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    KM416S1020 Price and Stock

    Samsung Semiconductor KM416S1020CT-G7

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    Quest Components KM416S1020CT-G7 114
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    KM416S1020CT-G7 481
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    Samsung Semiconductor KM416S1020CT-610

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    Samsung Semiconductor KM416S1020BT-G10

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    Samsung Semiconductor KM416S1020CTG10

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    ComSIT USA KM416S1020CTG10 990
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    Samsung Semiconductor KM416S1020CT-G10

    SDRAM, 1M x 16, 50 Pin, Plastic, TSOP
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    Quest Components KM416S1020CT-G10 798
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    KM416S1020 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM416S1020 Samsung Electronics 1M x 16 SDRAM 512K x 16-Bit x 2 Banks Synchronous D Original PDF
    KM416S1020CT Samsung Electronics KM416S1020CT 512K x 16-Bit x 2 Banks Synchronous DRAM Organization = 1Mx16 Vdd/Vddq(V) = 3.3 Speed(ns) = 60,70,80,10 Refresh = 4K/64ms Package = 50TSOP2 Interface = LVTTL Production Status = Eol Comments = 2B Original PDF
    KM416S1020CT-G10 Samsung Electronics KM416S1020CT 512K x 16-Bit x 2 Banks Synchronous DRAM Organization = 1Mx16 Vdd/Vddq(V) = 3.3 Speed(ns) = 60,70,80,10 Refresh = 4K/64ms Package = 50TSOP2 Interface = LVTTL Production Status = Eol Comments = 2B Original PDF
    KM416S1020CT-G8 Samsung Electronics KM416S1020CT 512K x 16-Bit x 2 Banks Synchronous DRAM Organization = 1Mx16 Vdd/Vddq(V) = 3.3 Speed(ns) = 60,70,80,10 Refresh = 4K/64ms Package = 50TSOP2 Interface = LVTTL Production Status = Eol Comments = 2B Original PDF

    KM416S1020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM416S1020

    Abstract: 2 Banks x 512K x 16
    Text: KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 0.6 Sep. 1998 KM416S1020C CMOS SDRAM Revision History


    Original     		PDF KM416S1020C 16bit KM416S1020C-H/L 100MHz KM416S1020C-8 KM416S1020C-7 115mA KM416S1020 2 Banks x 512K x 16

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020BT-G10T 1/2 IL08 C-MOS 16 M (1,048,576 x 16)-BIT SYNCHRONOUS DRAM —TOP VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 VDD GND GND GND VDD VDD GND GND VDD VDD NC NC VDD INPUT A0 -A10 A11 : : : CAS CKE : CLK : : CS LDQM, UDQM :


    Original     		PDF KM416S1020BT-G10T

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020C CMOS SDRAM Revision History Revision 0.4 April 17, 1998 • Changed DC/AC Test Output Load from 30pF to 50pF in AC OPERATING TEST CONDITIONS . • Changed tOH from 2.5ns to 3ns in KM416S1020C-8/H/L/10 in AC CHARACTERISTICS . Revision 0.3 (April 2, 1998)


    Original     		PDF KM416S1020C KM416S1020C-8/H/L/10 KM416S1020C-8,

    KM416S1020

    Abstract: KM416S1020CT
    Text: KM416S1020C CMOS SDRAM 16Mbit SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.4 April 1998 -1- Rev. 0.4 Apr. 1998 KM416S1020C CMOS SDRAM Revision History Revision 0.4 (April 17, 1998) • Changed DC/AC Test Output Load from 30pF to 50pF in AC OPERATING TEST CONDITIONS .


