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    K2395 Price and Stock

    Lorlin Electronics LTD CK2395

    Rotary Switches ROT 3POL 2-4POS SOL 6.35X17.5MM FLT SHFT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CK2395 51
    • 1 $10.04
    • 10 $10.04
    • 100 $6.42
    • 1000 $5.73
    • 10000 $5.73
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    Arizona Capacitors 63K2395-AAA

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 63K2395-AAA 25 1
    • 1 $36
    • 10 $36
    • 100 $33.228
    • 1000 $33.228
    • 10000 $33.228
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    Vishay Intertechnologies CRCW120641K2FKEA

    Thick Film Resistors - SMD 1/4watt 41.2Kohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CRCW120641K2FKEA Reel 5,000 5,000
    • 1 -
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    • 100 -
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    • 10000 $0.00776
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    Vishay Intertechnologies CPF210R000FKE14

    Metal Film Resistors - Through Hole 2watts 10ohms 1% 100ppm
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    TTI CPF210R000FKE14 Bulk 1,900 100
    • 1 -
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    • 100 $1.14
    • 1000 $0.81
    • 10000 $0.71
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    Amphenol Corporation 91-552009-35I

    Circular MIL Spec Connector 128P WL MNT PIN SZ 25
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 91-552009-35I Each 69 1
    • 1 $114.33
    • 10 $101.25
    • 100 $97.31
    • 1000 $97.31
    • 10000 $97.31
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    K2395 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    64kx4

    Abstract: HY51C264-12 strobe w24 64Kx4-Bit
    Text: ▲ HY51C264 64K x4-Bit Dual Port CMOS RAM HYUNDAI SEMICONDUCTOR OCTOBER 1986 DESCRIPTION The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE


    OCR Scan     		HY51C264 64Kx4-Bit HY51C264 64Kx4) K29793/4 K23955/7 OJ06-10/86 64kx4 HY51C264-12 strobe w24 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Æ HYUNDAI iíB L SEMICONDUCTOR HY62C88 16,384x4-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C88 is a high speed, low power, 16,384x4-bit static CMOS RAM fabricated using high-performance HYCMOS process technology. This high reliability process coupled w ith in­


    OCR Scan     		HY62C88 384x4-Bit 16Kx4 K29793/4 K23955/7 DS13-08/86 PDF

    ka 75000

    Abstract: HY5164-15 HY5164-12 HYUNDAI car Hyundai Semiconductor HY5164 7500 GI 536 POWER 300MIL HY5164-10
    Text: HYUNDAI H Y 516 4 6 5 ,5 3 6 x 1-Bit D y n a m ic R A M .SEM IC O N DUCTO R OCTOBER 1986 DESCRIPTION T he HY5164 is a high speed 65,536 bit dynam ic R andom Access M emory. Fast page m ode has the features of fast usable speed, low pow er, and a typical soft error rate of less than 10 Failures In


    OCR Scan     		HY5164 HY5164 K29793/4 K23955/7 DS06C-10/86 ka 75000 HY5164-15 HY5164-12 HYUNDAI car Hyundai Semiconductor 7500 GI 536 POWER 300MIL HY5164-10 PDF

    k669 transistor

    Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
    Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r


    OCR Scan     		250mm Ratings/Ta-25 2SK2170UA) 2SK1069 2SK1332CV) 2SK209KH) 2SK2219CD) T0-126LP T0-220CI T0-220ML k669 transistor k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546 PDF

    tca 4401

    Abstract: HY5164-15
    Text: OCTOBER 1986 DESCRIPTION, FEATURES The HY5164 is a high speed 65,536 bit dynamic Random Access Memory. Fast page mode has the features of fast usable speed, low power, and a typical soft error rate of less than 10 Failures In Time FITfe . The HY5164 is ideally suited for ap­


    OCR Scan     		HY5164 HY5164-12 4ms/256 HY5164-10 100ns 120ns 150ns 300MIL tca 4401 HY5164-15 PDF

    hyundai

    Abstract: 536X4
    Text: PRELIMINARY A HY51C464 HYUNDAI SEMICONDUCTOR 65,536x4-Bit CMOS Dynamic RAM AUGUST 1986 The HY51C464 offers a maximum standby current of 100 n A when RASs Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re­


    OCR Scan     		536x4-Bit HY51C464 HY51C464 K29793/4 K23955/7 hyundai 536X4 PDF

    dvb t receiver circuit diagram

    Abstract: Hyundai DBS raised cosine Hyundai DVB Single Chip L-band Tuner DVB Satellite LP-901 dvb circuit diagram
    Text: •HYUNDAI E L E C T R O N I C S DIGITAL MEDIA DIVISION Advanced Product Information - May, 1996 TM HDM85ÎIP CWeST DVB C om pliant Q P S K Dem odulator K i Introduction The HDM8511P CWeST CWeST=Cable, Wireless, Satellite, Telco is a highly integrated, single-chip variable data rate digital


    OCR Scan     		HDM85 HDM8511P HDM8500 H2-04 LP901 dvb t receiver circuit diagram Hyundai DBS raised cosine Hyundai DVB Single Chip L-band Tuner DVB Satellite LP-901 dvb circuit diagram PDF

