K4E641612D-TC
Abstract: K4E641612D K4E641612D-T K4E661612D K4E641612
Text: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden
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K4E661612D
K4E641612D
16bit
4Mx16
400mil
K4E641612D-TC
K4E641612D
K4E641612D-T
K4E641612
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K4E641612D
Abstract: K4E641612D-T K4E661612D
Text: Industrial Temperature K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have C A S -before-R A S refresh, R A S -only refresh and Hidden
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K4E661612D
K4E641612D
16bit
4Mx16
400mil
K4E641612D
K4E641612D-T
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K4E641612D-T
Abstract: K4E661612D K4E641612D
Text: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden
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PDF
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K4E661612D
K4E641612D
16bit
4Mx16
400mil
K4E641612D-T
K4E641612D
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M366F080 8 4DT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M366F080(8)4DT1-C DRAM MODULE M366F080(8)4DT1-C
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M366F080
8Mx64
4Mx16
4Mx16,
8Mx64bits
4Mx16bits
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K4E641612D
Abstract: No abstract text available
Text: DRAM MODULE M366F040 8 4DT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4DT1-C DRAM MODULE M366F040(8)4DT1-C
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M366F040
4Mx64
4Mx16
4Mx16,
4Mx64bits
4Mx16bits
K4E641612D
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K4E641612D-T
Abstract: k4e641612dt
Text: DRAM MODULE M366F080 8 4DT1-C M366F080(8)4DT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4DT1-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)4DT1-C consists of eight CMOS 4Mx16bits
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M366F080
4Mx16,
8Mx64bits
4Mx16bits
400mil
168-pin
K4E641612D-T
k4e641612dt
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K4E641612D-T
Abstract: No abstract text available
Text: DRAM MODULE M366F040 8 4DT1-C M366F040(8)4DT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4DT1-C is a 4Mx64bits Dynamic RAM high density memory module. The Samsung M366F040(8)4DT1-C consists of four CMOS 4Mx16bits
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M366F040
4Mx16,
4Mx64bits
4Mx16bits
400mil
168-pin
K4E641612D-T
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