48-pin TSOP
Abstract: K9K2G08U0M 48-pin TSOP (I) flash memory K9K2G08U0M-YCB0 samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G08Q0M-YCB0 K9K2G16Q0M-Y K9K2G16Q0M-YCB0
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001
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K9K2G08Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16Q0M-YCB0
K9K2G16U0M-YCB0
48-pin TSOP
K9K2G08U0M
48-pin TSOP (I) flash memory
samsung 1Gb nand flash
SAMSUNG 4gb NAND Flash Qualification Report
K9K2G08Q0M-Y
K9K2G16Q0M-Y
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samsung 2GB X16 Nand flash
Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9F1G08Q0M-YCB0
K9F1G08U0M-YCB0
K9F1G16Q0M-YCB0
K9F1G16U0M-YCB0
K9F1G08U0M-VCB0
samsung 2GB X16 Nand flash
SAMSUNG 4gb NAND Flash Qualification Report
samsung 2GB X8 Nand flash
SAMSUNG NAND Flash Qualification Report
SAMSUNG 128Mb NAND Flash Qualification Reliability
SAMSUNG 256Mb NAND Flash Qualification Reliability
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K9F1G08U0A-PCB0
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
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K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
K9F1G08U0A-PCB0
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SAMSUNG 4gb NAND Flash Qualification Report
Abstract: No abstract text available
Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9F1G08Q0M-YCB0
K9F1G08U0M-YCB0
K9F1G16Q0M-YCB0
K9F1G16U0M-YCB0
K9F1G08U0M-VCB0
SAMSUNG 4gb NAND Flash Qualification Report
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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K9K2G08U0A
K9K2G08U0A-Y
K9K2G08U0A-V
K9K2G08U0A
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nand flash 512M
Abstract: K5D1G K5D1G13KCM-D075 4Mx32x4banks SAMSUNG MCP 14X14mm K5D1G13 SAMSUNG 512Mb NAND Flash Qualification Report
Text: Target MCP MEMORY K5D1G13KCM-D075 MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K5D1G13KCM-D075
512Mb
119-Ball
nand flash 512M
K5D1G
K5D1G13KCM-D075
4Mx32x4banks
SAMSUNG MCP
14X14mm
K5D1G13
SAMSUNG 512Mb NAND Flash Qualification Report
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K9F2G08U0M-PCB0
Abstract: 512M x 8 Bit NAND Flash Memory K9F2G08U0M K9F2G08U0M-XIB0 K9F2G08U0M-YCB0 48-pin TSOP (I) flash memory K9F2G08U0 SAMSUNG NAND Flash Qualification Report samsung toggle mode NAND K9K4G08U1M
Text: K9K4G08U1M K9F2G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9K4G08U1M
K9F2G08U0M
K9XXG08UXM
200mV
K9F2G08U0M-PCB0
512M x 8 Bit NAND Flash Memory
K9F2G08U0M
K9F2G08U0M-XIB0
K9F2G08U0M-YCB0
48-pin TSOP (I) flash memory
K9F2G08U0
SAMSUNG NAND Flash Qualification Report
samsung toggle mode NAND
K9K4G08U1M
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K9F2G08X0M
Abstract: K9F2G08U0M-PCB0 K9F2G08Q0M K9F2G08Q0M-PCB0 K9F2G08U0M K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y K9F2G16U0M-Y K9F2G16U0M-Y application
Text: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device Page 34
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K9F2G08Q0M
K9F2G16Q0M
K9F2G08U0M
K9F2G16U0M
K9F2G08Q0M
K9F2G08U0M
K9F2G08X0M
K9F2G08U0M-PCB0
K9F2G08Q0M-PCB0
K9F2G16Q0M
K9F2G16U0M
K9F2G08Q0M-Y
K9F2G16U0M-Y
K9F2G16U0M-Y application
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nand hamming code 2k bytes
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34
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K9K4G08U1M
K9F2G08U0M
K9F2G16U0M
9F2G08U0M
nand hamming code 2k bytes
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Untitled
Abstract: No abstract text available
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 30.2001
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K9K2G08Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16Q0M-YCB0
K9K2G16U0M-YCB0
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K9F2G08U0M-YCB0
Abstract: No abstract text available
Text: K9F2G08Q0M-YCB0,YIB0 K9F2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9F2G16Q0M-YCB0,YIB0 K9F2G16U0M-YCB0,YIB0 Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001
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K9F2G08Q0M-YCB0
K9F2G08U0M-YCB0
K9F2G16Q0M-YCB0
K9F2G16U0M-YCB0
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue May. 31. 2004 Advance 0.1 1. Technical note is changed 2. Notes of AC timing characteristics are added
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K9K2G08U0A
K9K2G08U0A
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HT66F004
Abstract: HT48R002 HT66F002 HT16K33 HT46R002 HT12F application circuit HT66F018 HT46R004 HT46R0042 HT46R066B
Text: Holtek Company Introduction Introduction Unrelenting growth and the release of a continuous stream of competitive and functionally rich new semiconductor devices onto the global market has been the hallmark of Holtek Semiconductor since the establishment of the company back in 1983 to the present
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32-bit
HT95R24.
HT95R25.
HT95R33.
HT95R34.
HT95R35.
HT98R068-1.
