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    AN1012 Price and Stock

    Pasternack Enterprises PEWAN1012

    WR-15 Waveguide Standard Gain Ho
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    DigiKey PEWAN1012
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    Pasternack Enterprises US PEWAN1012 1
    • 1 $885.72
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    Fairview Microwave Inc FMWAN1012

    Standard Gain Horn Waveguide Antenna, Wr-15, 50 Ghz To 75 Ghz, Ug-385/U-Mod Round Cover Flange, 25 Dbi Nominal Gain Rohs Compliant: Yes |Fairview Microwave FMWAN1012
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    Newark FMWAN1012 Bulk 1 1
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    RS FMWAN1012 Bulk 3 Weeks 1
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    Protective Industrial Products 250-AN-10125

    Anser, Slv Mir Lens, AS, Blk Frm, Rubber Tmpl Tips, Incl Neck Cord | Protective Industrial Products 250-AN-10125
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    RS 250-AN-10125 Bulk 12
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    Protective Industrial Products 250-AN-10128

    Anser, Slv Mir Lens, AS/AF, Camo Frm Rubber Tmpl Tips, Incl Neck Cord | Protective Industrial Products 250-AN-10128
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    RS 250-AN-10128 Bulk 12
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    Protective Industrial Products 250-AN-10121

    Anser, Brown Lens, Camo Frm, Rubber Tmpl Tips, Incl Neck Cord | Protective Industrial Products 250-AN-10121
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    RS 250-AN-10121 Bulk 12
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    AN1012 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AN-1012 Fairchild Semiconductor AN-1012 SPI Versus Microwire EEPROM Comparison Original PDF
    AN1012 STMicroelectronics PREDICTING THE BATTERY LIFE AND DATA RETENTION PERIOD OF NVRAMS Original PDF

    AN1012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEA1552

    Abstract: TEA1552 application note AN10128-02 TP97036
    Text: ADVANCED APPLICATION NOTE TEA1552 Usage of the VCOadj and Stand-By function AN10128-02 Philips Semiconductors TP97036.2/W97 Philips Semiconductors Advanced Application Note AN10128-02 Usage of the VCOadj and PFCoff function Revision history 0.1 first final edition


    Original     		PDF TEA1552 AN10128-02 TP97036 2/W97 560kO) TEA1552 TEA1552 application note AN10128-02

    AN1012

    Abstract: pogo pins datasheet pogo pin RF Filters CTS Electronic Components rf filter rf pogo pin testing of diode ceramic resonator filter AN-1012
    Text: Technical Brief AN1012 Visual Characteristics of Ceramic Filters Introduction This Technical Brief addresses visual characteristics of RF filters that are the result of tuning the filters and normal manufacturing processes. Ceramic RF Filters manufactured by CTS Electronic Components


    Original     		PDF AN1012 AN1012 pogo pins datasheet pogo pin RF Filters CTS Electronic Components rf filter rf pogo pin testing of diode ceramic resonator filter AN-1012

    AM457

    Abstract: ME651 AN1012 AN-1012 keramische
    Text: Anwendungsbeschreibung AN1012: AM457- Verstärker-IC für keramische Meßzellen Inhalt des Artikels ist die Beschreibung einer elektronischen Schaltung auf der Basis des AM457 zur Verstärkung und Kalibrierung des Ausgangssignals einer keramischen Druckmesszelle mit einer Wheatstoneschen Widerstandsbrücke. Ziel ist ein


    Original     		PDF AN1012: AM457- AM457 ME651 100mV AM457 ME651 AN1012 AN-1012 keramische

    mov 250v

    Abstract: BT151 Application note AN10121 Philips Semiconductors AN10121 Factsheet 013 sot78 SC03 Application note 1 AN1012 BT150 BT1396
    Text: Application Note 闸流管和双向可控硅 - 成功应用的十条黄金规则 AN10121 Philips Semiconductors Philips Semiconductors 闸流管和双向可控硅 - 成功应用的十条黄金规则 Application Note AN10121 Application Note 闸流管和双向可控硅 - 成功应用的十条黄金规则


