Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372E160 8 0CK/CS Buffered 16Mx72 DIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372E160(8)0CK/CS DRAM MODULE KMM372E160(8)0CK/CS
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KMM372E160
16Mx72
16Mx4
16Mx4,
16Mx72bits
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65A8
Abstract: KM44C16104BS KM44C16004
Text: DRAM MODULE KMM372E160 8 0BK/BS KMM372E160(8)0BK/BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E160(8)0B consists of eighteen CMOS 16Mx4bits
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KMM372E160
16Mx4,
16Mx72bits
16Mx4bits
400mil
168-pin
65A8
KM44C16104BS
KM44C16004
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Untitled
Abstract: No abstract text available
Text: KMM372E160 8 0BK/BS DRAM MODULE Buffered 16Mx72 DIMM (16Mx4 base) Revision 0.1 June 1998 DRAM MODULE KMM372E160(8)0BK/BS Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t CACP(access tim e from CAS) and tAAP(access tim e from col. addr.) in A C CHARACTERISTICS.
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OCR Scan
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PDF
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KMM372E160
16Mx72
16Mx4
16Mx4,
16Mx72bits
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Untitled
Abstract: No abstract text available
Text: DRAM M ODULE KMM372E160 8 0BK/BS Buffered 16Mx72 DIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM372E160(8)0BK/BS Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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OCR Scan
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KMM372E160
16Mx72
16Mx4
KMM372E1
372E1
16Mx4,
16Mx72bits
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