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    KM4216C256 Search Results

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    KM4216C256 Price and Stock

    Samsung Semiconductor KM4216C256-60

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM4216C256-60 60
    • 1 $9
    • 10 $9
    • 100 $5.55
    • 1000 $5.55
    • 10000 $5.55
    Buy Now

    Samsung Semiconductor KM4216C256G-60

    IC,VRAM,EDO,256KX16,CMOS,SOP,64PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM4216C256G-60 50
    • 1 $12
    • 10 $6
    • 100 $5.2
    • 1000 $5.2
    • 10000 $5.2
    Buy Now

    KM4216C256 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM4216C256 Samsung Electronics 1W V(in/out/cc): -1 to +7V 50mA 256 x 16 bit CMOS video RAM Scan PDF
    KM4216C256-6 Samsung Electronics 256K x 16-Bit CMOS Video RAM Scan PDF
    KM4216C256-7 Samsung Electronics 256K x 16-Bit CMOS Video RAM Scan PDF
    KM4216C256-8 Samsung Electronics 256K x 16-Bit CMOS Video RAM Scan PDF

    KM4216C256 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM4216C256

    Abstract: No abstract text available
    Text: KM4216C256 CMOS VIDEO RAM 256K x 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port has


    Original
    KM4216C256 110ns 130ns 150ns KM4216C256 PDF

    KM4216C258

    Abstract: No abstract text available
    Text: KM4216C258 CMOS VIDEO RAM 256K x 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port has


    Original
    KM4216C258 104ns 130ns KM4216C258 PDF

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original
    MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT PDF

    km4132g512

    Abstract: SGRAM RC2H KM4232W
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE . 9 II. DUAL PORT RAM DATA SHEETS 1.KM4216C256 . VRAM EDO, 2WE , 256Kx16 . 13 2.KM4216C258 . VRAM(EDO, 2CAS), 256Kx16 .54


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    KM4216C256 256Kx16 KM4216C258 KM4232W259A 256Kx32 KM4132G271B KM4132G512 512Kx32 km4132g512 SGRAM RC2H KM4232W PDF

    v256t

    Abstract: No abstract text available
    Text: PRELIMINARY 'f. KM4216C256/L/F, KM4216V256/L/FX CMOS VIDEO RAM 256K x 16 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K X 16 bits RAM port 512 x 16 bits SAM port • Performance range: The Samsung KM4216C/V256 is a CMOS 2 5 6 K x 16 bit


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    KM4216C256/L/F, KM4216V256/L/FX 110ns KM4216C/V256 SQ0-SQ15 KM4216V256/L/F 20MAX v256t PDF

    MN104

    Abstract: 256x16* STATIC RAM
    Text: KM4216C256 CMOS VIDEO RAM 256K x 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port has


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    KM4216C256 256Kx 512x16 110ns 150ns MN104 256x16* STATIC RAM PDF

    KM4232W259

    Abstract: No abstract text available
    Text: GRAPHIC MEMORY PRODUCT GUIDE I. GRAPHIC BUFFER MEMORY PRODUCT GUIDE i N iä ä * Power Supply 1 o Product Part Number Speed Features V Package Remark 256K X 16 5V±10% KM4216C256# KM4216C258# 60/70/80 50/60/70 F/F EDO, 2W E F/F(EDO, 2CAS) 64SSO P Now Now


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    KM4216C256# KM4216C258# KM4232W259A# KM4132G271B# KM4132G512# KM48RC2# KM49RC2# KM416S1020C 16Mbit KM4232W259 PDF

    KM4216C258

    Abstract: KM4232W KM4232W259
    Text: MEMORY ICs FUNCTION GUIDE 2. GRAPHIC BUFFER MEMORY PRODUCT GUIDE Part Number Density Orgnization Power Supply Speed ns Features 4Mbit 256K x 16 5V±10% KM4216C255 KM4216C256 KM4216C258 60/70/80 60/70/80 60/70/80 F/F (2WE) F/F (EDO, 2WE) F/F (EDO, 2CAS) 64 SSOP


