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    16KX4 Search Results

    16KX4 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    100484S8C Renesas Electronics Corporation 16KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    101494S10CB Renesas Electronics Corporation 16KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    101494S5CB Renesas Electronics Corporation 16KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    101494S7XE Renesas Electronics Corporation 16KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    10484S5CB Renesas Electronics Corporation 16KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    100484S5C Renesas Electronics Corporation 16KX4 ECL I/O SRAM Visit Renesas Electronics Corporation

    16KX4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS MEMORY PRODUCTS THMS12 1S20Z-25, -35 ¡DESCRIPTION] The THMS121620Z is a 16,384 words by 12 bits static RAM module constructed on a double sided PC board using three TC55417J 16Kx4 static RAMs in SOJ packages. The THMS121620Z is offered in a 40 pin 500 mil zip module suitable for


    OCR Scan     		PDF THMS12 1S20Z-25, THMS121620Z TC55417J 16Kx4) THMS121620Z-25 THMS121620Z-35

    QS8886

    Abstract: No abstract text available
    Text: QS8886A Q • • • • • • High-Speed CMOS 16KX4 SRAM with Output Enable High Speed Access and Cycle times 8ns/10ns/12ns/15ns Commercial 10ns/12ns/15ns/20ns Military Output Enable feature Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B


    OCR Scan     		PDF QS8886A 16KX4 qss886a 8ns/10ns/12ns/15ns 10ns/12ns/15ns/20ns MIL-STD-883, QS8886A 16Kx4. MDSS-00024-00 QS8886

    Untitled

    Abstract: No abstract text available
    Text: QS8883 High-Speed CMOS 16Kx4 Cache Tag SRAM F E A T U R E S /B E N E F IT S • • • • • High Speed Match Access and Cycle times 10ns, 12ns/15ns/20ns/25ns/35ns Commercial 15ns/20ns/25ns/35ns/45ns Military TTL compatible I/O Low power, high-speed QCMOS technology


    OCR Scan     		PDF QS8883 16Kx4 12ns/15ns/20ns/25ns/35ns 15ns/20ns/25ns/35ns/45ns 24-pin 28-pin QS8883

    Untitled

    Abstract: No abstract text available
    Text: QS8881, QS8882 Q High-Speed CMOS 16Kx4 SRAM with Separate I/O QS8881 QS8882 FEATURES/BENEFITS • • • • • High Speed Access and Cycle times 10ns/12ns/15ns/20ns Commercial JEDEC standard pinout TTL compatible I/O Low power, high-speed QCMOS technology


    OCR Scan     		PDF QS8881, QS8882 16Kx4 QS8881 10ns/12ns/15ns/20ns 28-pin QS8881

    Untitled

    Abstract: No abstract text available
    Text: QS8883 Q High-Speed CMOS 16Kx4 Cache Tag SRAM Q S8883 FEATURES/BENEFITS • • • • • High Speed Match Access and Cycle times 10ns, 12ns/15ns/20ns/25ns/35ns Commercial 15ns/20ns/25ns/35ns/45ns Military TTL compatible I/O Low power, high-speed QCMOS technology


    OCR Scan     		PDF QS8883 16Kx4 S8883 12ns/15ns/20ns/25ns/35ns 15ns/20ns/25ns/35ns/45ns 24-pin 28-pin QS8883

    IMS1624LM

    Abstract: IMS1624M IMS1624M-45 IMS1624M-55 inputs and outputs of 7493
    Text: IM S 1 6 2 4 M IM S 1 6 2 4 L M CMOS High Performance 16K x 4 Static RAM MIL-STD-883C m o s DESCRIPTION FEATURES The INMOS IMS1624M is a high performance 16Kx4 CMOS Static RAM processed in full compliance to MILSTD-883C andguaranteed to operate over the full military


    OCR Scan     		PDF MIL-STD-883C 24-Pin, 300-mil 28-Pin, IMS1624M IMS1624LM MIL-STD-883C 16Kx4 IMS1624LM IMS1624M-45 IMS1624M-55 inputs and outputs of 7493

    THMS161620Z-25

    Abstract: THMS161620Z-35
    Text: TOSHIBA MOS MEMORY PRODUCTS TH M SI 6 1620Z-25, -35 ¡DESCRIPTION! Z The THMS161620 is a 16,384 words by 16 bits static RAM module constructed on a double sided PC ¿card u 4 i n g four TC55417J 16Kx4 static RAMs in SOJ packages. applications^0 such 1? £


    OCR Scan     		PDF THMS161620Z-25 THMS161620Z TC55417J 16Kx4) S161620 THMS161620Z-35 480mA

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM64B65 BiCMOS 16KX4 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12, 15, 20ns max. • Low Power Dissipation S tandby. 20mA (max.) Operating .160mA (max.)


