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    KM23C4 Search Results

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    KM23C4 Price and Stock

    Samsung Semiconductor KM23C4200BR10SA

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    Bristol Electronics KM23C4200BR10SA 1,035
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    Samsung Semiconductor KM23C4000C

    KM23C4000C
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    Quest Components KM23C4000C 100
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    Samsung Semiconductor KM23C4000B-15

    ROM, 512K x 8, 32 Pin, Plastic, DIP
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    Quest Components KM23C4000B-15 30
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    Samsung Semiconductor KM23C4100B

    IC'S
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    Quest Components KM23C4100B 9
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    Samsung Semiconductor KM23C4000C-12

    ROM, 512K x 8, 32 Pin, Plastic, DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM23C4000C-12 1
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    KM23C4 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM23C4000D-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000D-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000D-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DETY-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DETY-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DETY-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DG-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DG-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DG-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DTY-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DTY-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DTY-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4100D-10 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100D-12 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100D-8 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DET Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DET-10 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DET-12 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DET-8 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23C4100DG-10 Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF

    KM23C4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES • 262,144 x 16 bit organization • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


    Original     		PDF KM23C4200D 256Kx16) 40-DIP-600 KM23C4200D KM23C4200D-12 40-DIP-600) 015MIN

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original     		PDF KM23C4000D 512Kx8) 32-TSOP1-0820 331MAX 010TYP 047MAX

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original     		PDF KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original     		PDF KM23C4000D 512Kx8) 32-TSOP1-0820 32-TSOP1-0820) 331MAX 047MAX

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 524,288x8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50m A(M ax.) Standby : 50|iA(M ax.)


    OCR Scan     		PDF KM23C4000D 512Kx8) 288x8 23C4000D 32-DIP-600 23C4000DG 32-SOP-525 23C4000D

    KM23C4001

    Abstract: No abstract text available
    Text: SAM SUN G E L E C T R O N I C S INC 42E El 7 clb m M B oonm o 5 QSNGK KM23C4001 CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM V ‘ ! ' 1 3 - 1 3 - / 5 FEATURES GENERAL DESCRIPTION • • • • The KM23C4001 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using


    OCR Scan     		PDF KM23C4001 512Kx8) KM23C4001 288x8 150ns 32-pin, 600mll, b4142

    Untitled

    Abstract: No abstract text available
    Text: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES The KM 23C4200D is a fully static m ask program m able ROM >262,144 x 16 bit organization > Fast access tim e : 80ns(M ax.) >Supply voltage : single +5V > Current consumption


    OCR Scan     		PDF KM23C4200D 256Kx16) 23C4200D 23C4200D 40-DIP-600 40-DIP.

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E D • 7^4142 KM23C4200B J D017G22 J13 CMOS MASK ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.)


    OCR Scan     		PDF KM23C4200B D017G22 8/256K 120ns 40-pin 44-pin, KM23C4200B) KM23C4200BJ)

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000B CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES • • • • • • • • • GENERAL DESCRIPTION 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50ftA (max.)


    OCR Scan     		PDF KM23C4000B 512Kx8) 120ns 50ftA 32-pin 23C4000B) KM23C4000BG

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable ROM organized 524,288 x 8bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all


    OCR Scan     		PDF KM23C4000D 512KX8) 32-TSQP1-0820 100pF KM2JC4000D KM23C4 TY-10 KMZ3C4000D

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000H G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000H is a fully static mask programmable ROM organized 524,288 x 8 brt. It Is fabricated using sillcon-gate CMOS process technology. • • •


    OCR Scan     		PDF KM23C4000H 512Kx8) 100ns 32-pin

    mask rom

    Abstract: No abstract text available
    Text: KM23C4200D CMOS MASK ROM 4M-Bit 256KX16 CMOS MASK ROM (EPROM TYPE) FEATURES • • • • • • • • GENERAL D ESCRIPTIO N 262,144 x 16 bit organization Fast access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : SOmA(Max )


    OCR Scan     		PDF KM23C4200D 256KX16) 40-DIP-600 KM23C4200D 100pF KM2JC4200D-S KM23C4200D-10 KM23C42000-12 mask rom

