Untitled
Abstract: No abstract text available
Text: S A MS UN G E L E C T R O N I C S INC 42E D E3 7=Jb4142 G O I U S M 5 SSMGK CMOS MASK ROM KM23C4100A 4M-Bit 512Kx8/256Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte Mode: 524,288 x 8 W ord M ode: 26 2,14 4x16 • Fast access tim e : 120ns (m ax.)
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Jb4142
KM23C4100A
512Kx8/256Kx
120ns
40-pln
44-pin
23C4100A
0D111S7
23C4100A)
KM23C4100AFP1)
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P40Y
Abstract: KS57P3016 KS57C3016 4J, P113 5 PIN
Text: K S 5 7 P 3 0 16MTP ELECTRONICS Mi crocont roll er KS57P3016 MTP The KS57P3016 single-chip CMOS microcontroller is the MTP Multiple Times Programmable version of the KS57C3016 microcontroller. It has an on-chip E2PROM instead of masked ROM. The KS57P3016 is fully
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16MTP
KS57P3016
KS57C3016
KS57C3016,
KS57C3016.
KS57P3016MTP
P40Y
4J, P113 5 PIN
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KM44V4100BS
Abstract: Oi24 A10QZ
Text: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44V4100BS
16Mx4,
512Kx8)
b414E
7Tb4142
KM44V4100BS
Oi24
A10QZ
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR L T 104V 3-102 S pecifications April 1995, Rev. 1 CONTENTS PAGE Record of Revision 3 General Description 4 1. Absolute Maximum Rating 5 1-1 Environmental Absolute Ratings 1-2 Electrical Absolute Ratings 2. Optical Characteristics 6 3. Electrical Characteristics
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----------LT104V3-102-01
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samsung p28
Abstract: No abstract text available
Text: K S O l 19 Multimedia ELECTRONICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels
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KS0119/KS0119Q2
KS0119Q2
KS0119.
S0119)
GD33521
D033522
samsung p28
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96-Seg
Abstract: No abstract text available
Text: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features
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KS57C2408
KS57C2408
up-to-12-digit
16-bit
80-pin
002b535
71b4142
D0SbS37
96-Seg
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1dq10
Abstract: No abstract text available
Text: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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KM416C254B,
KM416V254B
256Kx16
0D23223
1dq10
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Untitled
Abstract: No abstract text available
Text: -c u l l i l i» K S 57C 2504 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C2504 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With up to 320-dot LCD direct-drive capability, 8-bit timer/counter, serial I/O, and comparator, the KS57C2504 offers an
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KS57C2504
320-dot
0011B.
KS57C2504
0000B.
1001B,
7Tb4142
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Untitled
Abstract: No abstract text available
Text: KM44C1002C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random or sequential access of memory cells within the same row. Access time -5, -6, -7 or -8 and
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KM44C1002C
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Untitled
Abstract: No abstract text available
Text: KM41C16002A/AI_/ALL/ASL CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16002A/AL/ALL/ASL is a high speed CMOS 16,777,216 bit x 1 Dynamic Random Access Memory. Its design is optim ized for high
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KM41C16002A/AI
KM41C16002A/AL/ALL/ASL
6002A
130ns
KM41C16002A/AL/ALL/ASL
24-LEAD
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IRFS530
Abstract: IRFS531
Text: N-CHANNEL POWER MOSFETS IRFS530/531 FEATURES • • • • • • • Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFS530/531
IRFS530
IRFS531
O-220F
7Tb4142
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samsung crt monitor circuit diagram
Abstract: A0484 samsung crt monitor vga circuit diagram 0Q-22
Text: KDA0484 85MHz Monolithic CMOS True-Color RAM DAC SEMICONDUCTOR Preliminary — March, 1994 FUNCTIONAL DESCRIPTION KDA0484 FEATURES • 8:1, 4:1, 2 :1 ,1 :1 MUX Pixel Ports • 85MHz, 75MHz Pixel Clock • Separate 8-bit VGA Port Microprocessor Interface The KDA0484 support a standard microprocessor bus
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KDA0484
85MHz
KDA0484
85MHz,
75MHz
256x8
32x32x2
84-Pin
KDA0484L-85
samsung crt monitor circuit diagram
A0484
samsung crt monitor vga circuit diagram
0Q-22
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U321
