MSM5416283
Abstract: FJDS5416283
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FJDS5416283-05
MSM5416283
144-Word
16-Bit
MSM5416283262
16RAM
16SAMCMOS
RAM256K
SAM512
5128ms
MSM5416283
FJDS5416283
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Untitled
Abstract: No abstract text available
Text: HY63V16400A 256Kx16bit CMOS FAST SRAM Preliminary DESCRIPTION FEATURES The HY63V16400A is a 4,194,304-bit high-speed SRAM organized as 262,144 words by 16 bits. The HY63V16400A uses sixteen common input and output lines and has an output enable pin which operates faster than address access time at
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HY63V16400A
256Kx16bit
HY63V16400A
304-bit
44pin
400mil
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Untitled
Abstract: No abstract text available
Text: $6/&. 9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 35/45/60 ns RAS access time - 17/20/25 ns column address access time - 7/10/10 ns CAS access time • Low power consumption - Active: 280 mW max (AS4LC256K16E0-35)
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AS4LC256K16E0-35)
40-pin
40/44-pin
I/O15
AS4LC256K16E0-35JC
AS4LC256K16E0-35TC
AS4LC256K16E0-45JC
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WM1-DIN
Abstract: MSM54V1627360
Text: J2L0025-17-Y1 作成：1998年 1月 MSM54V16273 l 前回作成：1997年 9月 ¡ 電子デバイス MSM54V16273 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー
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J2L002517Y1
MSM54V16273
144Word
16Bit
MSM54V16273
MSM54V16273262
16RAM
16SAMCMOS
RAM256K
SAM512
WM1-DIN
MSM54V1627360
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Untitled
Abstract: No abstract text available
Text: J2L0021-17-Y1 作成：1998年 1月 MSM5416273 l 前回作成：1997年 9月 ¡ 電子デバイス MSM5416273 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー
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J2L002117Y1
MSM5416273
144Word
16Bit
MSM5416273
MSM5416273262
16RAM
16SAMCMOS
RAM256K
SAM512
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sub-micro CMOS technology
Abstract: No abstract text available
Text: VG26 V S4260D 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicro CMOS technology and advanced CMOS circuit design technologies. Fast Page Mode allows 512 random
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S4260D
144-word
16-bit
40pin,
400mil
VG26S4260D)
VG26VS4260D)
sub-micro CMOS technology
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VG26426
Abstract: No abstract text available
Text: VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in
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40-pin
VG264260CJ
144-word
25/28/30/35/40ns
1G5-0109
VG26426
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MSM54V16283
Abstract: No abstract text available
Text: FJDS54V16283-05 作成：2000年 2月 ¡ 電子デバイス 前回作成：1998年 1月 MSM54V16283 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー
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FJDS54V16283-05
MSM54V16283
144-Word
16-Bit
MSM54V16283262
16RAM
16SAMCMOS
RAM256K
SAM512
5128ms
MSM54V16283
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FJDS5416283
Abstract: MSM5416283
Text: FJDS5416283-05 作成：2000年 2月 ¡ 電子デバイス 前回作成：1998年 1月 MSM5416283 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー
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FJDS5416283-05
MSM5416283
144-Word
16-Bit
MSM5416283262
16RAM
16SAMCMOS
RAM256K
SAM512
5128ms
FJDS5416283
MSM5416283
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AS4LC256K16EO
Abstract: AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28
Text: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time
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AS4LC256K16EO
AS4LC256K16EO-35)
AS4LC256K16EO35)
40-pin
40/44-pin
I/O15
40-pin
AS4LC256K16E0-35JC
AS4LC256K16E0-45JC
AS4LC256K16EO
AS4LC256K16EO-35
AS4LC256K16E0-35JC
RAS-28
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AS4C256K16FO
Abstract: AS4C256K16FO-60
Text: AS4C256K16FO 5V 256K X 16 CMOS DRAM Fast Page Mode Features • Organization: 262,144 words x 16 bits • High speed - 25/30/35/50 ns RAS access time - 12/16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption
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AS4C256K16FO
ASAS4C256K16FO-50)
AS4C256K16FO-50
40-pin
40/44-pin
AS4C256K16F0-25JC
AS4C256K16F0-30JC
AS4C256K16F0-35JC
AS4C256K16FO-50JC
AS4C256K16FO
AS4C256K16FO-60
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lcd ibm pinout
Abstract: 24CO2 30 Pinout panel lcd MD14 SPC8104 256K 4bit DRAM 256KDRAM
Text: PF765-02 SPC8104F Low Voltage VGA LCD Controller • DESCRIPTION The SPC8104 is a low power, mixed voltage video controller based on VGA architecture and optimized for driving a 640x480 LCD panel display. VGA standard mode functionality is supported using standard IBM VGA
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PF765-02
SPC8104F
SPC8104
lcd ibm pinout
24CO2
30 Pinout panel lcd
MD14
256K 4bit DRAM
256KDRAM
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UPD424260LE-70
