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    KM44C16104B Search Results

    KM44C16104B Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM44C16104BK-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44C16104BK-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44C16104BK-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44C16104BS-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44C16104BS-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44C16104BS-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    KM44C16104B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or


    Original     		PDF KM44C16004B, KM44C16104B 16Mx4 400mil

    Untitled

    Abstract: No abstract text available
    Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or


    Original     		PDF KM44C16004B, KM44C16104B 16Mx4 400mil

    KMM53216004BK

    Abstract: KMM53216004BKG
    Text: DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		PDF KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG

    KMM53632004BK

    Abstract: KMM53632004BKG
    Text: DRAM MODULE KMM53632004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) components are applied for this module.


    Original     		PDF KMM53632004BK/BKG KMM53632004BK/BKG 16Mx4 16Mx1 KMM53632004B 32Mx36bits 16Mx4bits 16Mx1bit KMM53632004BK KMM53632004BKG

    KMM53232004BK

    Abstract: KMM53232004BKG km44c16104bk
    Text: DRAM MODULE KMM53232004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		PDF KMM53232004BK/BKG KMM53232004BK/BKG 16Mx4, KMM53232004B 32Mx32bits 16Mx4bits 72-pin KMM53232004BK KMM53232004BKG km44c16104bk

    KMM5

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53232004BV/BVG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.


    Original     		PDF KMM53232004BV/BVG KMM53232004BV/BVG 16Mx4, KMM53232004B 32Mx32bits 16Mx4bits 72-pin KMM5

    16Mx4bit

    Abstract: KMM53616004BK KMM53616004BKG
    Text: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs


    Original     		PDF KMM53616004BK/BKG KMM53616004BK/BKG 16Mx4 16Mx1, KMM53616004B 16Mx36bits 16Mx4bits 16Mx1bit 72-pin 16Mx4bit KMM53616004BK KMM53616004BKG

    KMM53216004BK

    Abstract: KMM53216004BKG
    Text: DRAM MODULE KMM53216004BK/BKG KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs


    Original     		PDF KMM53216004BK/BKG KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 72-pin KMM53216004BK KMM53216004BKG

    KMM53616004BK

    Abstract: KMM53616004BKG
    Text: DRAM MODULE KMM53616004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.


    Original     		PDF KMM53616004BK/BKG KMM53616004BK/BKG 16Mx4 16Mx1, KMM53616004B 16Mx36bits 16Mx4bits KMM53616004BK KMM53616004BKG

    KMM53232004BK

    Abstract: KMM53232004BKG
    Text: DRAM MODULE KMM53232004BK/BKG KMM53232004BK/BKG EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53232004B is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232004B consists of sixteen CMOS 16Mx4bits


    Original     		PDF KMM53232004BK/BKG KMM53232004BK/BKG 16Mx4, KMM53232004B 32Mx32bits 16Mx4bits 72-pin KMM53232004BK KMM53232004BKG

    65A8

    Abstract: KM44C16104BS KM44C16004
    Text: DRAM MODULE KMM372E160 8 0BK/BS KMM372E160(8)0BK/BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E160(8)0B consists of eighteen CMOS 16Mx4bits


    Original     		PDF KMM372E160 16Mx4, 16Mx72bits 16Mx4bits 400mil 168-pin 65A8 KM44C16104BS KM44C16004

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216004BV/BVG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this moudule.


    Original     		PDF KMM53216004BV/BVG KMM53216004BV/BVG 16Mx4, KMM53216004B 16Mx32bits 16Mx4bits 16Mx4

    Untitled

    Abstract: No abstract text available
    Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or


    OCR Scan     		PDF KM44C16004B, KM44C16104B 16Mx4 KM44C16004B KM44C16104B tASC26ns,

    44c16104

    Abstract: TC 32 DON
    Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or


    OCR Scan     		PDF KM44C16004B, KM44C16104B 16Mx4 KM44C16004B 44C16104B 400mil 44c16104 TC 32 DON

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E160 8 0BK/BS KMM364E160(8)0BK/BS EDO Mode 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E160(8)0B is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E160(8)0B consists of sixteen CMOS 16Mx4bits


    OCR Scan     		PDF KMM364E160 16Mx4, 16Mx64bits 16Mx4bits 400mii 168-pin

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan     		PDF KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004

    CACP

    Abstract: No abstract text available
    Text: DRAM MODULE KM M53232004B K/B KG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KM M53232004B K/B KG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS cacp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF M53232004B 32Mx32 16Mx4 16Mx4, KMM53232004B 32Mx32bits 16Mx4bits CACP

    Untitled

    Abstract: No abstract text available
    Text: KMM372E160 8 0BK/BS DRAM MODULE Buffered 16Mx72 DIMM (16Mx4 base) Revision 0.1 June 1998 DRAM MODULE KMM372E160(8)0BK/BS Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t CACP(access tim e from CAS) and tAAP(access tim e from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM372E160 16Mx72 16Mx4 16Mx4, 16Mx72bits

    tc 144 e

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E320 8 0BK KMM372E320(8)0BK EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E320(8)0B consists of thirty-six CMOS 16Mx4bits


    OCR Scan     		PDF KMM372E320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin tc 144 e

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53632004BK/BKG KMM53632004BK/BKG EDO Mode 32M X 36 DRAM SIMM Using 1 6Mx4 & 1 6Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632004B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632004B consists of sixteen CMOS 16Mx4bits and


    OCR Scan     		PDF KMM53632004BK/BKG KMM53632004BK/BKG KMM53632004B 32Mx36bits 16Mx4bits 16Mx1 72-pin KMM53632004BK

    64mb 72-pin simm

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53232004BK/BKG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53232004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53232004BK/BKG 32Mx32 16Mx4 KMM53232004BK/BKG 16Mx4, 16Mx4bits KMM53232004BK cycles/64ms 64mb 72-pin simm

    Untitled

    Abstract: No abstract text available
    Text: DRAM M ODULE KMM372E160 8 0BK/BS Buffered 16Mx72 DIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM372E160(8)0BK/BS Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF KMM372E160 16Mx72 16Mx4 KMM372E1 372E1 16Mx4, 16Mx72bits

    k2624

    Abstract: No abstract text available
    Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#


    OCR Scan     		PDF KM41C4000D# C4000D KM41V4000D# KM41V4000W-L KM44C1000D# KM44C10OOD KM44C1003D# KM44C1004D# KM44C1004D KM44C1005D# k2624