Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K4E66161 Search Results

    SF Impression Pixel

    K4E66161 Price and Stock

    Samsung Semiconductor K4E6616120-TL50

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics K4E6616120-TL50 19
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor K4E661612E-TC50

    4M X 16 EDO DRAM, 50 ns, PDSO50
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components K4E661612E-TC50 15
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    K4E66161 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K4E661611D Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet Original PDF
    K4E661611D-TC60 Samsung Electronics 4M x 16-Bit Cmos Dynamic Ram With Extended Data Out Original PDF
    K4E661612B Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612B-L Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612B-TC Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612B-TC45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns Original PDF
    K4E661612B-TC50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns Original PDF
    K4E661612B-TC60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns Original PDF
    K4E661612B-TL45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Original PDF
    K4E661612B-TL50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Original PDF
    K4E661612B-TL60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Original PDF
    K4E661612C Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-50 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-60 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-L Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-L45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-L50 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-L60 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-T Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    K4E66161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4E641611D

    Abstract: K4E661611D
    Text: K4E661611D, K4E641611D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this


    Original     		PDF K4E661611D, K4E641611D 16bit 4Mx16 K4E66161 400mil K4E641611D K4E661611D

    K4E641612E

    Abstract: K4E661612E K4E641612E-T
    Text: Industrial Temperature K4E661612E,K4E641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden


    Original     		PDF K4E661612E K4E641612E 16bit 4Mx16 400mil K4E641612E K4E641612E-T

    K4E641612D-TC

    Abstract: K4E641612D K4E641612D-T K4E661612D K4E641612
    Text: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		PDF K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D-TC K4E641612D K4E641612D-T K4E641612

    K4E641612C

    Abstract: K4E641612C-T K4E661612C K4E661612C-T
    Text: K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		PDF K4E661612C K4E641612C 16bit 4Mx16 400mil K4E641612C K4E641612C-T K4E661612C-T

    k4e641611c

    Abstract: No abstract text available
    Text: K4E661611C, K4E641611C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this


    Original     		PDF K4E661611C, K4E641611C 16bit 4Mx16 K4E66161 400mil k4e641611c

    Untitled

    Abstract: No abstract text available
    Text: K4E661611B,K4E641611B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60) are optional features of this


    Original     		PDF K4E661611B K4E641611B 16bit 4Mx16 400mil

    K4E641612B

    Abstract: K4E661612B
    Text: K4E661612B, K4E641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		PDF K4E661612B, K4E641612B 16bit 4Mx16 400mil K4E641612B K4E661612B

    K4E641612D

    Abstract: K4E641612D-T K4E661612D
    Text: Industrial Temperature K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have C A S -before-R A S refresh, R A S -only refresh and Hidden


    Original     		PDF K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D K4E641612D-T

    K4E641612E

    Abstract: K4E661612E
    Text: K4E661612E,K4E641612E CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		PDF K4E661612E K4E641612E 16bit 4Mx16 400mil K4E641612E

    K4E641612D-T

    Abstract: K4E661612D K4E641612D
    Text: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		PDF K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D-T K4E641612D

    K4E641612C

    Abstract: K4E641612C-T K4E661612C K4E661612C-T
    Text: K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		PDF K4E661612C K4E641612C 16bit 4Mx16 400mil K4E641612C K4E641612C-T K4E661612C-T

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F080 8 4DT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M366F080(8)4DT1-C DRAM MODULE M366F080(8)4DT1-C


    Original     		PDF M366F080 8Mx64 4Mx16 4Mx16, 8Mx64bits 4Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E080 8 4CT0-C Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M364E080(8)4CT0-C DRAM MODULE M364E080(8)4CT0-C


    Original     		PDF M364E080 8Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits

    K4E641612D

    Abstract: No abstract text available
    Text: DRAM MODULE M366F040 8 4DT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4DT1-C DRAM MODULE M366F040(8)4DT1-C


    Original     		PDF M366F040 4Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits K4E641612D

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E040 8 4BT0-C Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M364E040(8)4BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M364E040 4Mx64 4Mx16 4Mx16, 4Mx64bits 100Min

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E040 8 4CT0-C Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M364E040(8)4CT0-C DRAM MODULE M364E040(8)4CT0-C


    Original     		PDF M364E040 4Mx64 4Mx16 4Mx16, 4Mx64bits

    l80225/b

    Abstract: k4s281632 KA78R33 samsung toggle NAND XCV800BG560 S3F460H serial flash M25 128kb STM L80225B 15 pin D sub connector xc18v04pc44
    Text: S3F460H 1 PRODUCT OVERVIEW PRODUCT OVERVIEW INTRODUCTION SAMSUNG’s Integration Platform is designed to provide a cost-effective, and high performance micro-controller solution for printer and general application. To design of User logic, Integration Platform provides the following :


    Original     		PDF S3F460H 16-bits 10-bits 32bit) 32-bit 16-bit l80225/b k4s281632 KA78R33 samsung toggle NAND XCV800BG560 S3F460H serial flash M25 128kb STM L80225B 15 pin D sub connector xc18v04pc44

    K4E641612D-T

    Abstract: k4e641612dt
    Text: DRAM MODULE M366F080 8 4DT1-C M366F080(8)4DT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4DT1-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)4DT1-C consists of eight CMOS 4Mx16bits


    Original     		PDF M366F080 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin K4E641612D-T k4e641612dt

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F080 8 4BT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F080(8)4BT1-C M366F080(8)4BT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4BT1-C is a 8Mx64bits Dynamic


    Original     		PDF M366F080 8Mx64 4Mx16 4Mx16, 8Mx64bits 4Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F040 8 4CT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4CT1-C DRAM MODULE M366F040(8)4CT1-C


    Original     		PDF M366F040 4Mx64 4Mx16 4Mx16, 4Mx64bits

    K4E641612D-T

    Abstract: No abstract text available
    Text: DRAM MODULE M366F040 8 4DT1-C M366F040(8)4DT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4DT1-C is a 4Mx64bits Dynamic RAM high density memory module. The Samsung M366F040(8)4DT1-C consists of four CMOS 4Mx16bits


    Original     		PDF M366F040 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin K4E641612D-T

    TAA 141

    Abstract: No abstract text available
    Text: DRAM MODULE M366F040 8 4BT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M366F040(8)4BT1-C M366F040(8)4BT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4BT1-C is a 4Mx64bits Dynamic


    Original     		PDF M366F040 4Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits TAA 141