105C-6
KM44C16004
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PDF
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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OCR Scan
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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PDF
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km48c8100as
Abstract: No abstract text available
Text: KMM372C803AK/AS KM M372C883AK/AS DRAM MODULE KMM372C803AK/AS & KMM372C883AK/AS Fast Page Mode 8Mx72 DRAM DIMM with ECC based on 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C80 8 3A is a 8M bit x 72 • Part Identification Part number
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OCR Scan
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KMM372C803AK/AS
M372C883AK/AS
KMM372C883AK/AS
8Mx72
KMM372C80
KMM372C803AK
400mil
KMM372C803AS
km48c8100as
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PDF
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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OCR Scan
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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PDF
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KM44C16100A
Abstract: km44c16000
Text: MEMORY ICs D e n s ity 64M bit O r* D *IUAA. rVwVr 16Mx4 5V±10% 3.3V+0.3V FUNCTION GUIDE Baokaou. P u rrN o m ta r. KM44C16000A# Fast Page 8K K : 32 Pin SOJ [400mil] KM44C16100A# Fast Page(4K) S : 32 pin TSOP ll(Forward) KM44C16004A# EDO(8K) KM44C16104A#
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OCR Scan
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KM44C16000A#
KM44C16100A#
KM44C16004A#
KM44C16104A#
400mil]
16Mx4
KM44V16000A#
KM44V16000A
KM44V16100A#
KM44C16100A
km44c16000
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PDF
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KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
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OCR Scan
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KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
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PDF
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km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
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OCR Scan
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KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
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PDF
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Untitled
Abstract: No abstract text available
Text: KM48C8000B, KM48C81OOB CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde{4K Ref. or 8K Ref , access time -45, -5 or -6), package type (SOJ or TSOP-II) are optional features
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OCR Scan
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KM48C8000B,
KM48C81OOB
KM48C8000B
KM48C8100B
tRASSSl00u8,
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PDF
|
Untitled
Abstract: No abstract text available
Text: KMM364C803AK/AS KMM364C883A K/AS DRAM MODULE KMM364C803AK/AS & KMM364C883AK/AS Fast Page Mode 8Mx64 DRAM DIMM based on 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C80 8 3A is a 8M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The
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OCR Scan
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KMM364C803AK/AS
KMM364C883A
KMM364C883AK/AS
8Mx64
KMM364C80
364C80
M364C803AK
400mil
M364C803AS
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PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C80 8 3BK/BS KM M364C80(8)3 BK/BS Fast Page Mode 8M x 64 DRAM DIMM Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C80(8)3B is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C80(8)3B consists of eight CMOS 8Mx8bits DRAMs
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OCR Scan
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KMM364C80
M364C80
8Mx64bits
400mil
168-pin
KMM364C803BK
KMM364C803BS
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PDF
|
k2624
Abstract: No abstract text available
Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#
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OCR Scan
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KM41C4000D#
C4000D
KM41V4000D#
KM41V4000W-L
KM44C1000D#
KM44C10OOD
KM44C1003D#
KM44C1004D#
KM44C1004D
KM44C1005D#
k2624
|
PDF
|
ltw connector 12 pin
Abstract: No abstract text available
Text: DRAM MODULE KM M364C80 8 3B K/BS KMM364C80(8)3BK/BS Fast Page Mode 8M x 64 DRAM DIMM Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C80(8)3B is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C80(8)3B consists of eight CMOS 8Mx8bits DRAMs
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OCR Scan
|
KMM364C80
8Mx64bits
400mil
168-pin
M364C80
KMM364C803BK
KMM364C803BS
ltw connector 12 pin
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PDF
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48c8000
Abstract: No abstract text available
Text: DRAM M ODULE KM M 3 72C80 8 3B K/B S Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 72C80( 8) 3B K/B S Revi si on Hi st or y Version 0.0 (Sept, 1 997) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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OCR Scan
|
72C80(
8Mx72
KMM372C80
8Mx72bits
400mil
48c8000
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PDF
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