    Original     		PDF AN10121 AN1012 OT186F-pack OT186A mov 250v BT151 Application note AN10121 Philips Semiconductors AN10121 Factsheet 013 sot78 SC03 Application note 1 AN1012 BT150 BT1396

    Untitled

    Abstract: No abstract text available
    Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their


    Original     		PDF AN1012

    SOT404

    Abstract: SOT428 philips application information SOT-428 SOT223 sot-223 SC18 semiconductors
    Text: Application Note 表面安装式闸流管和双向可控硅 AN10120 Philips Semiconductors Philips Semiconductors Application Note AN10120 表面安装式闸流管和双向可控硅 Application Note 表面安装式闸流管和双向可控硅 AN10120 Author


    Original     		PDF AN10120 OT223 20mm2 OT428 100mm 100mm, SOT404 SOT428 philips application information SOT-428 SOT223 sot-223 SC18 semiconductors

    ME651

    Abstract: AM457 Wheatstone Bridge amplifier AN1012 Schematic diagram of DRO ANALOG MICROELECTRONICS
    Text: Application description AN1012: AM457 Amplifier IC for ceramic sensing elements This article describes an electronic circuit using the IC AM457 to amplify and calibrate the output signal of a ceramic pressure sensing element with a Wheatstone resistance bridge. The aim is to obtain a ratiometric output signal Uout of 0.5…4.5V


    Original     		PDF AN1012: AM457 100mVFS) AM457 100mV ME651 Wheatstone Bridge amplifier AN1012 Schematic diagram of DRO ANALOG MICROELECTRONICS

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02

    AN1012

    Abstract: AN1014
    Text: AN1012 SigmaQuad Type I vs. Type II Timing Comparison Introduction SigmaQuad-II SRAMs implement a DLL Delay Locked Loop . The DLL provides a larger data valid window by synchronizing the output data to the input clocks, C and C or K and K, if C and C are tied high. SigmaQuad- II SRAMs have a Type I option, but


    Original     		PDF AN1012 AN1012 AN1014

    AN1012

    Abstract: 16HV785 1071 buck D822 transistor PIC with bluetooth DE-49 AN-1012 PS2070 SVC 471 10 PIC16HV785 DEVICE ,DS41249
    Text: AN1012 PIC16HV785: Programmable Lithium and Nickel Battery Charger Rich DelRossi Microchip Technology Inc. Features • User-Configurable Battery Charger for Lithium, Nickel and Lead Battery Packs • Based on PIC16F785 with Integrated Shunt Regulator • Firmware and Support Tools for easy design


    Original     		PDF AN1012 PIC16HV785: PIC16F785 10-bit DS01012B-page AN1012 16HV785 1071 buck D822 transistor PIC with bluetooth DE-49 AN-1012 PS2070 SVC 471 10 PIC16HV785 DEVICE ,DS41249

    BR1632 safety

    Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 br1632 br1225

    AN1012

    Abstract: HC55120 HC55121 HC55130 HC55140 HC55142 HC5514XEVAL2 IDT821064 ISL5571A
    Text: Operation of the UniSLIC14 & IDT821064 Evaluation Module Application Note May 2002 AN1012 Author: Don LaFontaine Functional Description Verifying Basic Operation This application note is intended to supplement IDT’s Evaluation Board User’s Guide. The Users guide describes


    Original     		PDF UniSLIC14 IDT821064 AN1012 IDT821064 UniSLIC14 AN1012 HC55120 HC55121 HC55130 HC55140 HC55142 HC5514XEVAL2 ISL5571A

    Untitled

    Abstract: No abstract text available
    Text: M41T81S Serial access real-time clock RTC with alarms Datasheet − production data Features • ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century 32 KHz crystal oscillator with integrated load capacitance (12.5 pf) which provides


