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    Samsung Semiconductor K6X8008T2BTF55

    1 M X 8 BIT LOW POWER AND LOW VOLTAGE CMOS STATIC RAM Standard SRAM, 1MX8, 55ns, CMOS, PDSO44
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    ComSIT USA K6X8008T2BTF55 58
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    Samsung Electronics Co. Ltd K6X8008T2BUF55

    1 M X 8 BIT LOW POWER AND LOW VOLTAGE CMOS STATIC RAM Standard SRAM, 1MX8, 55ns, CMOS, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA K6X8008T2BUF55 28
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    K6X8008T2B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K6X8008T2B Samsung Electronics CMOS SRAM Original PDF
    K6X8008T2B-F Samsung Electronics CMOS SRAM Original PDF
    K6X8008T2B-Q Samsung Electronics CMOS SRAM Original PDF
    K6X8008T2B-TF55 Samsung Electronics 1M x 8 Bit Low Power and Low Voltage Full CMOS Static RAM Original PDF

    K6X8008T2B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6X8008T2B-uf55

    Abstract: K6X8008T2BUF55 K6X8008T2B-TF55 K6X8008T2B K6X8008T2B-F K6X8008T2B-Q K6X8008T2B-U
    Text: K6X8008T2B Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002


    Original     		PDF K6X8008T2B 44-TSOP2-400R K6X8008T2B-uf55 K6X8008T2BUF55 K6X8008T2B-TF55 K6X8008T2B-F K6X8008T2B-Q K6X8008T2B-U

    K6X8008T2B-TF55

    Abstract: cmos static ram 1mx8 5v K6X8008T2B K6X8008T2B-F K6X8008T2B-Q
    Text: K6X8008T2B Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002


    Original     		PDF K6X8008T2B 44-TSOP2-400R K6X8008T2B-TF55 cmos static ram 1mx8 5v K6X8008T2B-F K6X8008T2B-Q

    K6X8008T2B-TF55

    Abstract: K6X8008T2B-TF70 K6X8008T2B K6X8008T2B-F K6X8008T2B-Q
    Text: Preliminary CMOS SRAM K6X8008T2B Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial draft October 31, 2002 0.1 Revised - Deleted 44-TSOP2-400R package type.


    Original     		PDF K6X8008T2B 44-TSOP2-400R K6X8008T2B-TF55 K6X8008T2B-TF70 K6X8008T2B-F K6X8008T2B-Q

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    K6X8016T3B-UF55

    Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
    Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm


    Original     		PDF AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    Untitled

    Abstract: No abstract text available
    Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their


    Original     		PDF AN1012

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety