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    MK48T12 Price and Stock

    STMicroelectronics MK48T12B-20

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MK48T12B-20 134 1
    • 1 $29.25
    • 10 $29.25
    • 100 $24.7513
    • 1000 $23.985
    • 10000 $23.985
    Buy Now

    STMicroelectronics MK48T12B-25

    Real Time Clock, Non-Volatile, 24 Pin, Plastic, DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MK48T12B-25 17
    • 1 $59.371
    • 10 $57.0875
    • 100 $57.0875
    • 1000 $57.0875
    • 10000 $57.0875
    Buy Now

    STMicroelectronics MK48T12B20

    REAL TIME CLOCK, NON-VOLATILE, 0 TIMER(S), CMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MK48T12B20 107
    • 1 $31.6875
    • 10 $31.6875
    • 100 $28.0313
    • 1000 $28.0313
    • 10000 $28.0313
    Buy Now

    MK48T12 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MK48T12 STMicroelectronics CMOS 2K x 8 TIMEKEEPER SRAM Scan PDF
    MK48T12-12 Mostek 2K x 8 Zeropower Timekeeper RAM Original PDF
    MK48T12-12 Mostek 2K x 8 ZEROPOWER ITIMEKEEPER RAM Scan PDF
    MK48T12-15 Mostek 2K x 8 Zeropower Timekeeper RAM Original PDF
    MK48T12-15 Mostek 2K x 8 ZEROPOWER ITIMEKEEPER RAM Scan PDF
    MK48T12-20 Mostek 2K x 8 Zeropower Timekeeper RAM Original PDF
    MK48T12-20 Mostek 2K x 8 ZEROPOWER ITIMEKEEPER RAM Scan PDF
    MK48T12-25 Mostek 2K x 8 Zeropower Timekeeper RAM Original PDF
    MK48T12-25 Mostek 2K x 8 ZEROPOWER ITIMEKEEPER RAM Scan PDF
    MK48T12B-12 Mostek 2K x 8 Zeropower Timekeeper RAM Original PDF
    MK48T12B-12 Mostek 2K x 8 ZEROPOWER ITIMEKEEPER RAM Scan PDF
    MK48T12B12 STMicroelectronics CMOS 2K x 8 TIMEKEEPER SRAM Scan PDF
    MK48T12B-12 STMicroelectronics CMOS 2K x 8 timekeeper SRAM, 120ns Scan PDF
    MK48T12B-15 Mostek 2K x 8 Zeropower Timekeeper RAM Original PDF
    MK48T12B-15 Mostek 2K x 8 ZEROPOWER ITIMEKEEPER RAM Scan PDF
    MK48T12B15 STMicroelectronics CMOS 2K x 8 TIMEKEEPER SRAM Scan PDF
    MK48T12B-15 STMicroelectronics CMOS 2K x 8 timekeeper SRAM, 150ns Scan PDF
    MK48T12B-20 Mostek 2K x 8 Zeropower Timekeeper RAM Original PDF
    MK48T12B-20 Mostek 2K x 8 ZEROPOWER ITIMEKEEPER RAM Scan PDF
    MK48T12B20 STMicroelectronics CMOS 2K x 8 TIMEKEEPER SRAM Scan PDF

    MK48T12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MK48T128

    Abstract: IM1646 DS1646 IM1646-12 MK48T12 BCD 2000 power volts diagram
    Text: INNOVATIVE IM1646 Nonvolatile Timekeeping RAM Features: Form, fit and function compatible with the MK48T128 and DS1646 Timekeeping RAM. Integrated NV SRAM, real time clock, crystal, power fail control circuit and lithium energy source. Standard JEDEC bytewide 128K X 8 static RAM


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    PDF IM1646 MK48T128 DS1646 IM1646 IM1646-12 MK48T12 BCD 2000 power volts diagram

    MK48T08

    Abstract: MK48T18 AN934 MK48T m48t35 M48T02 M48T12 M48T86 MK48T02 MK48T12
    Text: AN934 APPLICATION NOTE TIMEKEEPER Calibration The term “quartz accurate” has become a familiar phrase used to describe the accuracy of many time keeping functions. Quartz oscillators provide an accuracy far superior to other conventional oscillator designs, but they are not perfect. Quartz crystals are sensitive to temperature variations. Figure 1 shows the


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    PDF AN934 MK48T08 MK48T18 AN934 MK48T m48t35 M48T02 M48T12 M48T86 MK48T02 MK48T12