    TPC 8406

    Abstract: HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id
    Text: HYUNDÛJ HY51C1000 S E M IC Ü N Ü U U T Ü K lM X 1-Bit CMOS DRAM M131202A-SEP90 DESCRIPTION FEATURES T h e H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic ran d o m a c ­ cess m em ory. F ab rica ted w ith th e H Y U N D A I C M O S process, th e H Y 51C 1000 offers a fast


    OCR Scan     		HY51C1000 M131202A-SEP90 HY51C1000 576X1 002-A K29793/4 K23955/6 TPC 8406 HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id PDF

    HY27C64-20

    Abstract: HY27C64-15 HY27C64-30 IN3064
    Text: HY27C64 Æ HYUNDAI SEMICONDUCTOR DESCRIPTION 8192x8-Bit CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where


    OCR Scan     		HY27C64 8192x8-Bit HY27C64 536-bit HY27C64. 150/200/300ns K29793/4 K23955/7 DS05-08/86 HY27C64-20 HY27C64-15 HY27C64-30 IN3064 PDF

    Hyundai Semiconductor

    Abstract: hy27c64-20 HY27C64A
    Text: HY27C64 Æ HYUNDAI S E M IC O N D U C T O R DESCRIPTION 8192x8-B it CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where


    OCR Scan     		HY27C64 8192x8-Bit 536-bit HY27C64. 150/200/300ns 150ns 200ns 300ns K29793/4 Hyundai Semiconductor hy27c64-20 HY27C64A PDF

    Untitled

    Abstract: No abstract text available
    Text: A £ SEMICONDUCTOR & & Ë g ! H Y 5 lMxi-Bit 1 C 1cmos 0 0dram M131202A-SEP90 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast


    OCR Scan     		M131202A HY51C1000 576X1 K29793/4 K23955/6 PDF

    tca 4401

    Abstract: 5164-10 K2395 R/tca 4401
    Text: HY5164 A HYUNDAI 6 5 ,5 3 6 x 1-B it D y n a m ic R A M -¿ ^ S E M IC O N D U C T O R OCTOBER 1986 DESCRIPTION FEATURES The HY5164 is a high speed 65,536 bit dynamic Random Access Memory. Fast page mode has the features of fast usable speed, low power, and a


    OCR Scan     		HY5164 Y5164-12 s/256 Y5164-10 HY5164 Y5164 applica300M K23955/7 DS06C-10/86 tca 4401 5164-10 K2395 R/tca 4401 PDF

    hyundai

    Abstract: 741 PIN DIAGRAM 741 16 PIN Hyundai Semiconductor HY62C87
    Text: P R E L IM IN A R Y HY62C87 Æ HYUNDAI /• ^ S E M IC O N D U C T O R 6 5 ,5 3 6 x l-B it CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C87 is a high speed, low power, 65,536x 1 bit static CMOS RAM fabricated using high­ perform ance HYCMOS process technology.


    OCR Scan     		HY62C87 HY62C87 64Kxl K29793/4 K23955/7 DS12-08/86 hyundai 741 PIN DIAGRAM 741 16 PIN Hyundai Semiconductor PDF

    d1684

    Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
    Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249


    OCR Scan     		2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460 PDF

    HY51C64-12

    Abstract: DYNAMIC RAM 65536 HY51C64L-12 e1986
    Text: s - n o o 0 0 1 8 9 1 m / SEMICONDUCTOR DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynam ic Random Access M emory. Fabricated in CM OS technology, the HY51C64 offers features not provided by NM OS technology-Ripplem ode* fast usable speed, low power, and an average soft error


    OCR Scan     		HY51C64 HY51C64 150ns K29793/4 K23955/7 DS02-02/86 HY51C64-12 DYNAMIC RAM 65536 HY51C64L-12 e1986 PDF

    HY62C64

    Abstract: 8192X8BIT
    Text: H Y U N D A I E L E C T R O N I C S 03 D E | 4b7500â Q000117 M T-46-23-12 PRELIMINARY N f SEMICONDUCTOR NOVEM BER 1986 DESCRIPTION FEATURES The HYUNDAI HY62C64 is a 65, 536-bit static random access memory organized as 8192 words by 8 bits and operates from a single 5 volt supply It is built


    OCR Scan     		Q000117 T-46-23-12 HY62C64 536-bit 28-pin, HY62C64/L-45 HY62C64/L-55 HY62C64/L-70 HY62C64/L 8192X8BIT PDF

    d1878

    Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
    Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258


    OCR Scan     		A1527 A1528 A1537 A1540 A1573 A1574 A1575 A1580 A1590 A1607 d1878 D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY JL H Y U N D A I /• ^ S E M IC O N D U C T O R HY62C87 65,536xl-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C87 is a high speed, low power, 65,536x 1 bit static CMOS RAM fabricated using highperformance HYCMOS process technology.


    OCR Scan     		HY62C87 536xl-Bit K29793/4 K23955/7 DS12-08/86 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51C264 HYUNDAI ▲ SEMICONDUCTOR 64K x4-B it Dual Port CMOS RAM OCTOBER 1986 DESCRIPTION FEATURES The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE


    OCR Scan     		HY51C264 HY51C264 64Kx4) K23955/7 OJ06-10/86 PDF

    Untitled

    Abstract: No abstract text available
    Text: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not


    OCR Scan     		HY51C64 536X1-Bit HY51C64 16-pin 100ns 120ns 150ns K29793/4 PDF