Untitled
Abstract: No abstract text available
Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or
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KM44C16004B,
KM44C16104B
16Mx4
400mil
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Untitled
Abstract: No abstract text available
Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or
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KM44C16004B,
KM44C16104B
16Mx4
400mil
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65A8
Abstract: KM44C16104BS KM44C16004
Text: DRAM MODULE KMM372E160 8 0BK/BS KMM372E160(8)0BK/BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E160(8)0B consists of eighteen CMOS 16Mx4bits
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KMM372E160
16Mx4,
16Mx72bits
16Mx4bits
400mil
168-pin
65A8
KM44C16104BS
KM44C16004
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372E320 8 0BK KMM372E320(8)0BK EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E320(8)0B consists of thirty-six CMOS 16Mx4bits
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KMM372E320
16Mx4,
32Mx72bits
16Mx4bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or
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KM44C16004B,
KM44C16104B
16Mx4
KM44C16004B
KM44C16104B
tASC26ns,
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44c16104
Abstract: TC 32 DON
Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or
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KM44C16004B,
KM44C16104B
16Mx4
KM44C16004B
44C16104B
400mil
44c16104
TC 32 DON
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364E160 8 0BK/BS KMM364E160(8)0BK/BS EDO Mode 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E160(8)0B is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E160(8)0B consists of sixteen CMOS 16Mx4bits
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KMM364E160
16Mx4,
16Mx64bits
16Mx4bits
400mii
168-pin
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4MB DRAM
Abstract: 4MX16 1MX16
Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .
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KM41C4000D/KM41V4000D.
KM44C1000D/KM44V1000D.
KM44C1003D
-KM44C1004D/KM44V1004D.
KM44C1005D
-KM48C512D/KM48V512D.
KM48C512D
4MB DRAM
4MX16
1MX16
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KM44C4105C-6
Abstract: KM44C16004
Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7
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KM41C4000D-5
KM41C4000D-6
KM41C4000D-7
KM41C4000D-L5
KM41C4000D-L6
KM41V4000D-6
KM41V4000D-L6
KM41C4000D-L7
KM41V4000D-7
KM41V4000D-L7
KM44C4105C-6
KM44C16004
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Untitled
Abstract: No abstract text available
Text: KMM372E160 8 0BK/BS DRAM MODULE Buffered 16Mx72 DIMM (16Mx4 base) Revision 0.1 June 1998 DRAM MODULE KMM372E160(8)0BK/BS Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t CACP(access tim e from CAS) and tAAP(access tim e from col. addr.) in A C CHARACTERISTICS.
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KMM372E160
16Mx72
16Mx4
16Mx4,
16Mx72bits
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tc 144 e
Abstract: No abstract text available
Text: DRAM MODULE KMM372E320 8 0BK KMM372E320(8)0BK EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E320(8)0B consists of thirty-six CMOS 16Mx4bits
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OCR Scan
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PDF
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KMM372E320
16Mx4,
32Mx72bits
16Mx4bits
400mil
168-pin
tc 144 e
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Untitled
Abstract: No abstract text available
Text: DRAM M ODULE KMM372E160 8 0BK/BS Buffered 16Mx72 DIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM372E160(8)0BK/BS Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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KMM372E160
16Mx72
16Mx4
KMM372E1
372E1
16Mx4,
16Mx72bits
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k2624
Abstract: No abstract text available
Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#
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KM41C4000D#
C4000D
KM41V4000D#
KM41V4000W-L
KM44C1000D#
KM44C10OOD
KM44C1003D#
KM44C1004D#
KM44C1004D
KM44C1005D#
k2624
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