    TEA7052DP

    Abstract: ls285ab TEA7531DP 7532DP M3541B LS285AB1 LS588N TEA7063DP LS256B pnp for 2n3019
    Text: TELEPHONE SET RECOMMENDED PRODUCTS FROM SGS-THOMSON SPEECH CIRCUITS Type Number L3280AB LS256B PROTECTION Description Very low voltage telephone speech circuit Telephone speech circuit with multifrequency interface Telephone speech circuit Programmable telephone speech circuit


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    PDF L3280AB LS256B LS285AB1 LS588N1 LS656AB TEA7052DP TEA7063DP L3100B1 LS5120B LS5060B ls285ab TEA7531DP 7532DP M3541B LS588N pnp for 2n3019

    MK48T08

    Abstract: MK48T18 AN934 m48t08 m48t35 MK48T MK48T12 M48T02 M48T12 M48T86
    Text: AN934 APPLICATION NOTE TIMEKEEPER Calibration The term “quartz accurate” has become a familiar phrase used to describe the accuracy of many time keeping functions. Quartz oscillators provide an accuracy far superior to other conventional oscillator designs, but they are not perfect. Quartz crystals are sensitive to temperature variations. Figure 1 shows the


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    PDF AN934 MK48T08 MK48T18 AN934 m48t08 m48t35 MK48T MK48T12 M48T02 M48T12 M48T86

    Untitled

    Abstract: No abstract text available
    Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their


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    PDF AN1012

    MB81C68

    Abstract: TMS27256 nmc27c640 free transistor equivalent book 2sc Zeropower ram MK48Z ET27160 200 watt Regulated dc Power Supply Schematic Diag itt capacitor ady10 m2764a-2fl
    Text: MEMORY PRODUCTS DATABOOK 1st EDITION JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON' PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEM WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF SGS-THOMSON


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    PDF Z8000 MB81C68 TMS27256 nmc27c640 free transistor equivalent book 2sc Zeropower ram MK48Z ET27160 200 watt Regulated dc Power Supply Schematic Diag itt capacitor ady10 m2764a-2fl

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    PDF AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    PDF AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02

    BR1632 safety

    Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    PDF AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    PDF AN1012 br1632 br1225

    48T02

    Abstract: No abstract text available
    Text: r Z Z SGS-THOMSON MK48T02 MK48T12 MiOœtittJig «! CMOS 2K X 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIM E CLOCK, CRYSTAL, POWER-FAIL CO NTRO L C IRCUIT AND BATTERY. ■ BYTEW IDE RAM-LIKE CLO CK ACCESS. ■ BCD C O D E D YEAR , M O NTH, DAY, DATE,


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    PDF MK48T02 MK48T12 MK48T12 MK48T02/12 X/10J16 XAND15) PHDIP24 120ns 48T02

    hst 1025

    Abstract: MK48T02 PHDIP24 6116 ram 2k 48t02 H99XXYYZZ 1032 TCEA MK48T12 "binary to bcd"
    Text: 52E D • 7 ‘1ECJB37 DD3flS0M 74T ■ S 6 T H Z, MK48T02 MK48T12 SGS-THOMSON ilLHOT *! S G S-THOMSON CMOS 2K x 8 TIMEKEEPER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS.


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    PDF MK48T02 MK48T12 MK48T02 MK48T12 MK48T02resents XAND15) PHDIP24 150ns 200ns hst 1025 PHDIP24 6116 ram 2k 48t02 H99XXYYZZ 1032 TCEA "binary to bcd"

    VR00084

    Abstract: No abstract text available
    Text: FZ 7 SCS-THOMSON MK48T02 MK48T12 [*[i?m iOT «S CMOS 2K X 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS. ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES AND SECONDS.


