4Mx4 DRAM
Abstract: No abstract text available
Text: PcRam TS4MDM32V60 Description Features The TS4MDM32V60 is a 4,194,304-word by 32-bit • 4,194,304-word by 32-bit organization. dynamic RAM module. This module consists of 8 pcs • Fast Page Mode Operation. 4Mx4-bit, 3.3 volt, fast page mode DRAMs in TSOP
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TS4MDM32V60
TS4MDM32V60
304-word
32-bit
32-bit
4Mx4 DRAM
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simm EDO 72pin
Abstract: No abstract text available
Text: 72PIN EDO SIMM 32MB With 4Mx4 60ns TS8MED3260 Description Features The TS8MED3260 is a 8M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.
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72PIN
TS8MED3260
TS8MED3260
32-bit
simm EDO 72pin
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MSC23832D
Abstract: MSC23832D-60BS16
Text: This version: Mar. 8. 1999 Semiconductor MSC23832D-xxBS16/DS16 8,388,608-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23832D-xxBS16/DS16 is a fully decoded, 8,388,608-word x 32-bit CMOS dynamic random access memory module composed of sixteen 16Mb DRAMs 4Mx4 in SOJ packages mounted with sixteen decoupling
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MSC23832D-xxBS16/DS16
608-word
32-bit
MSC23832D-xxBS16/DS16
72-pin
MSC23832D
MSC23832D-60BS16
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MSC23436C
Abstract: No abstract text available
Text: This version: Apr. 7. 1999 Semiconductor MSC23436C-xxBS10/DS10 4,194,304-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23436C-xxBS10/DS10 is a 4,194,304-word x 36-bit CMOS dynamic random access memory module which is composed of eight 16Mb 4Mx4 DRAMs in SOJ packages and two 8Mb(4Mx2) DRAMs in SOJ packages
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MSC23436C-xxBS10/DS10
304-word
36-bit
MSC23436C-xxBS10/DS10
72-pin
MSC23436C
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1MX16
Abstract: CCIR601 CCIR656 PBGA388
Text: STPC CONSUMER-S PC Compatible Embeded Microprocessor • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ POWERFUL x86 PROCESSOR 64-BIT 66MHz SDRAM UMA CONTROLLER -SUPPORTS 16Mbit SDRAMs 4MX4, 2MX8, 1MX16 . VGA & SVGA CRT CONTROLLER 2D GRAPHICS ENGINE
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64-BIT
66MHz
16Mbit
1MX16)
16-BIT
1MX16
CCIR601
CCIR656
PBGA388
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MSC23V43257D
Abstract: MSC23V43257D-50BS8 MSC23V43257D-60BS8 MSC23V43257D-70BS8
Text: This version: Apr. 13. 1999 Semiconductor MSC23V43257D-xxBS8 4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC23V43257D-xxBS8 is a 4,194,304-word x 32-bit CMOS dynamic random access memory module which is composed of eight 16Mb 4Mx4 DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an
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MSC23V43257D-xxBS8
304-word
32-bit
MSC23V43257D-xxBS8
100-pin
MSC23V43257D
MSC23V43257D-50BS8
MSC23V43257D-60BS8
MSC23V43257D-70BS8
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Untitled
Abstract: No abstract text available
Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time
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0316409C
0316169C
0316809C
1Mx16
16Mbit
-12ns
545-DRAM;
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Untitled
Abstract: No abstract text available
Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page
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0316409C
0316169C
0316809C
1Mx16
16Mbit
SM2402T-6
SM2403T-6
SM2404T-6
SM2402T-7
SM2403T-7
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Untitled
Abstract: No abstract text available
Text: UG9M43722 4 KBG(T) 16M Bytes (4M x 36) DRAM 72Pin SIMM w/ECC based on 4M X 4 General Description Features The UG9M43722(4)KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG9M43722(4)KBG(T) is assembled using 9 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package mounted on 72 Pin
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UG9M43722
72Pin
300mil
1000mil)
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Untitled
Abstract: No abstract text available
Text: UG54W742 4 4GJ(T)G 32M Bytes (4M x 72) DRAM 168Pin DIMM With ECC based on 4M x 4 General Description Features The UG54W742(4)4GJ(T)G is a 4,194,304 bits by 72 EDO DRAM module. The UG54W742(4)4GJ(T)G is assembled using 18 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in
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UG54W742
168Pin
300mil
168-pin
100Max
54Max
540Min)
100Min
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Untitled
Abstract: No abstract text available
Text: UG54W662 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54W662(4)4GJ(T)G is a 4,194,304 bits by 64 EDO DRAM module. The UG54W662(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in
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UG54W662
168Pin
300mil
168-pin
350Max
89Max
540Min)
100Min
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DIMM 72 pin out
Abstract: No abstract text available
Text: 8M x 72 Bit 3.3V BUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 72805sEDM2G39TK 168 Pin 8Mx72 EDO DIMM Buffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72805sEDM2G39TK is a 8Mx72 bit, 39 chip, 3.3V, 168 Pin DIMM module consisting of (36) 4Mx4
