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    KMM53616004BKG Search Results

    KMM53616004BKG Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KMM53616004BKG-5 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    KMM53616004BKG-6 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF

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    16Mx4bit

    Abstract: KMM53616004BK KMM53616004BKG
    Text: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs


    Original     		PDF KMM53616004BK/BKG KMM53616004BK/BKG 16Mx4 16Mx1, KMM53616004B 16Mx36bits 16Mx4bits 16Mx1bit 72-pin 16Mx4bit KMM53616004BK KMM53616004BKG

    KMM53616004BK

    Abstract: KMM53616004BKG
    Text: DRAM MODULE KMM53616004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.


    Original     		PDF KMM53616004BK/BKG KMM53616004BK/BKG 16Mx4 16Mx1, KMM53616004B 16Mx36bits 16Mx4bits KMM53616004BK KMM53616004BKG