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    K4E661612C Search Results

    K4E661612C Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4E661612C Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-50 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-60 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-L Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-L45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-L50 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-L60 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-T Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-T45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-T50 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-T60 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-TC Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E661612C-TC45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns Original PDF
    K4E661612C-TC50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns Original PDF
    K4E661612C-TC60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns Original PDF
    K4E661612C-TL45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Original PDF
    K4E661612C-TL50 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Original PDF
    K4E661612C-TL60 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Original PDF

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    K4E641612C

    Abstract: K4E641612C-T K4E661612C K4E661612C-T
    Text: K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		PDF K4E661612C K4E641612C 16bit 4Mx16 400mil K4E641612C K4E641612C-T K4E661612C-T

    K4E641612C

    Abstract: K4E641612C-T K4E661612C K4E661612C-T
    Text: K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		PDF K4E661612C K4E641612C 16bit 4Mx16 400mil K4E641612C K4E641612C-T K4E661612C-T

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F080 8 4CT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M366F080(8)4CT1-C DRAM MODULE M366F080(8)4CT1-C


    Original     		PDF M366F080 8Mx64 4Mx16 4Mx16, 8Mx64bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F040 8 4CT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Jan. 1999 DRAM MODULE Revision History Version 0.0 (Jan. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4CT1-C DRAM MODULE M366F040(8)4CT1-C


    Original     		PDF M366F040 4Mx64 4Mx16 4Mx16, 4Mx64bits