KM48S2020CT-G10
Abstract: KMM366S403CTL KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G
Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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Original
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KMM366S403CTL
200mV.
KMM366S403CTL
4Mx64
66MHz
KM48S2020CT-G10
KMM366S403CTL-G0
KM48S2020
KM48S2020CT-G
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PDF
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CDC2509
Abstract: KM48S2020 KMM378S203CT-G0 KMM378S203CT-G8 KMM378S203CT-GH KMM378S203CT-GL MA3910
Text: Preliminary KMM378S203CT SDRAM MODULE KMM378S203CT SDRAM DIMM 2Mx72 SDRAM DIMM with PLL & Register based on 2Mx8, 4K Ref. 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S203CT is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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Original
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KMM378S203CT
KMM378S203CT
2Mx72
KMM378S203CT-G8
KMM378S203CT-GH
KMM378S203CT-GL
KMM378S203CT-G0
400mil
CDC2509
KM48S2020
KMM378S203CT-G0
KMM378S203CT-G8
KMM378S203CT-GH
KMM378S203CT-GL
MA3910
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PDF
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KMM374S403CTS-G8
Abstract: KMM374S403CTS-GH KMM374S403CTS-GL km48s2020ct
Text: PC100 Unbuffered DIMM KMM374S403CTS KMM374S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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Original
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PC100
KMM374S403CTS
KMM374S403CTS
4Mx64
400mil
168-pin
KMM374S403CTS-G8
KMM374S403CTS-GH
KMM374S403CTS-GL
km48s2020ct
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PDF
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km48s2020ct
Abstract: KMM374S403CTL-G0 KM48S2020
Text: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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Original
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KMM374S403CTL
200mV.
KMM374S403CTL
4Mx72
100Min
540Min)
150Max
81Max)
km48s2020ct
KMM374S403CTL-G0
KM48S2020
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PDF
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KMM374S203CTL-G0
Abstract: No abstract text available
Text: KMM374S203CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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Original
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KMM374S203CTL
200mV.
KMM374S203CTL
2Mx72
KMM374S203CT57)
150Max
81Max)
118DIA
000DIA
KMM374S203CTL-G0
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PDF
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KMM374S403CT
Abstract: KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL km48s2020ct bdl 39
Text: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.
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Original
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KMM374S403CT
PC100
KMM374S403CT
4Mx72
Syn450
100Min
540Min)
KMM374S403CT-G8
KMM374S403CT-GH
KMM374S403CT-GL
km48s2020ct
bdl 39
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PDF
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KM48S8030BT-GL
Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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Original
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PC100
KM48S8030BT-GL
nn5264805tt-b60
KM48S2020CT-GL
0364804CT3B-260
d4564163g5
nt56v1680a0t
D4564841g5
81F641642B-103FN
M5M4V16S30DTP
Siemens 9832
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PDF
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KM48S2020CT-F10
Abstract: KMM466S203CT-F0 KM48S2020
Text: KMM466S203CT 144pin SDRAM SODIMM Revision History Revision . 2 Mar. 1998 •Some Parameter values & Charcteristeristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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Original
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KMM466S203CT
144pin
200mV.
KMM466S203CT
2Mx64
66MHz
KM48S2020CT-F10
KMM466S203CT-F0
KM48S2020
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PDF
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km48s2020ct
Abstract: KM48S2020CT-G
Text: KM48S2020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.
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Original
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KM48S2020C
PC100
km48s2020ct
KM48S2020CT-G
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PDF
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km48s2020ct
Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks
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OCR Scan
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
KM44S16020BT
KM48S8020BT
KM416S4020BT
KM416S4021BT
KM44S160308T
KM48S8030BT
S823B
4MX16
54-PIN
u108h
KM48S2020
44s16030
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PDF
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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OCR Scan
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
------------------------------------16Mx4
4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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PDF
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CDC2509
Abstract: No abstract text available
Text: Preliminary KM M378S203CT SDRAM MODULE KMM378S203CT SDRAM DIMM 2Mx72 SDRAM DIMM with PLL & Register based on 2Mx8, 4K Ref. 3.3V Synchronous DRAMs FEATURE G ENER AL D ESCRIPTION • Performance range The Samsung KMM378S203CT is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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M378S203CT
KMM378S203CT
2Mx72
KMM378S203CT-G8
125MHz
400mil
KMM378S203CT-GH
100MHz
CDC2509
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM374S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs) : ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.
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OCR Scan
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KMM374S403CTL
200mV.
4Mx72
KMM374S4and
150Max
250Max)
KM48S2020CT
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PDF
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KMM366S403CTL-GO
Abstract: No abstract text available
Text: KMM366S403CTL PC66 SDRAM MODULE KMM366S403CTL SDRAM DIMM 4 M x 6 4 S D R A M D IM M b a se d on 2 M x 8 ,4 K R efresh, 3 .3 V S y n c h ro n o u s D R A M s w ith S P D GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM366S403CTL
KMM366S403CTL
400mil
168-pin
000DIA
KM48S2020CT
KMM366S403CTL-GO
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM374S203CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA.
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OCR Scan
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KMM374S203CTL
200mV.
KMM374S203CTL
2Mx72
150Max
KM48S2020CT
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V
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OCR Scan
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KMM374S403CT
PC100
KMM374S403CT
4Mx72
150Max
KM48S2020CT
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA.
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OCR Scan
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KMM374S403CTL
200mV.
KMM374S403CTL
4Mx72
150Max
250Max)
KM48S2020CT
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM374S403CT PC100 SDRAM MODULE KMM374S403CT SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM374S403CT
KMM374S403CT
PC100
4Mx72
400mil
168-pin
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PDF
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870Q
Abstract: mrs 751
Text: 144pin SDRAM SOD1MM KMM466S203CT KMM466S203CT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203CT is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM466S203CT
KMM466S203CT
144pin
2Mx64
400mil
144-pin
870Q
mrs 751
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PDF
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KMM366S403CT-GL
Abstract: No abstract text available
Text: KMM366S403CT PC100 SDRAM MODULE KMM366S403CT SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM366S403CT
KMM366S403CT
PC100
4Mx64
400mil
168-pin
KMM366S403CT-GL
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM366S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs): ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.
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OCR Scan
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KMM366S403CTL
200mV.
4Mx64
KMM366S403CTL
150Max
KM48S2020CT
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PDF
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Untitled
Abstract: No abstract text available
Text: SDRAM MODULE Preliminary KMM375S203CT Revision History Revision 4 May 1998 Input leakage current (Inputs) I IL is updated. Input Capacitances are updated. Revision 5 (June 1998) -. "REGE" description is changed. REV. 5 June 1998 ELECTRONICS Preliminary KMM375S203CT
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OCR Scan
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KMM375S203CT
KMM375S203CT
2Mx72
M375S203CT
375S203CT
KMM375S203CT-G8
400mil
150Max
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PDF
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Untitled
Abstract: No abstract text available
Text: KM48S2020C CMOS SDRAM Revision History Revision ,4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.
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OCR Scan
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KM48S2020C
PC100
44-TS
0P2-400F
44-TSQP2-400R
003b2SB
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PDF
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Untitled
Abstract: No abstract text available
Text: PC100 SDRAM MODULE KMM366S403CTS KMM366S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTS is a 4M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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OCR Scan
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PC100
KMM366S403CTS
KMM366S403CTS
4Mx64
KMM366S403CTS-G8
125MHz
KMM366S403CTS-GH
100MHz
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PDF
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