KM44C4000C
Abstract: KM44C4100C KM44V4000C KM44V4100C V4100C
Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
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KM44C4000C,
KM44C4100C
KM44V4000C,
KM44V4100C
ba4V4100C
300mil
KM44C4000C
KM44C4100C
KM44V4000C
KM44V4100C
V4100C
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KM44C4000C
Abstract: KM44C4100C KM44V4000C KM44V4100C
Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
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KM44C4000C,
KM44C4100C
KM44V4000C,
KM44V4100C
ba4V4100C
300mil
KM44C4000C
KM44C4100C
KM44V4000C
KM44V4100C
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Untitled
Abstract: No abstract text available
Text: KMM372C804BS DRAM MODULE KMM372C804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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KMM372C804BS
KMM372C804BS
4Mx16
KMM372C804B
8Mx72bits
KMM372C804B
4Mx16bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM372C804CS DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372C804CS KMM372C804CS DRAM MODULE
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KMM372C804CS
8Mx72
4Mx16
KMM372C804CS
KMM372C804C
8Mx72bits
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KMM5324000CK
Abstract: KMM5324000CKG KMM5324100CK KMM5324100CKG
Text: KMM5324000CK/CKG KMM5324100CK/CKG DRAM MODULE KMM5324000CK/CKG & KMM5324100CK/CKG with Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53240 1 00CK is a 4Mx32bits Dynamic • Part Identification RAM
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KMM5324000CK/CKG
KMM5324100CK/CKG
KMM5324100CK/CKG
KMM53240
4Mx32bits
KMM5324000CK
cycles/64ms
KMM5324000CKG
KMM5324100CK
KMM5324100CKG
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KMM5328000CK
Abstract: KMM5328000CKG KMM5328100CK KMM5328100CKG
Text: KMM5328000CK/CKG KMM5328100CK/CKG DRAM MODULE KMM5328000CK/CKG & KMM5328100CK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits Dynamic RAM high density memory module. The Samsung
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KMM5328000CK/CKG
KMM5328100CK/CKG
KMM5328100CK/CKG
KMM53280
8Mx32bits
24-pin
72-pin
KMM5328000CK
KMM5328000CKG
KMM5328100CK
KMM5328100CKG
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KMM5364003CK
Abstract: KMM5364003CKG KMM5364103CK KMM5364103CKG
Text: KMM5364003CK/CKG KMM5364103CK/CKG DRAM MODULE 4Byte 4Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to
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KMM5364003CK/CKG
KMM5364103CK/CKG
4Mx36
KMM5364103CK/CKG
KMM53640
KMM5364003CK
KMM5364003CKG
KMM5364103CK
KMM5364103CKG
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DQ69
Abstract: KMM372C400CK KMM372C400CS KMM372C410CK KMM372C410CS
Text: KMM372C400CK/CS KMM372C410CK/CS DRAM MODULE KMM372C400CK/CS & KMM372C410CK/CS with Fast Page Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C40 1 0C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung
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KMM372C400CK/CS
KMM372C410CK/CS
KMM372C410CK/CS
4Mx72
KMM372C40
4Mx72bits
300mil
16bits
DQ69
KMM372C400CK
KMM372C400CS
KMM372C410CK
KMM372C410CS
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KMM372C804BS
Abstract: No abstract text available
Text: KMM372C804BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -1 to +7.0 -1 to +7.0
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KMM372C804BS
000DIA±
540Min)
150Max
81Max)
4Mx16
KMM372C804BS
-KM416C4100BS
KM44C4000CS
01Max
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KMM364C410CK
Abstract: KMM364C410CS
Text: KMM364C400CK/CS KMM364C410CK/CS DRAM MODULE KMM364C400CK/CS & KMM364C410CK/CS with Fast Page Mode 4Mx64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C40 1 0C is a 4Mx64bits Dynamic RAM high density memory module. The Samsung
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KMM364C400CK/CS
KMM364C410CK/CS
KMM364C410CK/CS
4Mx64
KMM364C40
4Mx64bits
300mil
16bits
KMM364C410CK
KMM364C410CS
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Untitled
Abstract: No abstract text available
Text: KMM372C404CS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372C404CS KMM372C404CS DRAM MODULE
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KMM372C404CS
4Mx72
4Mx16
KMM372C404CS
KMM372C404C
4Mx72bits
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MS3211
Abstract: No abstract text available
Text: KMM372C400CK/CS KMM372C410CK/CS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS
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KMM372C400CK/CS
KMM372C410CK/CS
Symbol36
150Max
81Max)
08Min)
350Max
89Max)
KMM372C400CK/CS
KM44C4000CK,
MS3211
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Untitled
Abstract: No abstract text available
Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
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OCR Scan
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KM44C4000C,
KM44C4100C
KM44V4000C,
KM44V4100C
4V4000C,
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C4000C
Abstract: No abstract text available
Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V410QC CMOS ORAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs, Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref ), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-H) are optional features of this family. All of this family have CÀS-before-
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KM44C4000C,
KM44C4100C
KM44V4000C,
KM44V410QC
64ms/32ms
C4000C
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4MB DRAM
Abstract: 4MX16 1MX16
Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .
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KM41C4000D/KM41V4000D.
KM44C1000D/KM44V1000D.
KM44C1003D
-KM44C1004D/KM44V1004D.
KM44C1005D
-KM48C512D/KM48V512D.
KM48C512D
4MB DRAM
4MX16
1MX16
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Untitled
Abstract: No abstract text available
Text: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification
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OCR Scan
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KMM53280
8Mx32bits
KMM5328000CK/CKG
KMM53281OOCK/CKG
KMM5328000CK/CKG
KMM53281
5328000CK
cycles/64ms
KMM5328000CKG
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Untitled
Abstract: No abstract text available
Text: KMM372C804BS DRAM M ODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 7 2 C80 4B S Revision History Version 0.0 (Sept, 1 997) Removed two AC parameters t C A C P (a c c e s s time from CAS) and tA A P (a c c e s s time from c o l. addr.) in AC CHARACTERISTICS.
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KMM372C804BS
8Mx72
4Mx16
KMM372C804B
8Mx72bits
4Mx16bits
113DIA
000DIA¡
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KM44C4105C-6
Abstract: KM44C16004
Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7
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KM41C4000D-5
KM41C4000D-6
KM41C4000D-7
KM41C4000D-L5
KM41C4000D-L6
KM41V4000D-6
KM41V4000D-L6
KM41C4000D-L7
KM41V4000D-7
KM41V4000D-L7
KM44C4105C-6
KM44C16004
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Untitled
Abstract: No abstract text available
Text: KMM372C400CK/CS K M M 3 7 2 C 4 1 OCK/ CS DRAM MODULE K M M 3 7 2 C 4 0 0 C K / C S & K MM3 72C 41 OCK/CS with Fast Page Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V FEATURES G E N E R A L DESCRI PTION The Sam sung KM M 372C40 1 0C is a 4M x72bits Dynamic
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KMM372C400CK/CS
4Mx72
372C40
x72bits
KMM372C40
cycles/64m
cycles/32m
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Untitled
Abstract: No abstract text available
Text: KMM5368003CK/CKG KM M 53681 0 3 C K / C K G DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KM M 53681 0 3 C K / C K G R ev is io n H is to ry Ver si on 0.1 ( Nov., 19 97 ) : Changed the mode of parity check component from EDO to FP, refer to
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OCR Scan
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KMM5368003CK/CKG
8Mx36
KMM53680
8Mx36bits
300mil)
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Untitled
Abstract: No abstract text available
Text: KMM372C404BS DRAM M ODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 7 2 C40 4B S Revision History Version 0.0 (Sept, 1 997) Removed two AC parameters t C A C P (a c c e s s time from CAS) and tA A P (a c c e s s time from c o l. addr.) in AC CHARACTERISTICS.
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OCR Scan
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KMM372C404BS
4Mx72
4Mx16
KMM372C404B
4Mx72bits
4Mx16bits
54Max)
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Untitled
Abstract: No abstract text available
Text: KMM372C404BS DRAM MODULE KMM372C404BS Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in
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OCR Scan
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KMM372C404BS
KMM372C404BS
4Mx16
KMM372C404B
4Mx72bits
4Mx16bits
400mil
168-pin
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KMM53680
Abstract: No abstract text available
Text: KMM5368003CK/CKG KMM5368103CK/CKG DRAM MODULE 4Byte 8Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5368003CK/CKG KMM5368103CK/CKG Revision History Version 0.1 (Nov., 1997) Changed the mode of parity check component from EDO to FP, refer to
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OCR Scan
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KMM5368003CK/CKG
KMM5368103CK/CKG
8Mx36
KMM5368103CK/CKG
KMM53680
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k2624
Abstract: No abstract text available
Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#
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KM41C4000D#
C4000D
KM41V4000D#
KM41V4000W-L
KM44C1000D#
KM44C10OOD
KM44C1003D#
KM44C1004D#
KM44C1004D
KM44C1005D#
k2624
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