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    PDF MK48T12 MK48T02/12 XAND15) MK48T02 PHDIP24 120ns 150ns 200ns 250ns VR00084

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    MKB6116

    Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
    Text: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250


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    PDF 32KX8 MK48Z32 MK48Z30A MK48Z30 MK48Z19BU MK46Z19 MK48Z09BU MK48Z02 MK48Z02BU MK48Z12 MKB6116 MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420

    MK48TO2

    Abstract: No abstract text available
    Text: 7^2^237 0027^43 1 2- SGS-THOMSON MK48T02/12(B -12/15/20/25 iy S G S-TH0MS0N 3DE » 2K X 8 ZEROPOWEFT/TIMEKEEPER RAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY BYTEWIDE™ RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE,


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    PDF MK48T02/12 AVAI15 MK48T MK48TO2

    MK48T02

    Abstract: No abstract text available
    Text: f Z 7 S C S -T H O M S O N Ä 7# M K 48T02 M K48T12 CMOS 2K X 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS. ■ BCD CODED YEAR, MONTH, DAY, DATE,


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    PDF 48T02 K48T12 PHDIP24 MK48T02 XAND15) MK48T02 PHDIP24 120ns 150ns 200ns

    Untitled

    Abstract: No abstract text available
    Text: •THOMSON Û 7 D D I 7 =1 2 ^ 3 7 DDlGSfll H =W = ; ^ :- Z É R g l? Q W Ë > ^ { M Ë ^ e e É liJ [B A M FEATURES □ Integrated Ultra Low Power SRAM, Real Time Clock, Crystal, Power-fail Control Circuit and Battery 1 c □ 24 Vcc 2 C 3 23 *8 A5 3 C □ 22


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    PDF MK48T02/12) MK48T03/13) MK48T

    MK48T

    Abstract: 6116 ram 2k using two 6116 RAM
    Text: M K 4 8 T 0 2 / 1 2 / 0 3 / 1 3 B 12/15/20/2 5 2K 8 ZERO PO W ER /T IM E K E E P E R RAM MEMORY COM PONENTS S' FEATURES □ Integrated Ultra Low Power SRAM , Real Tim e Clock, Crystal, Power-fail Control C ircu it and Battery □ BYTEW IDE R AM -like C lock Access


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    PDF MK48T02/12/03/13 MK48T02/12) MK48T03/13) MK48T02/03: MK48T 6116 ram 2k using two 6116 RAM

    48t02

    Abstract: mostek shift register 6116 EEPROM 28 PINS
    Text: 2K 8 ZERO PO W ER /T IM E K E E P E R RAM MEMORY CO M PO NENTS FEATURES □ Integrated Ultra Low Power SRAM, Real Time Clock, Crystal, Power-tall Control Circuit and Battery 1 c □ 24 A 6 2 C □ 23 *5 3 C □ 22 □ BCD Coded Year, Month, Day, Date, Hours, Minutes


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    PDF MK48T02/12/03/13 MK48T02/12) MK48T03/13) MK48T 48t02 mostek shift register 6116 EEPROM 28 PINS

    MK48TO2

    Abstract: MK48TO2-12 MK48T12
    Text: { 7 Z S C S - T H O M S O M K48T02/12 B -12/15/20/25 N # „ RiflDeOOHILKgTMROOgi 2K x 8 ZEROPQWEfy*/TIMEKEEPER RAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY ■ BYTEWIDE” RAM-LIKE CLOCK ACCESS


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    PDF K48T02/12 MK40TO2 MK48T12 MK48T MK48TO2 MK48TO2-12

    MK45H14

    Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
    Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .


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    PDF M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA

    MK48TO2-12

    Abstract: SRAM 6116 kick circuit drain mk48to MK48T12 MK48TO2 MK48T02 mostek 80 byte shift register 6116 sram
    Text: IffiEEHSEll COMPONENTS MK48T02/12 B -12/15/20/25 yr~i 2K X 8 Z E R O P O W E R TIM E K E E P E R RAM MEMORY COMPONENTS FEATURES □ Integrated U ltra Low Power SR AM , Real Tim e Clock, Crystal, Power-fail C ontrol C ircu it and B attery A7 1 c 3 24 Vcc A.


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    PDF MK48T02/12 MK48T02: MK48T12: MK48TX2-12rmation MK48TO2-12 SRAM 6116 kick circuit drain mk48to MK48T12 MK48TO2 MK48T02 mostek 80 byte shift register 6116 sram

    MK48T08

    Abstract: mk48t18 MK48Z08 MKI48Z12 MK48Z09 MK48T12
    Text: / = 7 SGS-THOMSON ^7# APPLICATION NOTE [fôôD g^ [lL[l©Tr[S(ô RÎ]0©i ENSURING DATA INTEGRITY IN ZEROPOWER AND TIMEKEEPER RAMs The ZEROPOWER and TIMEKEEPER™ product families offer a unique non-volatile RAM solution. ZEROPOWER products consist of a single chip


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