Untitled
Abstract: No abstract text available
Text: SAM SUN G E L E C T R O N I C S 42E » INC B 7Tb41M2 001113b 3 H S M G K KM 23C 4000A CMOS MASK ROM ¡-v q c -B -fS 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4Q00A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using
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7Tb41M2
001113b
512Kx8)
KM23C4Q00A
120ns
50jjA
32-pin
23C4000A)
23C4000AG)
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KSA542
Abstract: KSC184
Text: SAMSUNG S EMI C O N D U C T O R INC 14£ KSÛ 104 | 7Tb41M2 OOObflM? | ]%T NPN EPITAXIAL SILICON TRANSISTOR AM FREQUENCY CONVERTER IF AMPLIFIER !-Ì TO-92 • Currant Gain Bandwidth Product tT=100MHz fiyp • Complement to KSA542 ABSOLUTE MAXIMUM RATINGS Ta=25°C)
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100MHz
KSA542
lc-100/iA,
KSC184
T-31-17
KSA542
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Samsung tv circuit diagram
Abstract: samsung s4 Samsung s3 ka2104 circuit diagram for auto on off samsung fbt
Text: SAMSUNG S E M I C 0 N 1 U C T 0 R I N C ^ I ^ T e )| 7Tb41M2 DOOM lD a t ' '' ' '~ KA2104 ; T-ni-oi-cn LINEAR INTEGRATED CIRCUIT AUTO POWER OFF AND SOUND MUTE SYSTEM FOR TV The KA2104 is a monolithic integrated circuit designed for noise sound muting and auto power off when channel without broadcasting selected
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7Tb41M2
KA2104
KA2104
28Vpeak)
Samsung tv circuit diagram
samsung s4
Samsung s3
circuit diagram for auto on off
samsung fbt
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74118
Abstract: ttl 74118 1FT65 D0341A4 ci 74118 GD341 1MX4 1003-D
Text: KM44C1003DJ CMOS DRAM E LE C T R O N IC S 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CA S C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Access time -5, -6 or -7 , powér
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KM44C
1003D
16Mx4,
512Kx8)
KM44C1003DJ
7Tb4142
003Mlfi^
74118
ttl 74118
1FT65
D0341A4
ci 74118
GD341
1MX4
1003-D
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Untitled
Abstract: No abstract text available
Text: KMM372C213BK/BS DRAM MODULE KMM372C213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Samsung KMM372C213B is a 2M bit x 72 • Part Identification - KMM372C213BK 2048 cycles/32ms, SOJ Dynamic RAM high density memory module. The
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KMM372C213BK/BS
KMM372C213BK/BS
2Mx72
KMM372C213B
KMM372C213BK
cycles/32ms,
300mil
48pin
168-pin
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Untitled
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR KSC5024 HIGH VOLTAGE AND HIGH RELIABILITY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
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KSC5024
100mA
7Tb41M2
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KM48S8031AT-G
Abstract: No abstract text available
Text: K M 4 8 S 8 0 3 1 AT SDRAM ELECTRONICS 2M x QBit x 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class 11 compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.
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KM48S8030A/KM48S8031A
48S8031AT)
KM48S8031AT-G
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C1204B
Abstract: tsop 3021 DIN 3021 STANDARD AA3021
Text: KM416C1004BT ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1004BT
16Bit
1Mx16
71bm42
302tib
C1204B
tsop 3021
DIN 3021 STANDARD
AA3021
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C1204B
Abstract: No abstract text available
Text: KM416V1004BT CMOS D R A M 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416V1004BT
16Bit
1Mx16
C1204B
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256X8* sram
Abstract: No abstract text available
Text: Prelim inary CMOS SRAM KM681001B/BL, KM681001BI/BLI 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17, 20* • Max. •• Low Power Dissipation Standby (TTL) : 20* • (Max.) (CM O S): 5 *»(Max.) 0.5* (Max.) - L-Ver. only
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KM681001B/BL,
KM681001BI/BLI
KM681001
KM681001B/BLJ
32-SOJ-400
KM681001B/BLSJ
32-SQJ-300
256X8* sram
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam ic RAM high density memory module. The Samsung
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GG1472D
KMM532512W/WG
KMM532512W
40-pin
72-pin
22jiF
130ns
150ns
180ns
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cpl16
Abstract: No abstract text available
Text: ~ T z<f ù - / ' $ 7964142 SAMSUNG SEMICONDUCTOR CPL20 s 7 c]t141 42 D D O b b b T S A M S U N G S E M I C O N D U C T O R INC G2 IN C 0 2E 06669 D - —— CMOS Programmable Logic Array 20-Pin Series FEATURES/BENEFITS DESCRIPTION * High-speed CMOS equivalent to Bipolar PALs
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CPL20
20-Pin
CPL20
PAL20
D00t71ñ
cpl16
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KS0119 MULTIMEDIA VIDEO NTSC ENCODER The KS0119 NTSC encoder is a member of the Samsung multimedia chip family. It combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either
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KS0119
KS0119
RS-170A
2b024
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Untitled
Abstract: No abstract text available
Text: KSOl19Q2 Multimedia ELECTRO NICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels
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KSOl19Q2
KS0119/KS0119Q2
KS0119Q2
KS0119.
RS-170A
S0119Q
00335bb
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