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    0603CAP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S560832E

    Abstract: K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004


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    PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit K4S560832E K4S561632E

    K4S281632F

    Abstract: m464s1724f K4S281632
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


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    PDF 128MB 144pin 64-bit M464S0924FT59 8Mx16 K4S281632F m464s1724f K4S281632

    m464s64* samsung

    Abstract: K4S560832E K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004


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    PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit m464s64* samsung K4S560832E K4S561632E

    Untitled

    Abstract: No abstract text available
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004


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    PDF 128MB 144pin 64-bit M464S0924FTS-C M464S1724FTS-C

    Untitled

    Abstract: No abstract text available
    Text: KMM464S924AT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    PDF KMM464S924AT1 PC100 8Mx16 KM416S8030AT

    Untitled

    Abstract: No abstract text available
    Text: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


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    PDF 256MB, 512MB 144pin 64-bit

    Untitled

    Abstract: No abstract text available
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.0 January. 2004 Rev. 1.0 January. 2004 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 0.0 December, 2003 - First release


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    PDF 128MB 144pin 64-bit M464S0924FTS-C 8Mx16

    M464S0924MT1-L1H

    Abstract: No abstract text available
    Text: M464S0924MT1 PC100 SODIMM M464S0924MT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0924MT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M464S0924MT1 PC100 M464S0924MT1 8Mx64 8Mx16, 400mil 144-pin M464S0924MT1-L1H

    M464S1654BT2

    Abstract: M464S1654BT2-L75
    Text: M464S1654BT2 PC133 SODIMM Revision History Revision 0 Oct. 2000 -PC133 First Published. Rev. 0.0 Oct. 2000 M464S1654BT2 PC133 SODIMM M464S1654BT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


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    PDF M464S1654BT2 PC133 -PC133 M464S1654BT2 16Mx64 16Mx16 M464S1654BT2-L75

    Untitled

    Abstract: No abstract text available
    Text: M464S1654BT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Rev. 0 May. 2000 M464S1654BT1 PC133 SODIMM M464S1654BT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


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    PDF M464S1654BT1 -PC133 PC133 M464S1654BT1 16Mx64 16Mx16

    K4S281632F

    Abstract: No abstract text available
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004 64MB, 128MB Unbuffered SODIMM


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    PDF 128MB 144pin 64-bit 8Mx16 K4S281632F K4S281632F

    Untitled

    Abstract: No abstract text available
    Text: M464S1654BT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Revision 0.1 (Sep. 2000) -Typo error corrections at Package dimensions. Rev. 0.1 Sep. 2000 M464S1654BT1 PC133 SODIMM M464S1654BT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD


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    PDF M464S1654BT1 PC133 -PC133 M464S1654BT1 16Mx64 16Mx16

    M464S0924CT1

    Abstract: M464S0924CT1-L1H M464S0924CT1-L1L
    Text: M464S0924CT1 PC100 SODIMM M464S0924CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S0924CT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M464S0924CT1 PC100 M464S0924CT1 8Mx64 8Mx16, 400mil 144-pin M464S0924CT1-L1H M464S0924CT1-L1L

    m464s16* samsung

    Abstract: K4S561632E K4S560832E 0603CAP K4S56163
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.1 September, 2003 Rev. 1.1 September, 2003 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 June, 2003


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    PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit m464s16* samsung K4S561632E K4S560832E 0603CAP K4S56163

    KMM464S924

    Abstract: No abstract text available
    Text: KMM464S924BT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    PDF KMM464S924BT1 PC100 8Mx16 KM416S8030BT KMM464S924

    Untitled

    Abstract: No abstract text available
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die x16 64-bit Non ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 (Nov., 2002) - First release


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    PDF 128MB 144pin 64-bit M464S0924ETS-C M464S1724ETS-C

    Untitled

    Abstract: No abstract text available
    Text: M464S0924BT1 PC133 SODIMM Revision History Revision 0 Oct. 1999 -PC133 First Published. Revision 0.1 (Sep. 2000) -Typo error corrections at Package dimensions. Rev. 0.1 Sep. 2000 M464S0924BT1 PC133 SODIMM M464S0924BT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


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    PDF M464S0924BT1 PC133 -PC133 M464S0924BT1 8Mx64 8Mx16,

    K4S281632E

    Abstract: No abstract text available
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb E-die 64-bit Non ECC Revision 1.4 March. 2004 Rev. 1.4 March. 2004 64MB, 128MB Unbuffered SODIMM SDRAM Revision History Revision 1.0 November, 2002 - First release


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    PDF 128MB 144pin 64-bit M464S0924ETS-C 8Mx16 K4S281632E

    M464S0924CT1

    Abstract: No abstract text available
    Text: M464S0924CT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Rev. 0 May. 2000 M464S0924CT1 PC133 SODIMM M464S0924CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


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    PDF M464S0924CT1 PC133 -PC133 M464S0924CT1 8Mx64 8Mx16,

    Untitled

    Abstract: No abstract text available
    Text: M464S0924ETS PC133 SODIMM M464S0924ETS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous GENERAL DESCRIPTION FEATURE The Samsung M464S0924ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M464S0924ETS M464S0924ETS PC133 8Mx64 8Mx16, M464S0924DTE 400mil 144-pin

    K4S511632B

    Abstract: M464S3354BTS-C
    Text: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 512Mb B-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004


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    PDF 256MB, 512MB 144pin 64-bit K4S511632B M464S3354BTS-C

    i 3005-2

    Abstract: SO-DIMM 144-pin gls 126 VM466S924
    Text: Product Specifications PART NO: VL466S924-GAS/GHS/GLS REV: 1.4 General Information 64MB 8Mx64 SDRAM PC100/PC133 NON-ECC UNBUFFERED SODIMM 144-PIN Description: The VM466S924 is a 8M x 64 Synchronous Dynamic RAM high density memory module. This memory module consists of 4 CMOS 8Mx16 bits with 4banks Synchronous DRAMsin TSOP-II400mil packages and a


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    PDF VL466S924-GAS/GHS/GLS 8Mx64 PC100/PC133 144-PIN VM466S924 8Mx16 TSOP-II400mil 144-pin DQ0-DQ63 KE024 i 3005-2 SO-DIMM 144-pin gls 126

    M464S0924BT1

    Abstract: M464S0924BT1-L75
    Text: M464S0924BT1 PC133 SODIMM Revision History Revision 0 Oct. 1999 -PC133 First Published. Rev. 0 Oct. 1999 M464S0924BT1 PC133 SODIMM M464S0924BT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


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    PDF M464S0924BT1 PC133 -PC133 M464S0924BT1 8Mx64 8Mx16, M464S0924BT1-L75

    M464S0924CT2-L75

    Abstract: M464S0924CT2
    Text: M464S0924CT2 PC133 SODIMM Revision History Revision 0 Oct. 2000 -PC133 First Published. Rev. 0.0 Oct. 2000 M464S0924CT2 PC133 SODIMM M464S0924CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


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    PDF M464S0924CT2 PC133 -PC133 M464S0924CT2 8Mx64 8Mx16, M464S0924CT2-L75