23C4100-10
Abstract: 23C4100-12 23C4100-15 MX23C4100
Text: 23C4100 4M-BIT [512K x 8/256K x 16] MASK ROM FEATURES • Switchable organization - 512K x 8 byte mode - 256K x 16 (word mode) • Single +5V power supply • Fast access time:100/120/150ns • Totally static operation • • • • Completely TTL compatible
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Original
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MX23C4100
8/256K
100/120/150ns
100uA
MX23C4100
512Kx8
256Kx16
100/120/150/200ns.
PM0136
23C4100-10
23C4100-12
23C4100-15
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C4100 4M-BIT [512K x 8/256K x 16] MASK ROM FEATURES • Switchable organization - 512K x 8 byte mode - 256K x 16 (word mode) • Single +5V power supply • Fast access time:100/120/150ns • • • • • Totally static operation Completely TTL compatible
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Original
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MX23C4100
8/256K
100/120/150ns
100uA
MX23C4100
512Kx8
256Kx16
100/120/150/200ns.
JAN/29/1999
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C4100 4M-BIT [512K x 8/256K x 16] CMOS MASK ROM FEATURES • Switchable organization - 512K x 8 byte mode - 256K x 16 (word mode) • Single +5V power supply • Fast access time:100/120/150/200ns • • • • • Totally static operation Completely TTL compatible
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Original
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MX23C4100
8/256K
100/120/150/200ns
100uA
MX23C4100
512Kx8
256Kx16
100/120/150/200ns.
60ns--
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PDF
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23C4100-10
Abstract: 23C4100-12 23C4100-15 MX23C4100
Text: 23C4100 4M-BIT [512K x 8/256K x 16] CMOS MASK ROM FEATURES • Switchable organization - 512K x 8 byte mode - 256K x 16 (word mode) • Single +5V power supply • Fast access time:100/120/150/200ns • • • • • Totally static operation Completely TTL compatible
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Original
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MX23C4100
8/256K
100/120/150/200ns
100uA
MX23C4100
512Kx8
256Kx16
100/120/150/200ns.
PM0136
23C4100-10
23C4100-12
23C4100-15
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PDF
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MX23C4100
Abstract: 23C4100-10 23C4100-12 23C4100-15
Text: 23C4100 4M-BIT [512K x 8/256K x 16] MASK ROM FEATURES • Switchable organization - 512K x 8 byte mode - 256K x 16 (word mode) • Single +5V power supply • Fast access time:100/120/150ns • Totally static operation • • • • Completely TTL compatible
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Original
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MX23C4100
8/256K
100/120/150ns
100uA
MX23C4100
512Kx8
256Kx16
100/120/150/200ns.
JUN/19/2003
23C4100-10
23C4100-12
23C4100-15
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PDF
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MX23C4100
Abstract: 23C4100-20 23C4100-10 23C4100-12
Text: Introduction Selection Guide 23C4100 4M-BIT 512K x 8/256K x 16 CMOS MASK ROM FEATURES • • • • • Switchable configuration - 512K x 8(byte mode) - 256K x 16(word mode) • Single +5V power supply • Fast access time: 100/120/150/200ns • Totally static operation
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Original
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MX23C4100
8/256K
100/120/150/200ns
MX23C4100
A6-8887
CA95131
23C4100-20
23C4100-10
23C4100-12
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PDF
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MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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OCR Scan
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23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
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PDF
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Untitled
Abstract: No abstract text available
Text: GOLDSTAR T E C H N O L O G Y INC/ 4?E D • H D 2 Û 7 S ? 0 D D 3 b Q E t. ■ GoldStar_ mT-Vé-i3-IS 23C4100 512KX 8 /2 5 6 K x 16 BIT CMOS MASK ROM Description The GM 23C4100 high performance read only memory is organized either as 524,288 x 8 bit Byte
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OCR Scan
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GM23C4100
512KX
23C4100
0003t
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PDF
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23c2100
Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7
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OCR Scan
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KM41C4000-8
KM41C4000-10
KM41C4000L-8
KM41C4000L-10
KM41C4001-8
KM41C4001-10
KM41C4002-8
KM41C4002-10
KM41C4000A-7
KM41C4000A-8
23c2100
KM28C64-20
KM28C16-15
KM28C256J15
KM28C64-25
KM28C65-20
KM28C256-15
KM28C64A25
KM28C64J-20
KM28C64A-15
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PDF
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KM23C4100
Abstract: No abstract text available
Text: 23C4100 CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption
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OCR Scan
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KM23C4100
8/256K
150ns
40-pin
44-pin
KM23C4100
23C4100
KM23C4100)
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PDF
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Untitled
Abstract: No abstract text available
Text: S A MS UN G E L E C T R O N I C S INC 42E D E3 7=Jb4142 G O I U S M 5 SSMGK CMOS MASK ROM 23C4100A 4M-Bit 512Kx8/256Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte Mode: 524,288 x 8 W ord M ode: 26 2,14 4x16 • Fast access tim e : 120ns (m ax.)
