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    KM416S1020C Search Results

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    KM416S1020C Price and Stock

    Samsung Semiconductor KM416S1020CT-610

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    Bristol Electronics KM416S1020CT-610 90
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    Samsung Semiconductor KM416S1020CTG10

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    Bristol Electronics KM416S1020CTG10 331
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    ComSIT USA KM416S1020CTG10 990
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    Samsung Semiconductor KM416S1020CT-G7

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    Bristol Electronics KM416S1020CT-G7 602
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    Quest Components KM416S1020CT-G7 114
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    KM416S1020CT-G7 481
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    Samsung Semiconductor KM416S1020CT-G10

    SDRAM, 1M x 16, 50 Pin, Plastic, TSOP
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    Quest Components KM416S1020CT-G10 798
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    SEC KM416S1020CT-G10

    SDRAM, 1M x 16, 50 Pin, Plastic, TSOP
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    Quest Components KM416S1020CT-G10 8
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    KM416S1020C Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM416S1020CT Samsung Electronics KM416S1020CT 512K x 16-Bit x 2 Banks Synchronous DRAM Organization = 1Mx16 Vdd/Vddq(V) = 3.3 Speed(ns) = 60,70,80,10 Refresh = 4K/64ms Package = 50TSOP2 Interface = LVTTL Production Status = Eol Comments = 2B Original PDF
    KM416S1020CT-G10 Samsung Electronics KM416S1020CT 512K x 16-Bit x 2 Banks Synchronous DRAM Organization = 1Mx16 Vdd/Vddq(V) = 3.3 Speed(ns) = 60,70,80,10 Refresh = 4K/64ms Package = 50TSOP2 Interface = LVTTL Production Status = Eol Comments = 2B Original PDF
    KM416S1020CT-G8 Samsung Electronics KM416S1020CT 512K x 16-Bit x 2 Banks Synchronous DRAM Organization = 1Mx16 Vdd/Vddq(V) = 3.3 Speed(ns) = 60,70,80,10 Refresh = 4K/64ms Package = 50TSOP2 Interface = LVTTL Production Status = Eol Comments = 2B Original PDF

    KM416S1020C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM416S1020

    Abstract: 2 Banks x 512K x 16
    Text: KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 0.6 Sep. 1998 KM416S1020C CMOS SDRAM Revision History


    Original     		PDF KM416S1020C 16bit KM416S1020C-H/L 100MHz KM416S1020C-8 KM416S1020C-7 115mA KM416S1020 2 Banks x 512K x 16

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020C CMOS SDRAM Revision History Revision 0.4 April 17, 1998 • Changed DC/AC Test Output Load from 30pF to 50pF in AC OPERATING TEST CONDITIONS . • Changed tOH from 2.5ns to 3ns in KM416S1020C-8/H/L/10 in AC CHARACTERISTICS . Revision 0.3 (April 2, 1998)


    Original     		PDF KM416S1020C KM416S1020C-8/H/L/10 KM416S1020C-8,

    KM416S1020

    Abstract: KM416S1020CT
    Text: KM416S1020C CMOS SDRAM 16Mbit SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.4 April 1998 -1- Rev. 0.4 Apr. 1998 KM416S1020C CMOS SDRAM Revision History Revision 0.4 (April 17, 1998) • Changed DC/AC Test Output Load from 30pF to 50pF in AC OPERATING TEST CONDITIONS .


    Original     		PDF KM416S1020C 16Mbit 16bit KM416S1020C-8/H/L/10 KM416S1020C-8, 10/AP KM416S1020 KM416S1020CT

    CAMERA motion detection

    Abstract: motion DETECTOR CIRCUIT DIAGRAM dpcm AF SO5 camera module af ECST dcp27 mark gb0 motion DETECTOR block DIAGRAM motion DETECTOR CIRCUIT
    Text: DATA SHEET KS7333 PRODUCT INFORMATION PRODUCT SUMMARY KS7333 is a product used in video camera systems, such as camcorders and surveillance camera systems that use charge coupled devices CCD . It takes the CCD input as digital data and performs 3-D interpolation, image


    Original     		PDF KS7333 KS7333 CAMERA motion detection motion DETECTOR CIRCUIT DIAGRAM dpcm AF SO5 camera module af ECST dcp27 mark gb0 motion DETECTOR block DIAGRAM motion DETECTOR CIRCUIT

    sio lpc chip intel p4 motherboard

    Abstract: rdi-dmt-1206 980020 NAND RJMG-5312-11-01 Amphenol RJMG intel 810 MOTHERBOARD pcb CIRCUIT rdi DMT-1206 intel 810 MOTHERBOARD pcb CIRCUIT diagram c.i GD75232 smd 82801 g SCHEMATIC DIAGRAM
    Text: Intel 810 Chipset Design Guide June 1999 Order Number: 290657-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability


    Original     		PDF

    microtek inverter circuit

    Abstract: SST28F040 data circuit schematics satellite connector PMC3370 u34 c634 12vdc to 120vac inverter schematic diagram smd diode L48 R735-R738 DS1834AS smd diode code L49
    Text: PM3575 APPLICATION NOTE PMC-981057 ISSUE 1 EXACT 24+2 REFERENCE DESIGN PM3575 EXACT 24 x 10/100 + 2 x 1000 ETHERNET SWITCH REFERENCE DESIGN ISSUE 1: FEBRUARY 1999 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE PM3575


    Original     		PDF PM3575 PMC-981057 microtek inverter circuit SST28F040 data circuit schematics satellite connector PMC3370 u34 c634 12vdc to 120vac inverter schematic diagram smd diode L48 R735-R738 DS1834AS smd diode code L49

    KMM366S204CTL-G0

    Abstract: No abstract text available
    Text: KMM366S204CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S204CTL 200mV. 2K/32ms 4K/64ms. KMM366S204CTL 2Mx64 1Mx16, 66MHz KMM366S204CTL-G0

    KMM466S104CT-F0

    Abstract: KM416S1020CT-F10
    Text: KMM466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Some Parameters values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1uA.


