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    Untitled

    Abstract: No abstract text available
    Text: KM791001J CMOS SRAM 131,072 WORD x 9 Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 12.5, 15, 20ns Max. • Low Power Dissipation KM791001J-12: 200mA (Max.) KM791001J-15:180mA (Max.) KM791001J-20:150mA (Max.)


    OCR Scan     		PDF KM791001J KM791001J-12: 200mA KM791001J-15 180mA KM791001J-20 150mA KM791001J

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7 0 0 1 7 7 3 5 Tlô I SMfiK C M O S SRAM KM 791001J 131,072 WORD x 9 Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 12.5, 15, 20ns Max. • Low Power Dissipation KM791001J-12: 200mA (Max.)


    OCR Scan     		PDF 791001J KM791001J-12: 200mA KM791001J-15: 180mA KM791001J-20: 150mA KM791001J KM791001J OD17741

    64Kx8 CMOS RAM

    Abstract: KM428C257 zip 40pin 52PLCC
    Text: FUNCTION GUIDE MEMORY ICs Synchronous SRAM Power Dissipation Den. 1M 288K 512K Part Name KM741006 KM791001 256K 128K KM 79C86 KM 79C40 32K 32K KM 718B513 KM718BV513 KM 718B514 1M Speed ns 36 SOJ 32 SOJ Now NoW X 9 CMOS CMOS 190 190 44 PLCC 9 14/19/24 14/19/24


    OCR Scan     		PDF KM741006 KM791001 79C86 79C40 718B513 KM718BV513 718B514 KM718BV514 718B520 KM718BV520 64Kx8 CMOS RAM KM428C257 zip 40pin 52PLCC