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    Samsung Semiconductor KM4132G271AQ-8

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    Quest Components KM4132G271AQ-8 155
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    Samsung Semiconductor KM4132G271AQ-10

    4132G271AQ-10
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    KM4132G271A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM4132G271A Samsung Electronics 128K x 32-Bit x 2 Banks Synchronous Graphic RAM Original PDF
    KM4132G271A-10 Samsung Electronics 128K x 32-Bit x 2 Banks Synchronous Graphic RAM Original PDF
    KM4132G271A-12 Samsung Electronics 128K x 32-Bit x 2 Banks Synchronous Graphic RAM Original PDF
    KM4132G271A-8 Samsung Electronics 128K x 32-Bit x 2 Banks Synchronous Graphic RAM Original PDF
    KM4132G271AQ-10 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 10ns Original PDF
    KM4132G271AQ-12 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 12ns Original PDF
    KM4132G271AQ-8 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 8ns Original PDF
    KM4132G271AQR-10 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 10ns Original PDF
    KM4132G271AQR-12 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 12ns Original PDF
    KM4132G271AQR-8 Samsung Electronics 128K x 32-Bit x 2 banks synchronous graphic RAM, 3.3V, 8ns Original PDF

    KM4132G271A Datasheets Context Search

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    DQ 51

    Abstract: KM4132G271A KM4132G271A-10 KM4132G271A-12 KM4132G271A-8
    Text: KM4132G271A CMOS SGRAM 128K x 32Bit x 2 Banks Synchronous Graphic RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION The KM4132G271A is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits,


    Original     		PDF KM4132G271A 32Bit KM4132G271A DQ 51 KM4132G271A-10 KM4132G271A-12 KM4132G271A-8

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    KMM966G512AQN-G0

    Abstract: 30H22 KMM966G512AQN-G2
    Text: KMM966G512AQN SGRAM MODULE 4MB SGRAM MODULE 512Kx64 SO DIM M based on 256Kx32 SGRAM Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.0 December 1997 Rev.2.0 (Dec. 1997) BEHMB KMM966G512AQN SGRAM MODULE Revision History Revision 2.0 (December 3,1997)


    OCR Scan     		PDF KMM966G512AQN 512Kx64 256Kx32 64-bit 144-pin 256Kx32, 100pin KM4132G271AQ KMM966G512AQN-G0 30H22 KMM966G512AQN-G2

    KMM966G256AQN

    Abstract: No abstract text available
    Text: KMM966G256AQN SGRAM MODULE 2MB SGRAM MODULE 256Kx64 SODIMM based on 256Kx32 SGRAM Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.0 December 1997 Rev.2.0 (Dec. 1997) ELECTRONO KMM966G256AQN SGRAM MODULE Revision History Revision 2.0 (December 3,1997)


    OCR Scan     		PDF KMM966G256AQN 256Kx64 256Kx32 64-bit 144-pin 256Kx32, 100pin KM4132G271AQ KMM966G256AQN

    KM4216C258

    Abstract: KM4232W KM4232W259
    Text: MEMORY ICs FUNCTION GUIDE 2. GRAPHIC BUFFER MEMORY PRODUCT GUIDE Part Number Density Orgnization Power Supply Speed ns Features 4Mbit 256K x 16 5V±10% KM4216C255 KM4216C256 KM4216C258 60/70/80 60/70/80 60/70/80 F/F (2WE) F/F (EDO, 2WE) F/F (EDO, 2CAS) 64 SSOP


    OCR Scan     		PDF KM4216C255 KM4216C256 KM4216C258 KM4216V255 KM4216V256 KM4216V258 KM4232W259 KM4232W259A KM4132G271 KM4132G271A KM4232W