Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K BAND MESFET S PARAMETER Search Results

    K BAND MESFET S PARAMETER Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    K BAND MESFET S PARAMETER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATF-35176

    Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
    Text: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 5091-8819E 5968-3629E ATF-35176 ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band

    NE6501077

    Abstract: NEC Microwave Semiconductors
    Text: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage


    Original     		PDF NE6501077 NE6501077 24-Hour NEC Microwave Semiconductors

    NEC Microwave Semiconductors

    Abstract: No abstract text available
    Text: L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%


    Original     		PDF NE6500496 NE6500496 24-Hour NEC Microwave Semiconductors

    NE6500496

    Abstract: 173300 NEC Microwave Semiconductors
    Text: L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%


    Original     		PDF NE6500496 NE6500496 24-Hour 173300 NEC Microwave Semiconductors

    NE6500496

    Abstract: NEC Microwave Semiconductors
    Text: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage


    Original     		PDF NE6500496 NE6500496 24-Hour NEC Microwave Semiconductors

    NE6501077

    Abstract: NEC Microwave Semiconductors nec microwave
    Text: L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY: 40%


    Original     		PDF NE6501077 NE6501077 24-Hour NEC Microwave Semiconductors nec microwave

    ka band lna

    Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
    Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for


    Original     		PDF

    NE70083

    Abstract: 2SK353 DS 3107 NE700 2sk mesfet 1S121 2sk 353
    Text: N E C / CALIFORNIA 1SE NEC D fa427414 O G O l b S l 1 T - 3 1-2 5 " LOW NOISE Ku-K BAND GaAs MESFET NE700 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW C O S T The NE700 is a low cost GaAs FET featuring low noise figures and high associated gains thru 18 GHz.


    OCR Scan     		PDF fa427414 NE700 NE70000 NE70083. NE70083-4 NE70083 2SK353 DS 3107 2sk mesfet 1S121 2sk 353

    ES1821

    Abstract: M 0737
    Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821 B-30 POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS Units in mm • C L A S S A OR AB OPERATION P A C K A G E OUTLIN E T-79 • HIGH OUTPUT POW ER • HIGH GAIN • HIGH POW ER ADDED EFFICIENCY • PARTIALLY M ATCHED


    OCR Scan     		PDF NES1821 1821B-30 ES1821 M 0737

    NE76084

    Abstract: NE760 NE76000 NE76083A S221 y427
    Text: N E C / CALIFORNIA 1SE D NEC □4S7414 G D O l t m LOW NOISE Ku-K BAND G aAs MESFET 7 - r - 3 h 4 S NE760 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz The NE76000 provides a low noise figure and high associated


    OCR Scan     		PDF 4E7414 NE760 NE76000 NE76084 NE76083A S221 y427

    LTA 703 S

    Abstract: EM 408 gps beta e 555
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:


    OCR Scan     		PDF NE721S01 NE721S01 24-Hour LTA 703 S EM 408 gps beta e 555

    NE800495-4

    Abstract: NE8004 NE800495-5 NE800495-7
    Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES


    OCR Scan     		PDF NE8004 800495-X vol56 S12S21| NE800495-4 NE800495-5 NE800495-7

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & A S SO C IA T E D GAIN v s. FR EQ U EN C Y Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 G Hz HIGH ASSOCIATED GAIN m G a = 9.5 dB T Y P at f = 12 G Hz Lg = 0.3 |_im, Wg = 280 |_im


    OCR Scan     		PDF NE71300 NE71300 NE71300N NE71300M NE71300L 24-Hour

    NE67383

    Abstract: No abstract text available
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 N O IS E F IG U R E A N D A S S O C IA T E D G A IN vs. FR E Q U E N C Y FEATURES VERY HIGH fMAX: 100 GHz LOW NOISE FIGURE 0.4 0.8 1.4 1.9 3.3 dB dB dB dB dB at at at at at