    OCR Scan     		PDF KM64B65 16KX4 160mA KM64B65P: 22-pin KM64B65J: 24-pin 64B65 536-bit

    8881

    Abstract: DC 8881
    Text: Q S8881, QS8882 Q S 8881 Q S 88 8 2 High-Speed CMOS 16Kx4 SRAM with Separate I/O F E A TU R E S /B E N E FIT S • • • • • High Speed Access and Cycle times 10ns/12ns/15ns/20ns Commercial JEDEC standard pinout TTL compatible I/O Low power, high-speed QCMOS technology


    OCR Scan     		PDF S8881, QS8882 16Kx4 10ns/12ns/15ns/20ns 28-pin QS8881 QS8882 8881 DC 8881

    Untitled

    Abstract: No abstract text available
    Text: QS8883 Q High-Speed CMOS 16Kx4 Cache Tag SRAM v Qssssa FEATURES/BENEFITS • High Speed Match Access and Cycle times • 10ns, 12ns/15ns/20ns/25ns/35ns Commercial • 15ns/20ns/25ns/35ns/45ns Military • TTL compatible I/O • Low power, high-speed QCMOS technology


    OCR Scan     		PDF QS8883 16Kx4 12ns/15ns/20ns/25ns/35ns 15ns/20ns/25ns/35ns/45ns 24-pin 28-pin QS8883

    Untitled

    Abstract: No abstract text available
    Text: SRAM Test Configuration Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load +5V Figure 1. GNDto 3.0V 3 ns 1.5V 1.5V See Figures +5V Output test loads for: 4Kx4, 16Kx4, 64Kx4, 32Kx8 &128Kx8 SRAMs Except Low-Power


    OCR Scan     		PDF 16Kx4, 64Kx4, 32Kx8 128Kx8 8Kx18 8Kx16 32Kx8

    QS8888

    Abstract: No abstract text available
    Text: QS8888 High-Speed CMOS 16Kx4 SRAM with Common I/O Q FEATURES/BENEFITS High Speed Access and Cycle times 8ns/10ns/12ns/l5ns/20ns/25ns Commercial 12ns/15ns/20ns/25ns/35ns Military TTL compatible I/O Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B


    OCR Scan     		PDF QS8888 16Kx4 8ns/10ns/12ns/l5ns/20ns/25ns 12ns/15ns/20ns/25ns/35ns MIL-STD-883, 22-pin 24-pin QS8888

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS MEMORY PRODUCTS THMS12f 620Z-25,-35 I D E S C R IP T IO N I The THMS121620Z is a 16,384 words by 12 bits static RAM module constructed on a double sided PC board using three TC55417J 16Kx4 static RAMs in SOJ packages. The THMS121620Z is offered in a 40 pin 500 mil zip module suitable for


    OCR Scan     		PDF THMS12f 620Z-25 THMS121620Z TC55417J 16Kx4) THMS121620Z-25 THMS121620Z-35

    16kx4

    Abstract: 7M464S85 IDT6167 7M464
    Text: i 64K 16K x 4 CMOS STATIC RAMPAK Intentateci Dev ice Technology. Inc IDT7M464 IDT8M464 FEATURES: • • • • • • • • • • • ID T7M 464 e q u iva le n t to JE D E C stan dard 16Kx4 m o n o lith ic RAM 65,536 b it C M O S statis RAM m od ule w ith d e c o u p lin g


    OCR Scan     		PDF IDT7M464 IDT8M464 16Kx4 55/65/85ns 65/85/100ns IDT8M464 IDT6167s 7M464S85 IDT6167 7M464

    MIL-STD-833C

    Abstract: 1625M
    Text: mmos IMS 1605M: IMS 1625M: IMS 1629M: IMS 1626/7M: IMS 1635M: IMS 1695M: 64K x 1 16Kx4 16K x 4 with Output Enable 16K x 4 with Separate l/Os 8K x 8 8K x 9 Advance Information FEATURES • INMOS' Very High Speed Double Metal CMOS • Advanced Process-1.2 Micron Design Rules


    OCR Scan     		PDF 1605M: 1625M: 1629M: 1626/7M: 1635M: 1695M: 16Kx4 IMS16X5M MIL-STD-833C MIL-STD-833C 1625M

    Untitled

    Abstract: No abstract text available
    Text: QS8885, QS8886 High-Speed CMOS 16Kx4 SRAM with Output Enable Q High Speed Access and Cycle times 8ns/1 Ons/12ns/15ns/20ns/25ns Commercial 12ns/15ns/20ns/25ns/35ns Military TTL compatible I/O Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B


    OCR Scan     		PDF QS8885, QS8886 16Kx4 Ons/12ns/15ns/20ns/25ns 12ns/15ns/20ns/25ns/35ns MIL-STD-883, S8885 S8886 24-pin

    Untitled

    Abstract: No abstract text available
    Text: MDI EDH816H16C25/35/45 High Speed 256K SRAM Module 16Kx16 Static RAM CMOS, High Speed Module Features The EDH816H16C is a 256K bithigh speed CMOS Static RAM module based on four 16Kx4 Static RAMs in leadless chip carriers, mounted on a multilayered ceramic substrate.