    Original     		PDF KM416S1020C 16Mbit 16bit KM416S1020C-8/H/L/10 KM416S1020C-8, 10/AP KM416S1020 KM416S1020CT

    CAMERA motion detection

    Abstract: motion DETECTOR CIRCUIT DIAGRAM dpcm AF SO5 camera module af ECST dcp27 mark gb0 motion DETECTOR block DIAGRAM motion DETECTOR CIRCUIT
    Text: DATA SHEET KS7333 PRODUCT INFORMATION PRODUCT SUMMARY KS7333 is a product used in video camera systems, such as camcorders and surveillance camera systems that use charge coupled devices CCD . It takes the CCD input as digital data and performs 3-D interpolation, image


    Original     		PDF KS7333 KS7333 CAMERA motion detection motion DETECTOR CIRCUIT DIAGRAM dpcm AF SO5 camera module af ECST dcp27 mark gb0 motion DETECTOR block DIAGRAM motion DETECTOR CIRCUIT

    eeprom programmer schematic 24c08

    Abstract: motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331
    Text: Preliminary ThunderSWITCH 8/3 Schematics Description and Schematics Reference Guide: SPWA023 Networking Business Unit Revision 0.2 April 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or


    Original     		PDF SPWA023 1000PF DS0026-001 eeprom programmer schematic 24c08 motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331

    Untitled

    Abstract: No abstract text available
    Text: User’s M anual, V1.1, Apr. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF TC11IB D-81541

    SAF-TC11IB-64D96E

    Abstract: p3x btr diagrams hitachi ecu Hitachi DSA00319 B.A. private examination 2011 manual 1746
    Text: User’s Manual, V2.0, Sep. 2003 TC11IB System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2003-09 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2003.


    Original     		PDF TC11IB 32-Bit D-81541 v135b AP326111 TC11IB AP3203011_ 2002-07/V1 TC11IBErrataSheetBBV17 SAF-TC11IB-64D96E p3x btr diagrams hitachi ecu Hitachi DSA00319 B.A. private examination 2011 manual 1746

    sio lpc chip intel p4 motherboard

    Abstract: rdi-dmt-1206 980020 NAND RJMG-5312-11-01 Amphenol RJMG intel 810 MOTHERBOARD pcb CIRCUIT rdi DMT-1206 intel 810 MOTHERBOARD pcb CIRCUIT diagram c.i GD75232 smd 82801 g SCHEMATIC DIAGRAM
    Text: Intel 810 Chipset Design Guide June 1999 Order Number: 290657-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability


    Original     		PDF

    MT48LC2M8A1-8B

    Abstract: 1F27FC04
    Text: Freescale Semiconductor Application Note AN2066/D Rev. 1.5, 11/2001 MPC8xx SDRAM Interface Freescale Semiconductor, Inc. Heinz Wrobel Freescale GmbH, Munich Janet Snyder NCSD Applications, Austin Part I Introduction In the long term, Synchronous DRAMs SDRAM offer system designers at least two


    Original     		PDF AN2066/D MT48LC2M8A1-8B 1F27FC04

    microtek inverter circuit

    Abstract: SST28F040 data circuit schematics satellite connector PMC3370 u34 c634 12vdc to 120vac inverter schematic diagram smd diode L48 R735-R738 DS1834AS smd diode code L49
    Text: PM3575 APPLICATION NOTE PMC-981057 ISSUE 1 EXACT 24+2 REFERENCE DESIGN PM3575 EXACT 24 x 10/100 + 2 x 1000 ETHERNET SWITCH REFERENCE DESIGN ISSUE 1: FEBRUARY 1999 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE PM3575


    Original     		PDF PM3575 PMC-981057 microtek inverter circuit SST28F040 data circuit schematics satellite connector PMC3370 u34 c634 12vdc to 120vac inverter schematic diagram smd diode L48 R735-R738 DS1834AS smd diode code L49

    lmb 1021

    Abstract: bosch MA 3.1 ecu map wiring 37 pin BOSCH ECU microcontroller bosch ecu 0 261 200 218 connection diagram bosch 0 261 s06 122 nec Microcontroller transistor full 2000 to 2012 TC1130 AC bridg Properties hyundai ECU IC
    Text: U s e r ’ s M a n u a l , V 1 .3 , N o v . 2004 TC1130 32-Bit Single-Chip Microcontroller Volume 1 of 2 : System Units Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2004-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany


