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    1004CL

    Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
    Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page


    OCR Scan     		PDF KM41C1000D# KM41C1000D-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# 128Kx8 KM48C128# KM48C128 KM48C124# 1004CL KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP

    48c8000

    Abstract: No abstract text available
    Text: DRAM M ODULE KM M 3 72C80 8 3B K/B S Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 72C80( 8) 3B K/B S Revi si on Hi st or y Version 0.0 (Sept, 1 997) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF 72C80( 8Mx72 KMM372C80 8Mx72bits 400mil 48c8000