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    KM44S4020 Search Results

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    KM44S4020 Price and Stock

    SEC KM44S4020AT-G10

    SDRAM, 4M x 4, 44 Pin, Plastic, TSOP
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    Quest Components KM44S4020AT-G10 839
    • 1 $3
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    • 100 $3
    • 1000 $1.125
    • 10000 $1.125
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    Samsung Semiconductor KM44S4020CT-GL

    4M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM44S4020CT-GL 709
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    Samsung Semiconductor KM44S4020AT-G10

    SDRAM, 4M x 4, 44 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM44S4020AT-G10 31
    • 1 $1.875
    • 10 $1.725
    • 100 $1.5
    • 1000 $1.5
    • 10000 $1.5
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    Samsung Semiconductor KM44S4020CT-G10

    SDRAM, 4M x 4, 44 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM44S4020CT-G10 5
    • 1 $1.875
    • 10 $1.725
    • 100 $1.725
    • 1000 $1.725
    • 10000 $1.725
    		Buy Now

    Samsung Electronics Co. Ltd KM44S4020CT-G10

    IN STOCK SHIP TODAY
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    Component Electronics, Inc KM44S4020CT-G10 32
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    KM44S4020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM44S4020C PC100

    KM44S4020CT

    Abstract: KM44S4020
    Text: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM44S4020C PC100 KM44S4020CT KM44S4020

    CDC2509

    Abstract: KMM375S400CT-G0 KMM375S400CT-G8 KMM375S400CT-GH KMM375S400CT-GL KM44S4020
    Text: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 -. Input leakage current (Inputs) I IL is updated. -. Input Capacitances are updated. Revision 7 (May 1998) -. Revised PLL Input cap. 20pF to 5pF. -. CLK Input Cap. is added by PLL Input Cap. (5pF)


    Original     		PDF KMM375S400CT KMM375S400CT 4Mx72 CDC2516 100Min 540Min) 150Max CDC2509 KMM375S400CT-G0 KMM375S400CT-G8 KMM375S400CT-GH KMM375S400CT-GL KM44S4020

    KM48S2020

    Abstract: KM48S2120 KM416S1120D KM44S4120D
    Text: Memory Application Team Tel: 82-331-209-5371 Fax: 82-2-760-7990 GRAPHIC MEMORY APPLICATION NOTE Refresh Cycle change from 4K/64ms in C-die to 2K/32ms in 16M SDRAM D-die Refresh cycle time change from 4K/64ms to 2K/32ms This note has been prepared in an attempt to inform you that the refresh cycle time of


    Original     		PDF 4K/64ms 2K/32ms 2K/32ms 2K/32ms. KM48S2020 KM48S2120 KM416S1120D KM44S4120D

    CDC2509

    Abstract: KM44S4020 KMM375S400CT-G0 KMM375S400CT-G8 KMM375S400CT-GH KMM375S400CT-GL 0A10
    Text: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 -. Input leakage current (Inputs) I IL is updated. -. Input Capacitances are updated. REV. 6 May '98 Preliminary KMM375S400CT SDRAM MODULE KMM375S400CT SDRAM DIMM 4Mx72 SDRAM DIMM with PLL & Register based on 4Mx4, 4K Ref., 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM375S400CT KMM375S400CT 4Mx72 400mil 20-bits 24-pin CDC2516 CDC2509 KM44S4020 KMM375S400CT-G0 KMM375S400CT-G8 KMM375S400CT-GH KMM375S400CT-GL 0A10

    hy57v16801

    Abstract: KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out
    Text: 2M/4M x 72 SYNCHRONOUS DRAM DIMM REFERENCE DESIGN APPLICATION NOTE AN-156 Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION DESIGN KIT CONTENTS Expectations of main memory performance have finally reached a point that calls for the use of synchronous DRAMs.


    Original     		PDF AN-156 200pin 4Mx72 A0-11 DQ0-72 hy57v16801 KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out

    schematic circuit adsl router part list

    Abstract: 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon
    Text: Excellence in Low-Power The way MICOM/DSP should be KS32C5000 A /KS32C50100 32-bit RISC Microcontroller for Network Solution Mar. 1999 ELECTRONICS Contents n n n Network Protocol n What is Network ? n OSI Reference Model and TCP/IP n TCP/IP Networking Software & Basic Protocol


    Original     		PDF KS32C5000 /KS32C50100 32-bit Print3ff3024 0x1a048060 0x3ff3028 0x1c04a060 0x3ff302c 0x04000380 0x3ff3030 schematic circuit adsl router part list 29e010 78R05 KS32C50100 SNDS100 78R33 MAX232 CPE 29e010 datasheet c-mac stp samsung ribbon