    OCR Scan     		PDF EDH816H16C25/35/45 16Kx16 EDH816H16C 16Kx4 MIL-STD-883C, EDH316H16C25/35/45 EDH816H16C2S/35/45

    64 CERAMIC LEADLESS CHIP CARRIER LCC

    Abstract: EDI8417C35LB EDI8417C35QB EDI8417C45LB EDI8417C45QB EDI8417C55LB EDI8417C55QB
    Text: zanni ^ I e“Monolithic ss3zs | T h e f u t u r e . .to d a y . 16Kx4 SRAM CMOS, High Speed Monolithic Features The EDI8417C is a 65,536-Bit high speed CMOS Static RAM organized as 16Kx4. The EDI8417C features fully static operation, requiring no external clocks or timing strobes, and


    OCR Scan     		PDF 16Kx4 EDI8417C 536-Bit 16Kx4. EDI8417C35QB EDI8417C45QB EDI8417C55QB EDI8417C35LB 64 CERAMIC LEADLESS CHIP CARRIER LCC EDI8417C45LB EDI8417C55LB

    THMS121620Z-25

    Abstract: THMS121620Z-35 CA102
    Text: TOSHIBA MOS MEMORY PRODUCTS THMSI 21620Z-25.-35 ¡description ] The T H M S 121620 Z is a 16,384 words by 12 bits static RAM module con s t r u c t e d on a do u b l e sided PC board using three T C55417J 16Kx4 static RAMs in SOJ packages. The T H M S 121620 Z is offered in a 40 pin 500 mil zip mod u l e s uitable for


    OCR Scan     		PDF THMS121620Z-25 THMS121620 TC55417J 16Kx4) THMS121620Z TEMS121620Z-25 THMS121620Z-35 THMS12 CA102

    c5t transistor

    Abstract: QS8886 16kx4 8886 bit-slice
    Text: Q S8885, QS8886 High-Speed CMOS 16Kx4 SRAM with Output Enable Q High Speed Access and Cycle times 8ns/1 Ons/12ns/15ns/20ns/25ns Commercial 12ns/15ns/20ns/25ns/35ns Military TTL compatible I/O Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B


    OCR Scan     		PDF QS8885, QS8886 16Kx4 QS8885 Ons/12ns/15ns/20ns/25ns 12ns/15ns/20ns/25ns/35ns MIL-STD-883, 24-pin c5t transistor QS8886 8886 bit-slice

    QS8888

    Abstract: No abstract text available
    Text: QS8888 Q High-Speed CMOS 16Kx4 SRAM with Common I/O Q S8888 F E A T U R E S /B E N E F IT S • • • • • • High Speed Access and Cycle times 8ns/10ns/12ns/15ns/20ns/25ns Commercial 12ns/15ns/20ns/25ns/35ns Military TTL compatible I/O Low power, high-speed QCMOS technology


    OCR Scan     		PDF QS8888 16Kx4 8ns/10ns/12ns/15ns/20ns/25ns 12ns/15ns/20ns/25ns/35ns MIL-STD-883, 22-pin 24-pin QS8888

    Untitled

    Abstract: No abstract text available
    Text: EDI816H16C 2 5 / 35/45 ^ E D Module I Th e fu tu re . . . today. 16Kx16 SRAM CMOS, High Speed Module The EDI816H16C is a 256K bit High Speed, CMOS Static RAM module based on four 16Kx4 Static RAMs in leadless Chip Carriers, mounted on a multilayered ceramic substrate.


    OCR Scan     		PDF EDI816H16C 16Kx16 EDI816H16C 16Kx4 AM-00019 EDH816H16C-25CC-Z EDH816H16C-35CC-Z EDH816H16C-45CC-Z EDH816H16C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS MEMORY PRODUCTS T H M S 16 1620Z-25,-35 ¡DESCRIPTION The T H M S 1 6 1 6 2 0 Z is a 16,384 words by 16 bits static RAM module constr u c t e d on a double sided PC board using four TC55417J 16KX4 static RAMs in SOJ packages. The T H M S 1 6 1 6 2 0 Z is o ffered in a 40 pin 500 mil zip m o dule suitable for


    OCR Scan     		PDF 1620Z-25 TC55417J 16KX4) 1620Z DQO-DQ15 THMS161620Z-25

    Untitled

    Abstract: No abstract text available
    Text: II II High Performance 16Kx4 CMOS SRAM AS7C188 AS7C186 16Kx4 CMOS SRAM Common I/O FEATURES • O rganization: 16,384 w ords x 4 bits • High Speed: • Com pletely static memory. No clocks or timing strobe required. • Equal access and cycle times •


    OCR Scan     		PDF 16Kx4 AS7C188 AS7C186 16Kx4 22/24-pin 20/25/30/35/45ns 440mW 110mW