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OCR Scan
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Jb4142
KM23C4100A
512Kx8/256Kx
120ns
40-pln
44-pin
23C4100A
0D111S7
23C4100A)
KM23C4100AFP1)
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PDF
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GM23C410
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM28C4100A high performance read only memory is organized as 524,288 x 8 bit Byte Mode or as 262,144 x 16 bit (Word Mode) followed by BHE mode select. The 23C4100A offers automatic power down controlled by
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OCR Scan
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GM28C4100A
GM23C4100A
4Q26757
0D47BS
GM23C410
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PDF
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Untitled
Abstract: No abstract text available
Text: lit t le MX23C41GO 4M-BITI51 2K x 8 /2 5 B K x IB ] CMOS MASK ROM FEATURES • Switchable configuration - 512K x 8 byte mode - 256K x 16(word mode) • Single +5V power supply • Fast access time: 100/120/150/200ns • Totally static operation • • •
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OCR Scan
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MX23C41GO
4M-BITI51
8/25B
100/120/150/200ns
MX23C4100
100/120/150/200ns.
23C4100-10
MXaSC4100
MX23C4100PC-10
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C4100H FP CMOS MASK ROM 4M-Bit (512K.X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (max.) • Supply voltage: single + 5V • Current consumption
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OCR Scan
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KM23C4100H
8/256K
100ns
100/iA
40-pin
44-pin
23C4100H)
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: KM23C41 OOD E T CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption
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OCR Scan
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KM23C41
512Kx8
/256Kx16)
23C4100D
44-TSQP2-400
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C4100H CMOS MASK ROM 4M-Bit 512K.X 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (m ax.) • Supply voltage: single + 5V • Current consumption
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OCR Scan
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KM23C4100H
8/256K
100ns
40-pin
44-pin
KM23C41OOH
23C4100H)
KM23C4100HFP1)
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PDF
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1136L
Abstract: No abstract text available
Text: KM23C41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption
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OCR Scan
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KM23C41
512Kx8
/256Kx16)
23C4100D
40-DIP-600
23C4100DG
40-SQP-525
40-DIP-600C
1136L
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C4100H CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,286 x 8 Word Mode: 26 2,1 4 4 x 1 6 • Fast access time: 100ns (max.) • Supply voltage: single + 5V • Current consumption
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OCR Scan
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KM23C4100H
512Kx
8/256K
100ns
40-pin
44-pin
23C4100H)
KM23C4100HFP1)
KM23C4100HFP2)
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C4100A CMOS MASK ROM 4M-Bit 512K.X 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption
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OCR Scan
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KM23C4100A
8/256K
120ns
40-pln
44-pin
23C4100A)
23C4100AFP1)
23C4100AFP2)
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PDF
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PE 8001A
Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1
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OCR Scan
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
PE 8001A
23C1001
23C1010
KM68512
km41c256
TFK 805
TFK 001
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PDF
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ic tl 0741
Abstract: tl 0741
Text: KM23C41 OOD E T CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption
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OCR Scan
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KM23C41
512Kx8
256Kx16)
23C4100D
44-TSQ
P2-400
44-TSOP2-400)
ic tl 0741
tl 0741
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C4100A CMOS MASK ROM 4M-Bit 512Kx8/256Kx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization T h e K M 2 3 C 4 1 0 0 A is a fu lly s ta tic m ask p ro g ra m m a b le ROM Byte M ode: 524,288 x 8 s ilic o n -g a te CMOS p ro c e s s
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OCR Scan
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KM23C4100A
512Kx8/256Kx16)
23C4100A)
KM23C4100AFP1)
23C4100A
23C4100AFP2)
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PDF
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KM23C4100B
Abstract: No abstract text available
Text: 23C4100B CMOS MASK ROM 4M-Bit 512Kx 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption
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OCR Scan
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KM23C4100B
512Kx
8/256K
120ns
50/iA
40-pin
44-pin
KM23C4100B
KM23C4100B)
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PDF
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b?E ]> SMGK 0017013 t û o CMOS MASK ROM 23C4100H FP 4M-Bit (512K x 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (max.)
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OCR Scan
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KM23C4100H
8/256K
100ns
40-pin
44-pin
0G17Qlb
KM23C4100H)
KM23C4100HFP)
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PDF
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