Abstract: 512X512X16
Text: UPD424260LE-70 1/2 IL08 * C-MOS 4M (262,144x16) BIT DYNAMIC RAM - TOP VIEW - 1 V DD (+5V) GND 40 I/O1 IN/OUT 2 39 I/O16 IN/OUT I/O2 IN/OUT 3 38 I/O15 IN/OUT I/O3 IN/OUT 4 37 I/O14 IN/OUT I/O4 IN/OUT 5 36 I/O13 IN/OUT 6 V DD (+5V) GND 35 I/O5 IN/OUT 7
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UPD424260LE-70
144x16)
I/O16
I/O15
I/O14
I/O13
I/O11
I/O10
I/O12
I/O1-16
512X512X16
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Untitled
Abstract: No abstract text available
Text: IB M 0 1 5 1 6 0 IB M 0 1 5 1 6 1 256K X 16 DRAM Features • 256K X • 66MHz EDO performance 16 DRAM • Non-Persistent WPBM mode • Performance: Parameter -40 -50 -60 tRP RE Precharge 20ns 25ns 30ns tCAC Access Time from CË 12ns 14ns 15ns Ua Column Address Access
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66MHz
110ns
SOJ-40
27H6280
SA14-4243-00
IBM015160
IBM015161
SA14-4243-01
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SP126
Abstract: lg lcd tv panel circuit diagram free SPC8106F0B SPC8108FOC 4X12 lcd SP-1108 sp1 1r4 FL400 xe p001 XCSL
Text: S-MOS S Y S T E M S A Seiko Epson Affiliate SPC8106 LCD/CRT VGA CONTROLLER Data Sheet Copyright 1997 S-MOS Systems Inc. All rights reserved. VDC This document, and any text derived, extracted or transmitted from it, is the sole property of S-MOS Systems Inc. and may not be used, copied,
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SPC8106
SP1-127
X12-SP-001-07
Q0G57b3
SP126
lg lcd tv panel circuit diagram free
SPC8106F0B
SPC8108FOC
4X12 lcd
SP-1108
sp1 1r4
FL400
xe p001
XCSL
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Untitled
Abstract: No abstract text available
Text: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and
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MSM5416273
MSM5416273
144-word
16-bit
512-words
16-bits
2424D
b7E4240
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Untitled
Abstract: No abstract text available
Text: EPSON PF765-02 _ SPC8104F Low Voltage VGA LCD Controller • DESCRIPTION The SPC8104 is a low power, mixed voltage video controller based on VGA architecture and optimized for driving a 640x480 LCD panel display. VGA standard mode functionality is supported using standard IBM VGA
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PF765-02
SPC8104F
SPC8104
640x480
64x6bit
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Untitled
Abstract: No abstract text available
Text: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416283
144-Word
16-Bit
MSM5416283
16-bit
512-word
2424D
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 2 1 6 2 5 7 S e r ie s 256K X 16-bit Video RAM with 2WE Introduction O verview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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16-bit
16bits
1VC02-00-MAY95
HY5216257
525mil
64pin
1VC02-00-MAY9S
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256x16* STATIC RAM
Abstract: No abstract text available
Text: O K I Semiconductor MSM54V16283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM54V16283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asy nchronously.
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MSM54
V16283
144-Word
16-Bit
MSM54V16283
512-word
V16283
256x16* STATIC RAM
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM54V16273 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM54V16273 is a 4-M bit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM54
V16273
144-Word
16-Bit
MSM54V16273
512-word
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8I04
Abstract: No abstract text available
Text: S-MOS S Y S T E M S A Seiko E pson A ffilia te SPC8104F0A VGA LCD Controller Hardware Functional Specification Drawing Office No. X15-SP-001-08 C o p y r ig h t 1994, 1996 S -M O S S y s te m s Inc. A ll rig h ts re se rve d . T h is do c u m e n t, an d a n y te x t d e rived, ex tra c te d or tra n sm itte d from it, is the so le p ro p e rty o f S -M O S S y s te m s Inc. and m a y not be used, copied,
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SPC8104F0A
X15-SP-001-08
8104F
15-SP
8I04F
-00I-08
8I04
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TC51V4265
Abstract: d2539
Text: TOSHIBA TC51V4265DFIS60/70 PRELIMINARY 262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4265DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4265DFTS uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
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TC51V4265DFIS60/70
TheTC51V4265DFTS
TC51V4265DFTS
TC51V4265DFTS-60/70
DR04061194
TC51V4265
d2539
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D482445LGW-A70
Abstract: cwi 1011
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT D escrip tio n The /iPD482444 and ^PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock
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PD482444,
256K-WORD
16-BIT
/iPD482444
PD482445
iPD482445
008t8oo2
020tg
bM27525
00b3flD
D482445LGW-A70
cwi 1011
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