    Original     		PDF TC1130 32-Bit lmb 1021 bosch MA 3.1 ecu map wiring 37 pin BOSCH ECU microcontroller bosch ecu 0 261 200 218 connection diagram bosch 0 261 s06 122 nec Microcontroller transistor full 2000 to 2012 TC1130 AC bridg Properties hyundai ECU IC

    74FCT164245

    Abstract: ba21 29F040J 74HC125 dip XC488CT-ND BA20 MICTOR-38 10UF 1N4148 MPC860
    Text: * MPC860 Reference Design Board SAMBA Release Guide * RELEASE: 0.3 DATE: 5/18/98 [CONTENTS] - Introduction Tools Used


    Original     		PDF MPC860 10/100BaseT MPC860T) 74FCT164245 ba21 29F040J 74HC125 dip XC488CT-ND BA20 MICTOR-38 10UF 1N4148

    PQ-33

    Abstract: PQ-12 PQ-31 E1BBBC04
    Text: MOTOROLA SEMICONDUCTOR DESIGN CONCEPT DC-11/10/98 - REV 1.0 MPC8xx SDRAM Interface Heinz Wrobel Motorola GmbH, Munich Janet Snyder, Spencer Jackson Motorola NetComm, Austin Gordon Lawton Motorola Ltd., East Kilbride 1. Introduction In the long term, Synchronous DRAMs SDRAM offer system designers at least two advantages over


    Original     		PDF DC--11/10/98 PQ-33 PQ-12 PQ-31 E1BBBC04

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020C CMOS SDRAM 512K X 16Bitx 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S1020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		PDF KM416S1020C 16Bitx KM416S1020C 10/AP

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020BT SDRAM ELECTRONICS 512K x 16B itx2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM416S1020BT KM416S1020B/KM416S1021B 50-TSOP2-400F 50-TSOP2-400R D03b2b2

    RFU1A

    Abstract: No abstract text available
    Text: KM416S1020C CMOS SDRAM 512K X 16Bit X 2 Banks Synchronous DRAM FEATURES • • • • GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs The KM416S1020C is 16,777,216 bits synchronous high data


    OCR Scan     		PDF KM416S1020C 16Bit KM416S1020C 50-TSOP2-400F 005toppt RFU1A

    KM416S1020B

    Abstract: QQ372G7
    Text: KM416S1020B CMOS SDRAM 512K X 16Bit X 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION •• JEDEC standard 3.3V power supply The KM416S1020B is 16,777,216 bits synchronous high data - LVTTL compatible with multiplexed address rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,


    OCR Scan     		PDF KM416S1020B 16Bit KM416S1020B G037213 QQ372G7

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020C Preliminary CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .2 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.


    OCR Scan     		PDF KM416S1020C PC100 2K/32ms 4K/64ms.

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5 u A to ± 1uA, llL(DQ) : ± 5 u A to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1.4V ±200 mV.


    OCR Scan     		PDF KMM366S104CT PC100 2K/32ms 4K/64ms. KMM366S104CT 1Mx64 1Mx16,

    km4132g512

    Abstract: SGRAM RC2H KM4232W
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE . 9 II. DUAL PORT RAM DATA SHEETS 1.KM4216C256 . VRAM EDO, 2WE , 256Kx16 . 13 2.KM4216C258 . VRAM(EDO, 2CAS), 256Kx16 .54


    OCR Scan     		PDF KM4216C256 256Kx16 KM4216C258 KM4232W259A 256Kx32 KM4132G271B KM4132G512 512Kx32 km4132g512 SGRAM RC2H KM4232W

    Untitled

    Abstract: No abstract text available
    Text: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM466S104CT_ 144pin KMM466S104CT 1Mx64 1Mx16 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S104CTL KMM366S104CTL 1Mx64 1Mx16 400mil 166-pin 168-pin