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    Untitled

    Abstract: No abstract text available
    Text: K4E661611B,K4E641611B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60) are optional features of this


    Original     		K4E661611B K4E641611B 16bit 4Mx16 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E040 8 4BT0-C Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M364E040(8)4BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		M364E040 4Mx64 4Mx16 4Mx16, 4Mx64bits 100Min PDF