Abstract: U320 DIODE s31a IRFR321 ui 321
Text: N-CHANNEL POWER MOSFETS IRFR320/321 IRFU320/321 FEATURES D-PAK • Low er R ds < on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFR320/321
IRFU320/321
IRFR320/U320
IRFR321/U321
IRFU320/321
S-20V
Tj-25
U321
U320 DIODE
s31a
IRFR321
ui 321
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IRF9610
Abstract: IRF9611
Text: P-CHANNEL POWER MOSFETS IRF9610/9611 FEATURES • Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRF9610/9611
IRF9610
-200V
IRF9611
-150V
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C254D
Abstract: cmos dram NCC KMQ
Text: KM416V254DJ ELECTRONICS CMOS D R A M 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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V254DJ
256Kx16
OT7T2733T
KM416V254DJ
003242b
C254D
cmos dram
NCC KMQ
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Untitled
Abstract: No abstract text available
Text: KM68BV4002 BiCMOS SRAM 512 K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) The KM68BV4002 is a 4,194,304-bit high-speed Static
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KM68BV4002
KM68BV4002
304-bit
KM68BV4002-12
KM68BV4002-13:
KM68BV4002-15:
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44C1000
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E KM44C1000/L T> a 7^4142 001G2G4 - ^ 0 fflSflüK CMOS DRAM 1MX4 Bit CMOS Dynamic RAM with Fast Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1000/L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 dynamic Random Access Memory.
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KM44C1000/L
001G2G4
1000/L
180ns
20-LEAD
44C1000
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Untitled
Abstract: No abstract text available
Text: KMM5364005BK/BKG KMM5364105BK/BKG DRAM MODULE KMM5364005BK/BKG & KMM5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M 53640 1 05BK is a 4M bit x 36 • Part Identification
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KMM5364005BK/BKG
KMM5364105BK/BKG
KMM5364105BK/BKG
4Mx36
KMM5364005BK
cycles/64ms
KMM53640
KMM5364005BKG
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Untitled
Abstract: No abstract text available
Text: K S57C 0108 4-BIT CMOS Microcontroller ELECTRO N ICS Product Specification OVERVIEW The KS57C0108 single-chip CMOS microcontroller has been designed for high-performance using Samsung's newest 4-bit CPU core. With two 8-bit timer/counters, an 8-bit serial I/O interface, and eight n-channel open-drain
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KS57C0108
42-pin
44-pin
002b21fl
71L4142
QG2b211
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BTS630
Abstract: GDS5163 KSP8598 KSP8599
Text: KSP8598/8599 PNP EPITAXIAL SILICX N TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: VCeo = KSP8598: 60V KSP8599: 80V • C ollector Dissipation: P c max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage
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KSP8598/8599
KSP8598:
KSP8599:
625mW
KSP8598
KSP8599
-100nA,
BTS630
GDS5163
KSP8598
KSP8599
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T4 1060
Abstract: KS57C4004 sbr 1033 BSC23
Text: KS57C4004 4-BIT CMOS Microcontroller ELECTRONICS Ploduct specification OVERVIEW The KS57C4004 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an A/D converter, LED
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KS57C4004
KS57C4004
42-pin
44-pin
T4 1060
sbr 1033
BSC23
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Untitled
Abstract: No abstract text available
Text: Advance Information KM29V64001T/R FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase
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KM29V64001T/R
200us
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Untitled
Abstract: No abstract text available
Text: KM41V16000A/AL/ALL/ASL CMOSDRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tC A C tR C K M 41V 16000A /A L /A L L /A S L -6 60 ns 15 ns 110 ns K M 41V 16000A /A L /A L L /A S L -7 70 ns 20 ns 130 ns
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KM41V16000A/AL/ALL/ASL
6000A
41V16000A
150ns
b414S
24-LEAD
300MIL)
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRFR224/U224 FEATURES D -P A K • Low er R d s <o n • Improved inductive ruggedness » Fast sw itching tim es 2 • Rugged polysilicon gate cell structure « • Low er input cap acitance * •Extended sa fe operating area • Improved high tem perature reliability
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IRFR224/U224
IRFR224
IRFU224
Jb4142
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