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C4000D(E)TY is a fully static mask programm able • • • • 524,288 x 8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V


    OCR Scan     		PDF KM23C4000D 512Kx8) 23C4000D 32-TSO P1-0820 TY-10 TY-12

    KM23C4001b

    Abstract: mask rom TA-51
    Text: KM23C4001B G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization


    OCR Scan     		PDF KM23C4001B 512KX8) 120ns 32-pin, 600mll, 288x8 mask rom TA-51

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000H CMOS MASK ROM 4M-Bit 5 1 2K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 23 C 4 000 H is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 x 8 bit. It is fabricated using silicon -gate CMOS process tech nolog y


    OCR Scan     		PDF KM23C4000H 100ns 32-pin KM23C4000H) KM23C4000HG)

    KM23C4100

    Abstract: No abstract text available
    Text: KM23C4100 CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C4100 8/256K 150ns 40-pin 44-pin KM23C4100 23C4100 KM23C4100)

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS IN C h?E D • 7^4142 KM23C4001H G D O lb ^ TQ2 CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fu lly s ta tic m ask program m able ROM organized 5 2 4 ,2 8 8 x8 bit. It is fabricated using


    OCR Scan     		PDF KM23C4001H 512Kx8) 100ns 32-pin, 600mil, KM23C4001 0D17G02 KM23C4001H)

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E D 7^145 KM23C4000H G DDlb*Jflb 354 « S M C K CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 4 0 0 0 H is a fully static mask programmable R O M organized 524,288 x 8 bit. It is fabricated u sin g


    OCR Scan     		PDF KM23C4000H 512Kx8) 100ns 100//A 32-pin 23C4000H) 23C4000HG)

    NSI150

    Abstract: No abstract text available
    Text: KM23C4001H CMOS MASK ROM 4M-BH 512Kx 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization


    OCR Scan     		PDF KM23C4001H 512Kx KM23C4001H 288x8 100ns 32-pin, 600mil, KM23C4001H) NSI150

    Untitled

    Abstract: No abstract text available
    Text: SAM SUN G E L E C T R O N I C S 42E » INC B 7Tb41M2 001113b 3 H S M G K KM 23C 4000A CMOS MASK ROM ¡-v q c -B -fS 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4Q00A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using


    OCR Scan     		PDF 7Tb41M2 001113b 512Kx8) KM23C4Q00A 120ns 50jjA 32-pin 23C4000A) 23C4000AG)

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC 42E D E3 7=Jb4142 G O I U S M 5 SSMGK CMOS MASK ROM KM23C4100A 4M-Bit 512Kx8/256Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte Mode: 524,288 x 8 W ord M ode: 26 2,14 4x16 • Fast access tim e : 120ns (m ax.)


    OCR Scan     		PDF Jb4142 KM23C4100A 512Kx8/256Kx 120ns 40-pln 44-pin 23C4100A 0D111S7 23C4100A) KM23C4100AFP1)

    KM23C4200C15

    Abstract: No abstract text available
    Text: KM23C4200C C M O S M a s k ROM ELECTRONICS 4M-Bit 256KX16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 262,144 x16 bit organization • Fast access time :100ns(max.) • Supply voltage : single + 5 V • Current consumption Operating :60 mA(max.) Standby : 50 pA (max.)


    OCR Scan     		PDF KM23C4200C 256KX16) 100ns 4200C 4200C 144x16bit. KM23C4200C) KM23C4200C15

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000B CMOS MASK ROM 4M-Bit 512Kx 8 CMOS MASK ROM FEATURES • • • • • • • • • 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50/iA (max.) Fully static operation


    OCR Scan     		PDF KM23C4000B 512Kx 120ns 50/iA 32-pin 32-pln KM23C4000B) KM23C4000BG)

    KM23C4100B

    Abstract: No abstract text available
    Text: KM23C4100B CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byle Mode: 524,286 x 8 Word Mode: 26 2,14 4x1 6 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C4100B 512Kx 8/256K 120ns 40-pin 44-pin KM23C4100B) KM23C4100BFP1) KM23C4100B