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    KM44C4100C Search Results

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    KM44C4100C Price and Stock

    Samsung Semiconductor KM44C4100CK-6

    DRAM - 16MBit (4M x 4) - 5V - 24-Pin SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com KM44C4100CK-6 706
    • 1 $19.84
    • 10 $11.32
    • 100 $5.28
    • 1000 $5.28
    • 10000 $5.28
    		Buy Now

    Samsung Electro-Mechanics KM44C4100CS-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM44C4100CS-6 55 1
    • 1 $12
    • 10 $9
    • 100 $7.5
    • 1000 $7.5
    • 10000 $7.5
    		Buy Now

    Samsung Semiconductor KM44C4100CS-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM44C4100CS-6 44
    • 1 $16
    • 10 $12
    • 100 $10.8
    • 1000 $10.8
    • 10000 $10.8
    		Buy Now
    KM44C4100CS-6 62
    • 1 $21.6
    • 10 $21.6
    • 100 $16.8
    • 1000 $16.8
    • 10000 $16.8
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    KM44C4100C Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM44C4100C Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CK-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CK-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CK-L-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CKL-5 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM44C4100CK-L-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CKL-6 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM44C4100CS-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CS-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CS-L-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CSL-5 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM44C4100CS-L-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CSL-6 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF

    KM44C4100C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM44C4000C

    Abstract: KM44C4100C KM44V4000C KM44V4100C V4100C
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    Original     		PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C ba4V4100C 300mil KM44C4000C KM44C4100C KM44V4000C KM44V4100C V4100C

    KM44C4000C

    Abstract: KM44C4100C KM44V4000C KM44V4100C
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    Original     		PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C ba4V4100C 300mil KM44C4000C KM44C4100C KM44V4000C KM44V4100C

    KMM5324000CK

    Abstract: KMM5324000CKG KMM5324100CK KMM5324100CKG
    Text: KMM5324000CK/CKG KMM5324100CK/CKG DRAM MODULE KMM5324000CK/CKG & KMM5324100CK/CKG with Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53240 1 00CK is a 4Mx32bits Dynamic • Part Identification RAM


    Original     		PDF KMM5324000CK/CKG KMM5324100CK/CKG KMM5324100CK/CKG KMM53240 4Mx32bits KMM5324000CK cycles/64ms KMM5324000CKG KMM5324100CK KMM5324100CKG

    KMM5328000CK

    Abstract: KMM5328000CKG KMM5328100CK KMM5328100CKG
    Text: KMM5328000CK/CKG KMM5328100CK/CKG DRAM MODULE KMM5328000CK/CKG & KMM5328100CK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM5328000CK/CKG KMM5328100CK/CKG KMM5328100CK/CKG KMM53280 8Mx32bits 24-pin 72-pin KMM5328000CK KMM5328000CKG KMM5328100CK KMM5328100CKG

    KMM5364003CK

    Abstract: KMM5364003CKG KMM5364103CK KMM5364103CKG
    Text: KMM5364003CK/CKG KMM5364103CK/CKG DRAM MODULE 4Byte 4Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to


    Original     		PDF KMM5364003CK/CKG KMM5364103CK/CKG 4Mx36 KMM5364103CK/CKG KMM53640 KMM5364003CK KMM5364003CKG KMM5364103CK KMM5364103CKG

    Untitled

    Abstract: No abstract text available
    Text: UG9M43602KBJ N -6 Revision History Jan 09, 2001 Rev - B Aug 10 , 1998 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: (510) 668-2088 Fax: (510) 661-2788


    Original     		PDF UG9M43602KBJ 72Pin 300mil

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    DQ69

    Abstract: KMM372C400CK KMM372C400CS KMM372C410CK KMM372C410CS
    Text: KMM372C400CK/CS KMM372C410CK/CS DRAM MODULE KMM372C400CK/CS & KMM372C410CK/CS with Fast Page Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C40 1 0C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM372C400CK/CS KMM372C410CK/CS KMM372C410CK/CS 4Mx72 KMM372C40 4Mx72bits 300mil 16bits DQ69 KMM372C400CK KMM372C400CS KMM372C410CK KMM372C410CS