    KM48S2020BT-G10

    Abstract: KM48S8030AT-G10 KM48S8030BT-G10 KM44S4020BT-G10 D4564821G5-A10-9JF KM48S2020AT KM48S2020AT-G10 MT48LC2M8A1 D4564821G5-A10 Viking
    Text: This is a snapshot of our AlphaPC 164LX DIMM Qualification testing as of the 15th of October 1997. DIMMs PASSED QUALIFICATION TESTING Note :- AlphaPC 164LX uses x72 DIMMs only. Vendor MB/ Bank Dataram Kingston Kingston Kingston Micron Micron NEC NEC NEC NEC


    Original     		PDF 164LX KTV164LX/32 KTV164LX/64 KTV164LX/128 MT9LSDT272AG-66CL2 MT18LSDT472AG-66CL2 MC-452AA724F-A10 MC-454AC724F-A10 MC-458AA724F-A10 KM48S2020BT-G10 KM48S8030AT-G10 KM48S8030BT-G10 KM44S4020BT-G10 D4564821G5-A10-9JF KM48S2020AT KM48S2020AT-G10 MT48LC2M8A1 D4564821G5-A10 Viking

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    Untitled

    Abstract: No abstract text available
    Text: KM44S4020B CMOS SDRAM 2M x 4Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3.3V power supply The KM44S4020B is 16,777.216 bits synchronous high data LVTTL compatible with multiplexed address rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits,


    OCR Scan     		PDF KM44S4020B KM44S4020B 10/AP

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030

    Untitled

    Abstract: No abstract text available
    Text: KM44S4020C CMOS SDRAM Revision History Revision ,4 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. REV. 4 Nov. '97 ELECTRONICS CMOS SDRAM


    OCR Scan     		PDF KM44S4020C 44S4020C 10/AP

    KM44S4020AT

    Abstract: 71142 a
    Text: KM44S4020AT SDRAM 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL compatible with multiplexed address. • Dual Bank. • MRS cycle with address key programs. -. CAS Latency 1, 2, 3 -. Burst Length {1, 2, 4, 8 & Full page)


    OCR Scan     		PDF KM44S4020AT KM44S4020A 44S4020A 44-TS0P2-400F 44-TSOP2-400R 0Q3b25& 71142 a

    KM44S4020AT10

    Abstract: KM44S4020A
    Text: PRELIMINARY KM44S4020A 4M X CMOS SDRAM 4 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEATURES - JEDEC standard 3.3V power supply. - LVTTL compatible with multiplexed address. - Dual bank / Pulse ftAS. - WCBR cycle with address key programs. • Latency Access from column address


    OCR Scan     		PDF KM44S4020A KM44S4020A G02054b KM44S4020AT10

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT

    KM44S4020CTG

    Abstract: KM44S4020C
    Text: KM44S4020C CMOS SDRAM 2M x 4BH x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S4020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		PDF KM44S4020C KM44S4020C KM44S4020CTG

    samsung power module

    Abstract: KMM374S400BTN-G2 ADQ37 71b4
    Text: KMM374S400BTN NEW JEDEC SDRAM MODULE KMM374S400BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S400BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM374S400BTN KMM374S400BTN 4Mx72 400mil 168-pin KMM374S400BTN-G8 KMM374S40OBTN-G0 KMM374S400BTN-G2 samsung power module ADQ37 71b4

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 Input leakage current (Inputs) I IL is updated. Input Capacitances are updated. Revision 7 (May 1998) -. Revised PLL Input cap. 20pF to 5pF. -. CLK Input Cap. is added by PLL Input Cap. (5pF)


    OCR Scan     		PDF KMM375S400CT KMM375S400CT 4Mx72 M375S400CT 150Max SN74AL VCH162836 KM44S4020CT

    CDC2509

    Abstract: No abstract text available
    Text: Prelim inary SDRAM MODULE KM M375S400CT KMM375S400CT SDRAM DIMM 4Mx72 SDRAM DIMM with PLL & Register based on 4Mx4, 4K Ref., 3.3V Synchronous DRAMs with SPD G E N E R A L DESCRIPTION FEATURE The Samsung KMM375S400CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM375S400CT M375S400CT 4Mx72 400mil 20-bits 24-pin 168-pin CDC2509

    Untitled

    Abstract: No abstract text available
    Text: K M 4 4 S 4 0 2 1BT SDRAM ELECTRONICS 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM44S4020B/KM44S4021B KM44S4021BT) 44-TS0P2-400F 44-TSOP2-400R 0Q3b25&

    CDC2509

    Abstract: No abstract text available
    Text: Preliminary KMM378S400CT SDRAM MODULE KMM378S400CT SDRAM DIMM 4M x72 SDRAM DIMM with PLL & R egister based on 4M x4, 4K Ref. 3.3V S ynchronous DRAM s FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM378S400CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM378S400CT KMM378S400CT 400mil 24-pin 200-pin 200pin CDC2509

    Untitled

    Abstract: No abstract text available
    Text: KMM366S400BTN NEW JEDEC SDRAM MODULE KMM366S400BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S400BTN is a 4M bit x 64 Synchronous Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S400BTN KMM366S400BTN 4Mx64 400mil 168-pin KMM366S400BTN-G8 KMM366S400BTN-G0 KMM366S400BTN-G2