NE67383
Abstract: NE67300 2SK407 NEC NE67300 MESFET 8S222 NE673 NEC NE67383
Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • VERY HIGH fMAX: 100 GHz 20 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER Triple Epitaxial Technology
|
Original
|
PDF
|
NE67300
NE67383
NE673
24-Hour
NE67383
NE67300
2SK407
NEC NE67300 MESFET
8S222
NEC NE67383
|
NE67383
Abstract: No abstract text available
Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: NE67300 NE67383 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz 3.3 dB at 26 GHz
|
OCR Scan
|
PDF
|
NE67300
NE67383
NE67383
NE673
NE67300)
|
NE67383
Abstract: No abstract text available
Text: NEC LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m a x : 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz
|
OCR Scan
|
PDF
|
NE67300
NE67383
NE67383
NE673
|
NE67383
Abstract: No abstract text available
Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1
|
OCR Scan
|
PDF
|
NE33200
NE67300
NE71300
NE76000
NE76100
NE76083A
NE33284A
NE25118
NE25139
NE25339
NE67383
|
NE67383
Abstract: No abstract text available
Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 N O IS E F IG U R E A N D A S S O C IA T E D G A IN vs. FR E Q U E N C Y FEATURES VERY HIGH fMAX: 100 GHz LOW NOISE FIGURE 0.4 0.8 1.4 1.9 3.3 dB dB dB dB dB at at at at at
|
OCR Scan
|
PDF
|
NE67300
NE67383
NE67383
NE673
NE67300)
channe49
lS21l
IS12I
|
SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
|
OCR Scan
|
PDF
|
AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
|
ne71084
Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0
|
OCR Scan
|
PDF
|
NE24200
NE32400
NE33200
NE67300
NE71000
NE76000
NE76100
NE24283B
NE67383
NE71083
ne71084
NE76084
NE32684A
NE72000
NE32584
ne72089
|
ne71084
Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package
|
OCR Scan
|
PDF
|
S3200
NE87300
NE76000
NE24283B
ne71084
GaAs MESFET
NE25139
NE4200
NE32684A
NE71000
71083
ne72089
NE72000
MESFET Application
|