    KMM364C410CK

    Abstract: KMM364C410CS
    Text: KMM364C400CK/CS KMM364C410CK/CS DRAM MODULE KMM364C400CK/CS & KMM364C410CK/CS with Fast Page Mode 4Mx64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C40 1 0C is a 4Mx64bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM364C400CK/CS KMM364C410CK/CS KMM364C410CK/CS 4Mx64 KMM364C40 4Mx64bits 300mil 16bits KMM364C410CK KMM364C410CS

    MS3211

    Abstract: No abstract text available
    Text: KMM372C400CK/CS KMM372C410CK/CS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS


    Original     		PDF KMM372C400CK/CS KMM372C410CK/CS Symbol36 150Max 81Max) 08Min) 350Max 89Max) KMM372C400CK/CS KM44C4000CK, MS3211

    KMM5368003CK

    Abstract: KMM5368003CKG KMM5368103CK KMM5368103CKG R/TPC 828
    Text: KMM5368003CK/CKG KMM5368103CK/CKG DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KMM5368103CK/CKG Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to


    Original     		PDF KMM5368003CK/CKG KMM5368103CK/CKG 8Mx36 KMM5368103CK/CKG KMM53680 KMM5368003CK KMM5368003CKG KMM5368103CK KMM5368103CKG R/TPC 828

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    OCR Scan     		PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C 4V4000C,

    C4000C

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V410QC CMOS ORAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs, Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref ), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-H) are optional features of this family. All of this family have CÀS-before-


    OCR Scan     		PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V410QC 64ms/32ms C4000C

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power co


    OCR Scan     		PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C 300mil

    Untitled

    Abstract: No abstract text available
    Text: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification


    OCR Scan     		PDF KMM53280 8Mx32bits KMM5328000CK/CKG KMM53281OOCK/CKG KMM5328000CK/CKG KMM53281 5328000CK cycles/64ms KMM5328000CKG

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan     		PDF KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004

    Untitled

    Abstract: No abstract text available
    Text: KMM372C400CK/CS K M M 3 7 2 C 4 1 OCK/ CS DRAM MODULE K M M 3 7 2 C 4 0 0 C K / C S & K MM3 72C 41 OCK/CS with Fast Page Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V FEATURES G E N E R A L DESCRI PTION The Sam sung KM M 372C40 1 0C is a 4M x72bits Dynamic


    OCR Scan     		PDF KMM372C400CK/CS 4Mx72 372C40 x72bits KMM372C40 cycles/64m cycles/32m

    Untitled

    Abstract: No abstract text available
    Text: KMM5368003CK/CKG KM M 53681 0 3 C K / C K G DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KM M 53681 0 3 C K / C K G R ev is io n H is to ry Ver si on 0.1 ( Nov., 19 97 ) : Changed the mode of parity check component from EDO to FP, refer to


    OCR Scan     		PDF KMM5368003CK/CKG 8Mx36 KMM53680 8Mx36bits 300mil)

    KMM53680

    Abstract: No abstract text available
    Text: KMM5368003CK/CKG KMM5368103CK/CKG DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KMM5368103CK/CKG Revision History Version 0.1 (Nov., 1997) Changed the mode of parity check component from EDO to FP, refer to


    OCR Scan     		PDF KMM5368003CK/CKG KMM5368103CK/CKG 8Mx36 KMM5368103CK/CKG KMM53680

    k2624

    Abstract: No abstract text available
    Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#


    OCR Scan     		PDF KM41C4000D# C4000D KM41V4000D# KM41V4000W-L KM44C1000D# KM44C10OOD KM44C1003D# KM44C1004D# KM44C1004D KM44C1005D# k2624