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    KM4216C255 KM4216C256 KM4216C258 KM4216V255 KM4216V256 KM4216V258 KM4232W259 KM4232W259A KM4132G271 KM4132G271A KM4232W PDF

    "Video RAM"

    Abstract: KM4216V256 KM4216C256
    Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM a rray consists of 512 bit rows of 8192 bits. * Dual port A rchitecture 256K x 16 bits RAM port It operates like a conventional 256K x 16 C M O S DRAM. The RAM port has a write per bit m ask capability.


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    4216C/V256 110ns 130ns 150ns KM4216C256 120mA 110mA 100mA KM4216V256 "Video RAM" PDF

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


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    64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


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    KM4216C/V256 PDF

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 KM41C4000C-7 KM41C4000C-8 KM41C4000C-5


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    KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000 PDF

    8x32 sram

    Abstract: No abstract text available
    Text: CMOS VIDEO RAM KM4216C258 256Kx 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port has


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    KM4216C258 256Kx 512x16 104ns 130ns 8x32 sram PDF

    AN4256

    Abstract: "Video RAM" KM4216C256 KM4216V256 512x512x16
    Text: CMOS VIDEO RAM KM4216C/V256 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


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    KM4216C/V256 256KX 110ns 130ns 150ns KM4216C256 120mA 110mA 100mA KM4216V256 AN4256 "Video RAM" 512x512x16 PDF

    KM4216C256

    Abstract: KM4216V256 SQ15
    Text: KM4216C/V256 CMOS VIDEO RAM 2 5 6 K x 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. ,u Dual port Architecture 256K x 16 bits RAM port 512 x 16 bits SAM port The RAM port has a write per bit mask capability.


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    KM4216C/V256 256Kx 110ns 130ns 150ns KM4216C256 120mA 110mA 100mA KM4216V256 SQ15 PDF

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


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    KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v PDF

    KM4216C258

    Abstract: No abstract text available
    Text: KM4216C/V258 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


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    KM4216C 512x16 110ns 130ns 150ns KM4216C258 120mA 110mA 100mA KM4216V258 PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


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    KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF

    256x16* STATIC RAM

    Abstract: 10 35L W9 10 35L W1 10 35L W8 sc 4145 KM4216C256 KM4216V256 74143 10 35L a8 capacitor 0051142
    Text: CMOS VIDEO RAM KM4216C/V256 2 56K X 16 B it CMOS Video HAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


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    KM4216C/V256 110ns 130ns 150ns KM4216C256 120mA 110mA 100mA KM4216V256 256x16* STATIC RAM 10 35L W9 10 35L W1 10 35L W8 sc 4145 74143 10 35L a8 capacitor 0051142 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS VIDEO RAM KM4216C/V256 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


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    KM4216C/V256 tR6C/V256 D0277Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


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    KM4216C/V256 512x16 110ns 130ns 150ns KM4216C256 120mA 110mA 100mA 77BT/WEU PDF

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 MB81257 — S. Column KM41C258 TC51258


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    KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference PDF

    64Kx8 CMOS RAM

    Abstract: KM428C257 zip 40pin 52PLCC
    Text: FUNCTION GUIDE MEMORY ICs Synchronous SRAM Power Dissipation Den. 1M 288K 512K Part Name KM741006 KM791001 256K 128K KM 79C86 KM 79C40 32K 32K KM 718B513 KM718BV513 KM 718B514 1M Speed ns 36 SOJ 32 SOJ Now NoW X 9 CMOS CMOS 190 190 44 PLCC 9 14/19/24 14/19/24


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    KM741006 KM791001 79C86 79C40 718B513 KM718BV513 718B514 KM718BV514 718B520 KM718BV520 64Kx8 CMOS RAM KM428C257 zip 40pin 52PLCC PDF