    Original     		PDF M41T81S

    SOX28

    Abstract: KDS Crystals DOC KDS Crystals through hole
    Text: M41ST87Y M41ST87W 5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM Features Embedded crystal • 5.0, 3.3, or 3.0 V operation ■ 400 kHz I2C bus ■ NVRAM supervisor to non-volatize external


    Original     		PDF M41ST87Y M41ST87W M41ST87Y: M41ST87W: SOX28 KDS Crystals DOC KDS Crystals through hole

    44-PIN

    Abstract: M48T129V M48T129Y
    Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and


    Original     		PDF M48T129Y M48T129V 32-pin M48T129Y: M48T129V: 44-PIN M48T129V M48T129Y

    02APR

    Abstract: No abstract text available
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: 28-lead 02APR

    M48T35Y

    Abstract: M48T35 SOH28
    Text: M48T35 M48T35Y 5.0V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


    Original     		PDF M48T35 M48T35Y 28-pin M48T35: M48T35Y: PCDIP28 M48T35Y M48T35 SOH28

    M41ST84W

    Abstract: M41ST84Y M4TXX-BR12SH SOH28 KDS Crystals 8.192
    Text: M41ST84Y M41ST84W 5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS FEATURES SUMMARY • 5.0 OR 3.0V OPERATING VOLTAGE I2C Figure 1. 16-pin SOIC Package ■ SERIAL INTERFACE SUPPORTS (400 KHz) BUS ■ OPTIMIZED FOR MINIMAL INTERCONNECT TO MCU


    Original     		PDF M41ST84Y M41ST84W 16-pin M41ST84Y: M41ST84W: M41ST84W M41ST84Y M4TXX-BR12SH SOH28 KDS Crystals 8.192

    M48T59

    Abstract: M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28
    Text: M48T59 M48T59Y/M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION ■


    Original     		PDF M48T59 M48T59Y/M48T59V* M48T59: M48T59Y: M48T59V* 28-pin M48T59 M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28

    CMOS BATTERY HOLDER

    Abstract: M4Z32-BROOSH1 1N5817 AN1012 M40Z300 M40Z300W M4Z28-BR00SH1 M4Z32-BR00SH1 MBRS120T3
    Text: M40Z300 M40Z300W NVRAM CONTROLLER for up to EIGHT LPSRAM PRELIM IN ARY DATA CONVERT LOW POWER SRAMs into NVRAMs PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION when Vcc is OUT-OF-TOLERANCE TWO INPUT DECODER ALLOWS CONTROL


    OCR Scan     		PDF M40Z300 M40Z300W M40Z300: M40Z300W: 28-LEAD M40Z300, M4Z32-BR00SH CMOS BATTERY HOLDER M4Z32-BROOSH1 1N5817 AN1012 M40Z300W M4Z28-BR00SH1 M4Z32-BR00SH1 MBRS120T3

    1N5817

    Abstract: M40Z111 M4Z28-BR00SH1 M4Z32-BR00SH1 SOH28
    Text: M 4 0 Z 111 M 4 0 Z 111V NVRAM CONTROLLER for up to TWO LPSRAM • CONVERT LOW POWER SRAMs into NVRAMs ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■ AUTOMATIC WRITE-PROTECTION when Vcc is OUT-OF-TOLERANCE ■ CHOICE of SUPPLY VOLTAGES and


    OCR Scan     		PDF M40Z111 M40Z111V M40Z111: M40Z111V: 28-LEAD DES42 M40Z111, 1N5817 M4Z28-BR00SH1 M4Z32-BR00SH1 SOH28

    M48Z35

    Abstract: M48Z35V M48Z35Y M4Z28-BR00SH1 SOH28
    Text: M48Z35 M48Z35Y, M48Z35V 256 Kbit 32Kb x 8 ZERO PO W ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■ WRITE PROTECT VOLTAGES


    OCR Scan     		PDF M48Z35 M48Z35Y, M48Z35V M48Z35: M48Z35Y: M48Z35V: 28-LEAD SOH28 PCDIP28 Fig11 M48Z35V M48Z35Y M4Z28-BR00SH1 SOH28