    Original     		PDF KMM466S104CT 144pin 200mV. 2K/32ms 4K/64ms. KMM466S104CT 1Mx64 1Mx16, KMM466S104CT-F0 KM416S1020CT-F10

    gmZ4S

    Abstract: 5400 samsung lcd monitor circuit diagram C0012-DSR-01C gmZ4U hyundai L19 MC141584 genesis lcd controller dram FSDATA45 lg crt monitor circuit diagram GM72V161621ET
    Text: DATA SHEET gmZ4 C0012-DAT-01C July 2000 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 2150 Gold Street, Alviso, CA USA 95002 Tel: (408) 262-6599 Fax: (408) 262-6365 www.genesis-microchip.com / info@genesis-microchip.on.ca


    Original     		PDF C0012-DAT-01C DAT-0012-A C0012-DAT-01B 256-pin gmZ4S 5400 samsung lcd monitor circuit diagram C0012-DSR-01C gmZ4U hyundai L19 MC141584 genesis lcd controller dram FSDATA45 lg crt monitor circuit diagram GM72V161621ET

    KM48S2020

    Abstract: KM48S2120 KM416S1120D KM44S4120D
    Text: Memory Application Team Tel: 82-331-209-5371 Fax: 82-2-760-7990 GRAPHIC MEMORY APPLICATION NOTE Refresh Cycle change from 4K/64ms in C-die to 2K/32ms in 16M SDRAM D-die Refresh cycle time change from 4K/64ms to 2K/32ms This note has been prepared in an attempt to inform you that the refresh cycle time of


    Original     		PDF 4K/64ms 2K/32ms 2K/32ms 2K/32ms. KM48S2020 KM48S2120 KM416S1120D KM44S4120D

    KMM366S104CT-G8

    Abstract: KMM366S104CT-GH KMM366S104CT-GL
    Text: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.


    Original     		PDF KMM366S104CT PC100 2K/32ms 4K/64ms. KMM366S104CT 1Mx64 1Mx16, 100Max KMM366S104CT-G8 KMM366S104CT-GH KMM366S104CT-GL

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020C CMOS SDRAM 1Mx 16 SDRAM 5 12K X 16bit X 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.6 Sep. 1998 ELECTRONICS KM416S1020C CMOS SDRAM


    OCR Scan     		PDF KM416S1020C 16bit KM416S1020C-H/L 100MHz KM416S1020C-8 KM416S1020C-7 115mA

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020C CMOS SDRAM 512K X 16Bitx 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S1020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		PDF KM416S1020C 16Bitx KM416S1020C 10/AP

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020C Preliminary CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .2 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.


    OCR Scan     		PDF KM416S1020C PC100 2K/32ms 4K/64ms.

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5 u A to ± 1uA, llL(DQ) : ± 5 u A to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1.4V ±200 mV.


    OCR Scan     		PDF KMM366S104CT PC100 2K/32ms 4K/64ms. KMM366S104CT 1Mx64 1Mx16,

    km4132g512

    Abstract: SGRAM RC2H KM4232W
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE . 9 II. DUAL PORT RAM DATA SHEETS 1.KM4216C256 . VRAM EDO, 2WE , 256Kx16 . 13 2.KM4216C258 . VRAM(EDO, 2CAS), 256Kx16 .54


    OCR Scan     		PDF KM4216C256 256Kx16 KM4216C258 KM4232W259A 256Kx32 KM4132G271B KM4132G512 512Kx32 km4132g512 SGRAM RC2H KM4232W

    Untitled

    Abstract: No abstract text available
    Text: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM466S104CT_ 144pin KMM466S104CT 1Mx64 1Mx16 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S104CTL KMM366S104CTL 1Mx64 1Mx16 400mil 166-pin 168-pin

    XC5L

    Abstract: No abstract text available
    Text: KMM466S204CT 144pin SDRAM SODIMM KMM466S204CT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S204CT Is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The SamsunQ


    OCR Scan     		PDF KMM466S204CT KMM466S204CT 144pin 2Mx64 1Mx16 KMM486S204CT 400mII 144-pin XC5L

    Untitled

    Abstract: No abstract text available
    Text: KM M466S1 04 CT 144pm S D R A M S O D IM M Revision History R evision .2 M ar. 1998 •Som e Parameters values & Characteristics of comp, level are changed as below : -In p u t leakage currents (Inputs) : ± 5 u A to ± 1 u A . -In p u t leakage currents (I/O) : ± 5 u A to ± 1 u A .


    OCR Scan     		PDF M466S1 144pm 200mV. 2K/32ms 4K/64ms. 44pin 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: KM M466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Som e Parameters values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 u A .


    OCR Scan     		PDF M466S104CT 144pin 200mV. 2K/32m 4K/64ms. KMM466S104CT

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.


    OCR Scan     		PDF KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S104CTL 1Mx64 1Mx16, 54Max)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PC100 SDRAM MODULE KMM366S204CT Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(lnputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23 °C, f = 1MHz, V


    OCR Scan     		PDF KMM366S204CT PC100 2K/32ms 4K/64ms. KMM366S204CT 2Mx64 1Mx16,