HT9B92.
HT9B92G.
HT9B95.
HT66F004
HT48R002
HT66F002
HT16K33
HT46R002
HT12F application circuit
HT66F018
HT46R004
HT46R0042
HT46R066B
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SAMSUNG 4gb NAND Flash Qualification Report
Abstract: Samsung K9W8G08U1M K9K4G08U0M-YCB0 K9K4G08U0M-PCB0 K9W8G08U1M K9W8G08U1M-PCB0 May-31 1220AF K9K4G08U0M 48-pin TSOP
Text: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003
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K9W8G08U1M
K9K4G08U0M
K9W8G16U1M-YCB0
K9K4G08Q0M-PCB0
K9K4G08U0M-PCB0
K9K4G16U0M-PCBess
200mV
SAMSUNG 4gb NAND Flash Qualification Report
Samsung K9W8G08U1M
K9K4G08U0M-YCB0
K9W8G08U1M
K9W8G08U1M-PCB0
May-31
1220AF
K9K4G08U0M
48-pin TSOP
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K9F1G08D0M
Abstract: K9F1G08U0M K9F1G08Q0M K9F1G08Q0M-PCB0 K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M K9F1G16U0M-PCB0
Text: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.
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K9F1G08Q0M
K9F1G16Q0M
K9F1G08D0M
K9F1G16D0M
K9F1G08U0M
K9F1G16U0M
K9F1G08Q0M-PCB0
K9F1G08U0M-FCB0
K9F1G08U0M-PCB0
K9F1G16D0M
K9F1G16Q0M
K9F1G16U0M
K9F1G16U0M-PCB0
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Untitled
Abstract: No abstract text available
Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9F1G08Q0M-YCB0
K9F1G08U0M-YCB0
K9F1G16Q0M-YCB0
K9F1G16U0M-YCB0
K9F1G08U0M-VCB0
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512M x 8 Bit NAND Flash Memory
Abstract: K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0
Text: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34
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K9K4G08U1M
K9F2G08U0M
K9F2G16U0M
512M x 8 Bit NAND Flash Memory
K9F2G16U0M
K9F2G08U0M-PCB0
samsung toggle mode NAND
Serial NAND
K9K4G08U1M
K9F2G08Q0M-PCB0
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K9K2G08U0A-FIB0
Abstract: K9K2G08U0A-VIB0 48-PIN K9K2G08U0A
Text: Preliminary FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue May. 31. 2004 Advance 0.1 1. Technical note is changed 2. Notes of AC timing characteristics are added
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K9K2G08U0A
K9K2G08U0A-FIB0
K9K2G08U0A-VIB0
48-PIN
K9K2G08U0A
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K9F1G08U0AYCB0
Abstract: K9F1G08U0A K9F1G08X0A-XIB0 1g nand mcp K9F1G08U0A-PCB0 2112x8 K9F1G08R0A SAMSUNG MCP K9F1G08X0A K9F1G08
Text: K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
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K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
200mV
K9F1G08U0AYCB0
K9F1G08X0A-XIB0
1g nand mcp
K9F1G08U0A-PCB0
2112x8
K9F1G08R0A
SAMSUNG MCP
K9F1G08X0A
K9F1G08
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
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K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
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K9K4G08U0M-XIB0
Abstract: K9W8G08U1M-YCB0 48pin-TSOP1 K9K4G08U0M-XCB0 K9K4G08U0M-PCB0 K9K4G08U0M
Text: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003
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K9W8G08U1M
K9K4G08U0M
K9W8G16U1M-YCB0
K9K4G08Q0M-PCB0
K9K4G08U0M-PCB0
K9K4G16U0M-PCB0
K9K4G16Q0M-PCB0
K9W8G08U1M-PCB0
K9K4G08U0M-XIB0
K9W8G08U1M-YCB0
48pin-TSOP1
K9K4G08U0M-XCB0
K9K4G08U0M
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K9K4G08U0M-YCB0
Abstract: K9K4G16U0M-YCB0 K9K4G16Q0M-YCB0 K9K4G08Q0M-YCB0 K9K4G08U0M
Text: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003
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K9K4G08Q0M-YCB0
K9K4G16Q0M-YCB0
K9K4G08U0M-YCB0
K9K4G16U0M-YCB0
K9K4G08U0M
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Untitled
Abstract: No abstract text available
Text: Semiconductor CDP68HC05J3 8-Bit Microcontroller Series September 1998 Features Description The following are some of the hardware and software highlights of the CDP68HC05J3 family of HCMOS Microcomputers. The CDP68HC05J3 HCMOS Microcomputer is a member of
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OCR Scan
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CDP68HC05J3
CDP68HC05J3
CDP68HC05
16-bit
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Untitled
Abstract: No abstract text available
Text: S ttftSESS CDP68HC05J3 8-Bit Microcontroller Series August 1997 Features Description The following are some of the hardware and software highlights of the CDP68HC05J3 family of HCMOS Microcomputers. The CDP68HC05J3 HCMOS Microcomputer is a member of the CDP68HC05 family of single chip microcomputers. This 8bit microcomputer unit MCU contains a CPU, 128 bytes of
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OCR Scan
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CDP68HC05J3
CDP68HC05J3
CDP68HC05
16-bit
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