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Untitled Abstract: No abstract text available Text: SA MS UNG E L E C T R O N I C S INC 42E D Bi 0011103 1 BSflGK PRELIMINARY KM23C16000FP CMOS MASK ROM 16M-Bit 2M X8/1M X16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.)	OCR Scan	KM23C16000FP 16M-Bit 150ns 64-pln KM23C16000FP KM23C16000FP)	PDF
Untitled Abstract: No abstract text available Text: KM23C16000FP CMOS MASK ROM 16M-Bit 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.) • Supply Vbltage: single + 5V • Current consumption	OCR Scan	KM23C16000FP 16M-Bit 150ns 50ptA 64-pin KM23C16000FP)	PDF
23C16000F Abstract: No abstract text available Text: PRELIMINARY KM23C16000FP CMOS MASK ROM 16M-BH 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.) • Supply Vbltage: single + 5V	OCR Scan	KM23C16000FP 16M-BH 150ns 64-pin KM23C16000FP) 23C16000F	PDF
Untitled Abstract: No abstract text available Text: KM23C16000FP CMOS MASK ROM 16M-BH 2M X 8/1 M X 16 CMOS MASK ROM FEATURES S w itc h a b le o rg a n iz a tio n 2 ,0 9 7 ,1 5 2 x 8 (b y te m ode) 1 ,0 4 8 ,5 7 6 x 16 (w o rd m o d e ) F a s t a c c e s s tim e: 1 5 0 n s (m a x .) S u p p ly to lta g e : s in g le + 5 V	OCR Scan	KM23C16000FP 16M-BH KM23C16000FP)	PDF
23c2100 Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15 Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7	OCR Scan	KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15	PDF
toshiba 32k*8 sram Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464 Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258	OCR Scan	KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464	PDF
KM424C256Z Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J	OCR Scan	KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"	PDF
41C1000 Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258	OCR Scan	41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A	PDF
41C464 Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page	OCR Scan	41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100	PDF
K93C46 Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257	OCR Scan	416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256	PDF
TC55B8128 Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6	OCR Scan	TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256	PDF
KM28C64A Abstract: No abstract text available Text: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19	OCR Scan	KM75C03A. KM75C101A. KM75C102A. KM75C103A. KM75C104A. KM28C64A	PDF
KM424C256Z Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100	OCR Scan	KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ	PDF
KM41C1000BJ Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page	OCR Scan	KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z	PDF

KM23C1010 Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10	OCR Scan	KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 KM23C1010 KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ	PDF