    OCR Scan     		PDF NE67300 NE67383 NE67383 NE673 NE67300) channe49 lS21l IS12I

    881-1 nec

    Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
    Text: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S


    OCR Scan     		PDF b4S7414 G001S37 NE345 NE3451600 ofSiOz/SiNs72 S22-S21S12 NE345100 NE3451600 881-1 nec NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NES1417-10B NES1723-20B

    T-801

    Abstract: CLY29 CLY29-00 CLY29-05 CLY29-10
    Text: S IE M E N S CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For p rofessiona l p o w e r am plifiers • For fre q u e n c ie s from 100 M H z to 8 G H z • H erm e tic a lly s e a le d m ic ro w a v e p o w e r p a c k a g e


    OCR Scan     		PDF CLY29 CLY29-00 CLY29-05 CLY29-10 MWP-25 CLY29-nn: QS9000 T-801 CLY29 CLY29-00 CLY29-05 CLY29-10

    NEC Microwave Semiconductors

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage


    OCR Scan     		PDF NE6500496 NE6500496 IS12I IS22I2 IS12S21I NEC Microwave Semiconductors

    NE650

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES_ ; Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 10.5 dB V dsx Drain to Source Voltage


    OCR Scan     		PDF NE6501077 NE6501077 IS12I IS22I2 IS12I IS12S21I CA95054-1B17 24-Hour NE650

    152900

    Abstract: NEC Microwave Semiconductors
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 11.5 dB V dsx Drain to Source Voltage V


    OCR Scan     		PDF NE6500496 NE6500496 988-0W9 24-Hour 152900 NEC Microwave Semiconductors

    k MESFET S parameter

    Abstract: No abstract text available
    Text: 18-50 GHz GaAs MMIC Voltage Variable Attenuator ESAlpha AV850M2-00 Chip Q j t l i n e F eat ur e s • Dual Voltage Control CM CO CD ■ 35 dB Attenuation Range ■ Triple Gate 0.25 im MESFET Design ■ +10 dBm Pi dB All Attenuation States ■ 100% On-Wafer RF and DC Testing


    OCR Scan     		PDF AV850M2-00 MIL-STD-883 AV850M2-00 2/99A k MESFET S parameter

    am/PJ 0419

    Abstract: No abstract text available
    Text: ESAlpha Ka Band Power GaAs MESFET Chip AFM06P2-000 Features • 22.5 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM06P2-000 AFM06P2-000 6/99A am/PJ 0419

    PJ 0349

    Abstract: PJ 0459 jc 817 k MESFET S parameter pj 936 AFM04P2-000 S-12 ka 3525 ka 3525 a 149-188
    Text: ESAlpha Ka Band Power GaAs MESFET Chip AFM04P2-000 Features • 21 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM04P2-000 DC-40 AFM04P2-000 Through-subs151 6/99A PJ 0349 PJ 0459 jc 817 k MESFET S parameter pj 936 S-12 ka 3525 ka 3525 a 149-188

    PJ 0519

    Abstract: gm 4511 am/PJ 0529 Characteristic of mesfet AFM08P2-000 S-12 am/PJ 0519
    Text: ESAlpha Ka Band Power GaAs MESFET Chip A F M 08P 2-000 Features • 24 dBm Output Power @ 18 GHz ■ High Associated Gain, 8.5 dB @ 18 GHz ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -40 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM08P2-000 DC-40 AFM08P2-000 6/99A PJ 0519 gm 4511 am/PJ 0529 Characteristic of mesfet S-12 am/PJ 0519

    Untitled

    Abstract: No abstract text available
    Text: 5 W 14 GHz INTERNALLY NEZ1414-5E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 37.0 dBm TYP PACKAGE OUTLINE X-17 HIGH LINEAR GAIN: 7.0 dB TYP HIGH EFFICIENCY: 30% TYP INDUSTRY STANDARD PACKAGING INTERNALLY MATCHED FOR OPTIMUM


    OCR Scan     		PDF NEZ1414-5E