hd12d
Abstract: 23C1600
Text: 23C16000A GoldStar 2M x8/lM x 16 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM 23C16000A high performance read only memory is organized either as 2 ,0 9 7 ,1 5 2 x 8 bit Byte Mode| or as 1,048,576 x 16 bit (Word Mode
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GM23C16000A
23C16000A
GM23C16000A
23C16000A
4D2fl757
hd12d
23C1600
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MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
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23c2100
Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7
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KM41C4000-8
KM41C4000-10
KM41C4000L-8
KM41C4000L-10
KM41C4001-8
KM41C4001-10
KM41C4002-8
KM41C4002-10
KM41C4000A-7
KM41C4000A-8
23c2100
KM28C64-20
KM28C16-15
KM28C256J15
KM28C64-25
KM28C65-20
KM28C256-15
KM28C64A25
KM28C64J-20
KM28C64A-15
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1M-WORD BY 16-BIT (WORD MODE) Description The ¿¡23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 w ords by 16 bits).
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16M-BIT
16-BIT
PD23C16000W
42-pin
44-pin
48-pin
44-pin
Activ6000WGX
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE /1 M-WORD BY 16-BIT (WORD MODE) Description The ¿¡23C16000W is a 16,777,216 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 2,097,152 w ords by 8 bits, W ORD mode: 1,048,576 w ords by 16 bits).
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16M-BIT
16-BIT
PD23C16000W
42-pin
44-pin
48-pin
44-pin
Act6000WGX
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23C16000F
Abstract: No abstract text available
Text: PRELIMINARY 23C16000FP CMOS MASK ROM 16M-BH 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.) • Supply Vbltage: single + 5V
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KM23C16000FP
16M-BH
150ns
64-pin
KM23C16000FP)
23C16000F
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23C8001A
Abstract: 23C8001 KM23C2001 2001h 23c4001
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28
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32000G
32000FP.
23C32100G
32100FP
23C8001A
23C8001
KM23C2001
2001h
23c4001
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Untitled
Abstract: No abstract text available
Text: 23C16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16{word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +SV • Current consumption
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KM23C
16000C
16M-Bit
/1Mx16)
100ns
23C16000C
44-T80P2-400
KM23C16000C(
152x8
576x16
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23C1600
Abstract: 23C16000
Text: 23C16000 CMOS MASK ROM 16M-Bit 2 M X 8 /1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 2 ,0 9 7 ,1 5 2 » 6 (b y te m ode) 1 ,0 4 8 ,5 7 6 x 16 (w o rd m o d e ) T h e K M 2 3 C 1 6 0 0 0 is a fu lly s ta tic m a sk p ro g ra m m a b le
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KM23C16000
16M-Bit
23C16000)
23C16000G)
23C1600
23C16000
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tl 0741
Abstract: ic tl 0741
Text: 23C16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access tim e : 100ns(M ax.) • Supply voltage : single +5V • Current consumption
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KM23C16000C
16M-Bit
/1Mx16)
100ns
16000C
44-TSQP2-400
23C16000C
152x8
576x16
44-TS
tl 0741
ic tl 0741
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7Tb414S ÜG170cia 534 »SPICK 23C16000 G CMOS MASK ROM 16M-Bit (2 M X 8/1M X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152x8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.)
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7Tb414S
G170c
KM23C16000
16M-Bit
152x8
150ns
42-pin,
44-pin,
23C16
KM23C
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23C16000
Abstract: S47AA 23C1600 KM23C16000
Text: PRELIMINARY 23C16000 CMOS MASK ROM 1 6 M -B it 2 M X 8 / 1M X 16 C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Sw itchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access tim e: 150ns (max.) • Supply voltage: single + 5V
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KM23C16000
150ns
50fjA
42-pin,
44-pin,
KM23C16000)
KM23C16000G)
23C16000
S47AA
23C1600
KM23C16000
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KM23C1010
Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ
Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10
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KM41C4000-8
KM41C4000-10
KM41C4000L-8
KM41C4000L-10
KM41C4001-8
KM41C4001-10
KM41C4002-8
KM41C4002-10
KM41C4000A-7
KM41C4000A-8
KM23C1010
KM23C512
KM44C1000
KM44C1002
KM23C2001
23c16000
KM75C01AP
KM416C256-7
KM41C4000A
KM75C01AJ
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48TSOP1
Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15
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512KX8
KM23C400QD
KM23C4QOOD
KM23C4Q00D
KM23C40QQD
TY-10
KM23C4000D
7Y-12
KM23V4000D
48TSOP1
MX* 64M-Bit eprom
TY15
km23c32000cg-10
23v322
KM23C16205BSG-10
7Y12
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