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    KMM5 Price and Stock

    Vishay Intertechnologies CWR06KC106KM/M5

    CAP 10UF 25VDC 10% 6.73 X 2.79 X 2.79MM SMD 1% - Bulk (Alt: CWR06KC106KM/M5)
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    Avnet Americas CWR06KC106KM/M5 Bulk 14 Weeks 60
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    United Chemi-Con Inc EKMM500VSN103MA40S

    Aluminum Electrolytic Capacitors - Snap In 10000uF 50 Volt
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    Mouser Electronics EKMM500VSN103MA40S
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    Samsung Semiconductor KMM59256BN-8

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    Bristol Electronics KMM59256BN-8 71
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    Samsung Semiconductor KMM5321000BV-7

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    Bristol Electronics KMM5321000BV-7 7
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    Samsung Semiconductor KMM5322104AU-6M

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    Bristol Electronics KMM5322104AU-6M 5
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    KMM5 Datasheets (263)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KMM5.1 Kexin Zener Diodes Original PDF
    KMM51 Kexin Zener Diodes Original PDF
    KMM511024-12 Samsung Electronics 1 Meg x 1 DRAM and SIMM Memory Modules Scan PDF
    KMM511024-15 Samsung Electronics 1 Meg x 1 DRAM and SIMM Memory Modules Scan PDF
    KMM511025-12 Samsung Electronics 1 Meg x 1 DRAM and SIMM Memory Modules Scan PDF
    KMM511025-15 Samsung Electronics 1 Meg x 1 DRAM and SIMM Memory Modules Scan PDF
    KMM5321000BV-6 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BV-7 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BV-8 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-6 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-7 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-8 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321200AW-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AW-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AWG-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200AWG-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BW-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BW-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BWG-6 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    KMM5321200BWG-7 Samsung Electronics 1M x 32 DRAM SIMM, 1K Refresh, 5V Scan PDF
    ...

    KMM5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368005CSW/CSWG DRAM MODULE


    Original     		PDF KMM5368005CSW/CSWG 8Mx36 4Mx16 KMM5368005CSW/CSWG KMM5368005C 8Mx36bits

    s - ck5t

    Abstract: CA52
    Text: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		PDF KMM5321200BW/B KMM5321200BW/BWG 1Mx32 1Mx16 KMM5321200BW 42-pin 72-pin s - ck5t CA52

    KM416C1200AJ

    Abstract: ra57
    Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		PDF M5321200AW/AWG KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin KMM5321200AW KM416C1200AJ ra57

    KMM5321000BV-7

    Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
    Text: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns


    OCR Scan     		PDF KMM5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 110ns 130ns 150ns KMM5321000BV-8 cycles/16ms KMM5321000BV 1Mx4 dram simm caso Samsung Capacitor DO30

    memory samsung

    Abstract: No abstract text available
    Text: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM


    OCR Scan     		PDF KMM411024/KMM511024 KMM41102 5/KMM511025 KMM411024, KMM411025, KMM511024 KMM511025, KM41256/7 18-pin KMM411024 memory samsung

    Untitled

    Abstract: No abstract text available
    Text: b4E D S A M S UN G E L E C T R O N I C S INC • 7^4142 ü o m aia 3QQ ■ S f 1 6 K DRAM MODULES KMM5404000/G 4MK40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAC ÍRC 60ns 15ns 110ns KMM5404000-7 70ns 20ns 130ns KMM5404000-8


    OCR Scan     		PDF KMM5404000/G 4MK40 110ns KMM5404000-7 130ns KMM5404000-8 150ns KMM5404000-6 KMM5404000

    KMM581000An-8

    Abstract: No abstract text available
    Text: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package


    OCR Scan     		PDF KMM581000AN 581000AN 81000A 44C1000AJ 20-pin 30-pin 130ns 581000AN- 150ns KMM581000An-8

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 KM536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM536512W-6 60ns 15ns 110ns KMM536512W-7 70ns 20ns


    OCR Scan     		PDF KM536512W/WG 512KX36 KMM536512W-6 110ns 130ns KMM536512W-8 150ns KMM536512W KMM536512WG:

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit


    OCR Scan     		PDF KMM5361000A/AG Q014Sh4 361000A bitsX36 20-pin 72-pin 361000A- 130ns

    tb41

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5362203AW/AWG KMM5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW KMM5362203AW cycles/16 5362203AW tb41

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E D • T T b H l H S 0 0 1 5 3 1 0 13T I SPIGK KMM5368000H/HG DRAM MODULES 8Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5368000H is a 8 M bits x 36 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5368000H/HG 8Mx36 KMM5368000H 24-pin 72-pin 110ns KMM5368000H-7 130ns KMM5368000H-8

    KMM5361000/A

    Abstract: No abstract text available
    Text: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 KMM5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5361000A1 consist of eight CMOS 1M x4 bit


    OCR Scan     		PDF KMM5361OOOA1/A1G KMM5361000A1 20-pin 72-pin KMM5361000A1-7 130ns M5361OOOA1 150ns KMM5361000/A

    41C16000

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF 16000/T 16Mx8 KMM5816000/T 5816000/T 41C16000/T 24-pin 30-pin KMM5816000-6 110ns KMM5816000-7 41C16000

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits

    KMM581000N8

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC M2E D H KMM581000N 7=^4142 0Q10434 b DRAM MODULES 1M x8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N Is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs


    OCR Scan     		PDF KMM581000N 0Q10434 KMM581000N KM44C1000J-1M 20-pin 30-pin KMM581000N-8 150ns KMM581000N-10 KMM581000N8

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .


    OCR Scan     		PDF KMM5362205C2W/C2WG 2Mx36 KMM5362205CW/CWG KMM5362205C2W/C2WG 1Mx16 KMM5362205C2W 2Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E 3 WÊ 7 ^ b 4 m 2 DGlSeflG b7E • SMGK DRAM MODULES KMM5364000H/HG 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: KMM5364000H-6 • • • • • • • tflA C tcA C Í rc 60ns 15ns


    OCR Scan     		PDF KMM5364000H/HG KMM5364000H-6 M5364000H-7 130ns KMM5364000H-8 KMM5364000H 24-pin 72-pin 150ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF 7Tfcj4142 KMM581000AN 581000AN 81000A KM44C1OOOAJ 20-pin 30-pin 581000AN- 130ns

    KMM5322000BV

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 KMM5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7


    OCR Scan     		PDF KMM5322000BV/BVG M5322000BV-6 M5322000B KMM5322000BV 20-pin 72-pin 130ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5328004BK/BKG KMM5328104BK/BKG KMM5328104BK/BKG 8Mx32 KMM53280 KMM5328004BK cycles/64ms KMM5328004BKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM584000A 84000A 41C4000AJ 20-pin 30-pin 130ns 84000A- 150ns

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • C ha n g ed m odule P C B from 6 -L a ye r to 4-Layer. • C ha n g ed M odule Part No. from K M M 5 3 6 2 2 0 3 C W /C W G to K M M 5 3 6 2 2 0 3 C 2 W /C 2 W G caused by P C B revision .


    OCR Scan     		PDF KMM5362203C2W/C2WG 2Mx36 1MX16 KMM5362203C2W/C2WG

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D B 7^4142 KMM5910Q0B GülQ42b 7 QSMÛK DRAM MODULES 1 M X 9 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: T he Samsung K M M 5 9 1 0 0 0 B is a 1 M b it X 9 Dynamic RAM high de nsity m em ory module. - The Samsung


    OCR Scan     		PDF KMM5910Q0B lQ42b KM41C1OOOBJ 20-pin 30-pin 591000B- 130ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: b?E D S A M S UN G E L E C T R O N I C S INC • TThMlME 00132=12 BIM ■ S M G K KMM5328000V/VG/VP DRAM MODULES 8Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • tcAC tRC KMM5328000V-6 60ns


    OCR Scan     		PDF KMM5328000V/VG/VP 8Mx32 KMM5328000V-6 110ns 130ns KMM5328000V-8 KMM5328000V-7 KMM5328000V bitsx36