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    Untitled

    Abstract: No abstract text available
    Text: SAM SUN G E L E C T R O N I C S 42E » INC B 7Tb41M2 001113b 3 H S M G K KM 23C 4000A CMOS MASK ROM ¡-v q c -B -fS 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4Q00A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using


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    PDF 7Tb41M2 001113b 512Kx8) KM23C4Q00A 120ns 50jjA 32-pin 23C4000A) 23C4000AG)

    KSA542

    Abstract: KSC184
    Text: SAMSUNG S EMI C O N D U C T O R INC 14£ KSÛ 104 | 7Tb41M2 OOObflM? | ]%T NPN EPITAXIAL SILICON TRANSISTOR AM FREQUENCY CONVERTER IF AMPLIFIER !-Ì TO-92 • Currant Gain Bandwidth Product tT=100MHz fiyp • Complement to KSA542 ABSOLUTE MAXIMUM RATINGS Ta=25°C)


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    PDF 100MHz KSA542 lc-100/iA, KSC184 T-31-17 KSA542

    Samsung tv circuit diagram

    Abstract: samsung s4 Samsung s3 ka2104 circuit diagram for auto on off samsung fbt
    Text: SAMSUNG S E M I C 0 N 1 U C T 0 R I N C ^ I ^ T e )| 7Tb41M2 DOOM lD a t ' '' ' '~ KA2104 ; T-ni-oi-cn LINEAR INTEGRATED CIRCUIT AUTO POWER OFF AND SOUND MUTE SYSTEM FOR TV The KA2104 is a monolithic integrated circuit designed for noise sound muting and auto power off when channel without broadcasting selected


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    PDF 7Tb41M2 KA2104 KA2104 28Vpeak) Samsung tv circuit diagram samsung s4 Samsung s3 circuit diagram for auto on off samsung fbt

    74118

    Abstract: ttl 74118 1FT65 D0341A4 ci 74118 GD341 1MX4 1003-D
    Text: KM44C1003DJ CMOS DRAM E LE C T R O N IC S 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CA S C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Access time -5, -6 or -7 , powér


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    PDF KM44C 1003D 16Mx4, 512Kx8) KM44C1003DJ 7Tb4142 003Mlfi^ 74118 ttl 74118 1FT65 D0341A4 ci 74118 GD341 1MX4 1003-D

    Untitled

    Abstract: No abstract text available
    Text: KMM372C213BK/BS DRAM MODULE KMM372C213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Samsung KMM372C213B is a 2M bit x 72 • Part Identification - KMM372C213BK 2048 cycles/32ms, SOJ Dynamic RAM high density memory module. The


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    PDF KMM372C213BK/BS KMM372C213BK/BS 2Mx72 KMM372C213B KMM372C213BK cycles/32ms, 300mil 48pin 168-pin

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON TRANSISTOR KSC5024 HIGH VOLTAGE AND HIGH RELIABILITY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)


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    PDF KSC5024 100mA 7Tb41M2

    KM48S8031AT-G

    Abstract: No abstract text available
    Text: K M 4 8 S 8 0 3 1 AT SDRAM ELECTRONICS 2M x QBit x 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class 11 compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.


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    PDF KM48S8030A/KM48S8031A 48S8031AT) KM48S8031AT-G

    C1204B

    Abstract: tsop 3021 DIN 3021 STANDARD AA3021
    Text: KM416C1004BT ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM416C1004BT 16Bit 1Mx16 71bm42 302tib C1204B tsop 3021 DIN 3021 STANDARD AA3021

    C1204B

    Abstract: No abstract text available
    Text: KM416V1004BT CMOS D R A M 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM416V1004BT 16Bit 1Mx16 C1204B

    256X8* sram

    Abstract: No abstract text available
    Text: Prelim inary CMOS SRAM KM681001B/BL, KM681001BI/BLI 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17, 20* • Max. •• Low Power Dissipation Standby (TTL) : 20* • (Max.) (CM O S): 5 *»(Max.) 0.5* (Max.) - L-Ver. only


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    PDF KM681001B/BL, KM681001BI/BLI KM681001 KM681001B/BLJ 32-SOJ-400 KM681001B/BLSJ 32-SQJ-300 256X8* sram

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam­ ic RAM high density memory module. The Samsung


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    PDF GG1472D KMM532512W/WG KMM532512W 40-pin 72-pin 22jiF 130ns 150ns 180ns

    cpl16

    Abstract: No abstract text available
    Text: ~ T z<f ù - / ' $ 7964142 SAMSUNG SEMICONDUCTOR CPL20 s 7 c]t141 42 D D O b b b T S A M S U N G S E M I C O N D U C T O R INC G2 IN C 0 2E 06669 D - —— CMOS Programmable Logic Array 20-Pin Series FEATURES/BENEFITS DESCRIPTION * High-speed CMOS equivalent to Bipolar PALs


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    PDF CPL20 20-Pin CPL20 PAL20 D00t71ñ cpl16

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KS0119 MULTIMEDIA VIDEO NTSC ENCODER The KS0119 NTSC encoder is a member of the Samsung multimedia chip family. It combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either


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    PDF KS0119 KS0119 RS-170A 2b024

    Untitled

    Abstract: No abstract text available
    Text: KSOl19Q2 Multimedia ELECTRO NICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels


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    PDF KSOl19Q2 KS0119/KS0119Q2 KS0119Q2 KS0119. RS-170A S0119Q 00335bb