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72805sEDM2G39TK
8Mx72
DS492-0
DIMM 72 pin out
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we 510
Abstract: No abstract text available
Text: UG18M83602KBT-6AT 32M Bytes 8M x 36 DRAM 72Pin SIMM w/Parity based on 4M X 4 General Description Features The UG18M83602KBT-6AT is a 8,388,608 bits by 36 SIMM module. The UG18M83602KBT-6AT is assembled using 16 pcs of 4Mx4 2K refresh DRAMs 2 pcs of 4Mx4
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UG18M83602KBT-6AT
72Pin
UG18M83602KBT-6AT
1000mil)
we 510
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Untitled
Abstract: No abstract text available
Text: UG58E642 4 4GJ(T)L 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG58E642(4)4GJ(T)L is a 8,388,608 bits by 64 EDO DRAM module. The UG58E642(4)4GJ(T)L is assembled using 32 pcs of 4Mx4 2K/4K refresh DRAMs in 300mil SOJ/TSOP package, and
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UG58E642
168Pin
300mil
ABT16244
240mil
168-pin
1250mil)
190Max
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Untitled
Abstract: No abstract text available
Text: SMART SM5320440UUFUGU Modular Technologies September 8, 1997 16MByte 4M x 32 DRAM Module - 4Mx4 based 100-pin DIMM, Non-buffered Features Part Numbers • • • • • • • • • • • SM53204400UFUGU SM53204401UFUGU SM53204408UFUGU SM53204409UFUGU
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SM5320440UUFUGU
16MByte
100-pin
SM53204400UFUGU
SM53204401UFUGU
SM53204408UFUGU
SM53204409UFUGU
60/70/80ns
300mil
AMP-390070-6
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Untitled
Abstract: No abstract text available
Text: SMART SM5664002EC/4EC Modular Technologies March 25, 1997 32MByte 4M x 66 DRAM Module - 4Mx4 based 168-pin DIMM, Buffered, ECC Features • • • • • • • • • • Configuration : ECC Access Time : 50/60/70ns Operation Mode : FPM Operating Voltage :
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SM5664002EC/4EC
32MByte
168-pin
50/60/70ns
300mil
AMP-390052-1
4Mx33
A10/A11
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Untitled
Abstract: No abstract text available
Text: SMART SM536084002P3UU Modular Technologies December 13, 1996 32MByte 8M x 36 DRAM Module - 4Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM
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SM536084002P3UU
32MByte
72-pin
60/70/80ns
300mil
AMP-7-382486-2
AMP-822019-4
AMP-822110-3
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Untitled
Abstract: No abstract text available
Text: SMART SM5360440UUEUUU Modular Technologies May 19, 1997 16MByte 4M x 36 DRAM Module - 4Mx4 based 72-pin SIMM, ECC Features Part Numbers • • • • • • • • • • • SM53604400UEUUU SM53604401UEUUU SM53604408UEUUU SM53604409UEUUU Standard
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SM5360440UUEUUU
16MByte
72-pin
SM53604400UEUUU
SM53604401UEUUU
SM53604408UEUUU
SM53604409UEUUU
60/70/80ns
300mil
AMP-7-382486-2
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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Untitled
Abstract: No abstract text available
Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs
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16Mbit
HY57V164010-
HY57V168010-
HY57V161610-
1Mx16bit
HY57V164010,
HY57V168010,
HY57V161610
512Kbit
1SD10-Q3-NOV96
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MSC23436D
Abstract: No abstract text available
Text: This version: Mar. 8.1999 O K I Semiconductor MSC23436D-xxBS10/DS10 4,194,304-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23436D-xxBS10/DS10 is a fully decoded, 4,194,304-word x 36-bit CMOS dynamic random access memory module composed of eight 16Mb DRAMs 4Mx4 in SOJ packages and two 8Mb DRAMs (4Mx2) in SOJ
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MSC23436D-XXBS10/DS10
304-word
36-bit
MSC23436D-xxBS10/DS10
72-pin
MSC23436D
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Untitled
Abstract: No abstract text available
Text: EDI444097C-RP ^EDI 4Megx4 Fast Page DRAM Ruggedized Plastic ELECTRONIC DESIGNS, INC 4 Megabit x 4 Dynamic RAM 5V, Fast Page Features EDI's ruggedized plastic 4Mx4 DRAM allows the user to capitalize on the cost advantage of using a plastic compo 4 Meg x 4 bit CMOS Dynamic
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EDI444097C-RP
EDI444097C60SI
EDI444097C70SI
24126Plastic
EDI444097C-RP
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Untitled
Abstract: No abstract text available
Text: WMD4M4-XXX WHITE /MICROELECTRONICS 4Mx4 CMOS FPM Dynamic RAM advanced* FEATURES • Fast Access Tim e tRAc : 70, 8 0 ,1 00ns ■ TTL-Compatible Inputs and Outputs ■ Pow er Supply: 5V + 0.5V ■ RAS-Only Refresh ■ Packaging: ■ CAS Before RAS Refresh
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Abstract: No abstract text available
Text: \ 'A WHITE MICROELECTRONICS 4Mx4 CMOS EDO Dynamic RAM 3.3V WPDE4M4V-XMJX PRELIMINARY* PLASTIC PLUS FEATURES • Fast Access Time tRAc : 6 0 ,70ns PIN CONFIGURATION Power Supply: 3.3V + 0.3V 300 MIL SOJ ■ TOP VIEW Packaging • 24/26 Plastic SOJ (MJ)
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