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    Samsung Semiconductor K9F1G08U0D-SCB0

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    K9F1G08U0 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K9F1G08U0A Samsung Electronics FLASH MEMORY Original PDF
    K9F1G08U0M Samsung Electronics 1Gb Gb 1.8V NAND Flash Errata Original PDF
    K9F1G08U0M-FCB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-FIB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-PCB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-PIB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-VCB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-VIB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-YCB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF
    K9F1G08U0M-YIB0 Samsung Electronics 128M x 8 bit NAND flash memory, 2.7 - 3.6V Original PDF

    K9F1G08U0 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 samsung 2GB X16 Nand flash SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability PDF

    K9F1G08U0A-PCB0

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)


    Original     		K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns K9F1G08U0A-PCB0 PDF

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report PDF

    K9F1G08U0C

    Abstract: K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08B0C K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report
    Text: Advance FLASH MEMORY K9F1G08B0C K9F1G08U0C K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F1G08B0C K9F1G08U0C K9F1G08X0C K9F1G08U0C K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report PDF

    K9F1G08D0M

    Abstract: K9F1G08U0M K9F1G08Q0M K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M K9F1G16U0M-PCB0
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M K9F1G16U0M-PCB0 PDF

    Untitled

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 PDF

    K9F1G08U0AYCB0

    Abstract: K9F1G08U0A K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08
    Text: K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)


    Original     		K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns 200mV K9F1G08U0AYCB0 K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)


    Original     		K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns PDF

    K9F1G08Q0A

    Abstract: No abstract text available
    Text: K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle


    Original     		K9F1G08Q0A K9F1G08U0A 100ns PDF

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History History Draft Date Remark 0.0 1. Initial issue July. 5. 2001


    Original     		K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report PDF

    K9F1G08D0M

    Abstract: K9F1G08 K9F1G08Q0M K9F1G08Q0M-PCB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M K9F1G08 K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M PDF

    K9F1G08U0AYCB0

    Abstract: K9F1G08X0A-XIB0 K9F1G08U0A SAMSUNG MCP K9F1G08U0A-PCB0 K9F1G08U0A-YCB0 K9F1G08U0A-Y K9F1G08Q0A K9F1G08U0A-VIB0 Samsung K9F1G08U0A
    Text: K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle


    Original     		K9F1G08Q0A K9F1G08U0A 100ns K9F1G08U0AYCB0 K9F1G08X0A-XIB0 K9F1G08U0A SAMSUNG MCP K9F1G08U0A-PCB0 K9F1G08U0A-YCB0 K9F1G08U0A-Y K9F1G08Q0A K9F1G08U0A-VIB0 Samsung K9F1G08U0A PDF

    K9F1G08U0

    Abstract: K9F1G08U0M-FCB0 K9F1G08Q0M-Y K9F1G08 K9F1G08X0M K9F1G08U0M-Y 27X16 K9F1G08Q0M-PCB0 K9F1G08U0M-PCB0 K9F1G08U
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M K9F1G08U0 K9F1G08U0M-FCB0 K9F1G08Q0M-Y K9F1G08 K9F1G08X0M K9F1G08U0M-Y 27X16 K9F1G08Q0M-PCB0 K9F1G08U0M-PCB0 K9F1G08U PDF

    k9f1g08u0d

    Abstract: K9F1G08U0D-SCB0 K9F1G08u0c k9f1g08u0d-sib0 K9F1G08U0D-HCB0 K9F1G08U0DSCB0 k9g1g08 K9F1G08U0D-SIB SAMSUNG K9F1G08U0C NAND Flash Qualification Report
    Text: Rev. 0.1, May. 2010 K9F1G08U0D Advance 1Gb NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K9F1G08U0D K9F1G08U0C 200us 700us 250us 750us k9f1g08u0d K9F1G08U0D-SCB0 K9F1G08u0c k9f1g08u0d-sib0 K9F1G08U0D-HCB0 K9F1G08U0DSCB0 k9g1g08 K9F1G08U0D-SIB SAMSUNG K9F1G08U0C NAND Flash Qualification Report PDF

    K9F1G08U0A-PCB0

    Abstract: K9F1G08U0A K9F1G08X0A K9F1G08R0A K9F1G08R0A-J Samsung K9F1G08U0A K9F1G08 K9F1G08U0A-FIB0 K9F1G08U0AP FBGA 63
    Text: K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY K9F1G08X0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F1G08R0A K9F1G08U0A K9K2G08U1A K9F1G08X0A 200mV K9F1G08U0A-PCB0 K9F1G08X0A K9F1G08R0A K9F1G08R0A-J Samsung K9F1G08U0A K9F1G08 K9F1G08U0A-FIB0 K9F1G08U0AP FBGA 63 PDF

    K9F1G08U0D-SCB0

    Abstract: K9F1G08U0D K9F1G08U0C K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D
    Text: FLASH MEMORY K9F1G08U0D K9F1G08U0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F1G08U0D K9F1G08U0C 200us 700us K9F1G08U0D 250us 750us K9F1G08U0D-SCB0 K9F1G08U0D-SCB K9F1G08U0D-S SAMSUNG K9F1G08U0D K9F1G08U0D-HCB0 K9F1G08U0D-H K9F1G08X0D-SCB0 K9F1G08X0D PDF

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: samsung 2GB X16 Nand flash samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report LA14
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X16 Nand flash samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report LA14 PDF

    K9F1G08U0B-PCB0

    Abstract: K9F1G08U0B K9F1G08U0B-P SAMSUNG 4gb NAND Flash Qualification Report K9F1G08U0B-PCB0 datasheet K9F1G08U0b-pcb K9F1G08U0B-XCB0 K9F1G08U0BPCB0 k9f1g08u0b-s k9f1g08u0b-xib0
    Text: FLASH MEMORY K9F1G08U0B K9XXG08UXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K9F1G08U0B K9XXG08UXB K9F1G08U0B-PCB0 K9F1G08U0B K9F1G08U0B-P SAMSUNG 4gb NAND Flash Qualification Report K9F1G08U0B-PCB0 datasheet K9F1G08U0b-pcb K9F1G08U0B-XCB0 K9F1G08U0BPCB0 k9f1g08u0b-s k9f1g08u0b-xib0 PDF

    Untitled

    Abstract: No abstract text available
    Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.


    Original     		K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    iCreate Technologies

    Abstract: i5127-L icreate marking W17 FD13 330ohm resistor K9F1G08U0M FD10FD9 i5127
    Text: Create i5127-L i5127-L High-Speed USB Flash Disk Controller Data Sheet Version 0.90 Preliminary iCreate Technologies Corporation Release date: 2007/07/16 2007 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.


    Original     		i5127-L iCreate Technologies i5127-L icreate marking W17 FD13 330ohm resistor K9F1G08U0M FD10FD9 i5127 PDF

    sandisk eMMC 4.41

    Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
    Text: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009


    Original     		IMX25RMAD. MX251 MCIMX251) MX253 MCIMX253) MX255 MCIMX255) MX257 MCIMX257) MX258 sandisk eMMC 4.41 toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc PDF

    Untitled

    Abstract: No abstract text available
    Text: Cre a t e i5127-L i5127-L High-Speed USB Flash Disk Controller Data Sheet Version 0.90 Preliminary iCreate Technologies Corporation Release date: 2007/07/16 2007 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.


    Original     		i5127-L PDF

    32 inch TV samsung lcd Schematic

    Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A


    Original     		965PM BA41-0071 BA41-00717A BA41-00718A TP18631 TP18634 TP18650 TP18635 TP18636 32 inch TV samsung lcd Schematic U574 27b1 diode AP4435 22B2 DIODE 58c3 SLB9635TT1.2 PDF