Untitled
Abstract: No abstract text available
Text: MEMS – Oscillator JSO LC series Low Power H CMOS Output This document contains useful information how to handle Jauch JSO LC MEMS oscillators ESD handling Jauch JSO LC oscillators are semiconductor devices, that should be protected against electrostatic discharge during transportation, storage, manufacturing process and assembled
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JESD625
JESD22)
J-STD020:
MIL-STD-883F,
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Untitled
Abstract: No abstract text available
Text: MEMS – Oscillator JSO LC series Low Power H CMOS Output Edge Control The new Jauch JSO LC oscillator series offers a unique feature – Edge Control ! Edge Control is an advanced feature to control the EMI dissipation, or drive high capacitive loads by selecting the edge slew rate of the oscillators output signal depending on the
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83MHz
83MHz.
137MHz
115MHz)
137MHz)
125MHz
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JSO LC Serie
Abstract: No abstract text available
Text: MEMS-Oscillator • JSO LC series · 2.5 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification n extended shock & vibration resistance
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JSO21
JSO LC Serie
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JSO LC Serie
Abstract: No abstract text available
Text: MEMS-Oscillator • JSO LC series · 2.8 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification n extended shock & vibration resistance
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JSO21
JSO LC Serie
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JSO LC Serie
Abstract: No abstract text available
Text: MEMS-Oscillator • JSO LC series · 3.3 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification n extended shock & vibration resistance
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JSO21
JSO LC Serie
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JSO LC Serie
Abstract: No abstract text available
Text: MEMS-Oscillator • JSO LC series · 2.5 V ~ 3.3 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification
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JSO21
JSO LC Serie
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JSO LC Serie
Abstract: No abstract text available
Text: MEMS-Oscillator • JSO LC series · 3.0 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification n extended shock & vibration resistance
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JSO21
JSO LC Serie
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JSO LC Serie
Abstract: No abstract text available
Text: MEMS-Oscillator • JSO LC series · 1.8 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification n extended shock & vibration resistance
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JSO21
JSO LC Serie
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Untitled
Abstract: No abstract text available
Text: THE SPECIALISTS FOR FREQUENCY CONTROL AND BATTERY TECHNOLOGY MEMS TIMING MEMS OSCILLATORS NEW AT JAUCH: MEMS OSCILLATORS EASY TO CONFIGURE: CHECK OUT OUR WEBSITE PRODUCT FEATURES n Silicon MEMS resonator based oscillators n Frequency n Best range 1 MHz ~ 137 MHz
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Untitled
Abstract: No abstract text available
Text: Jauch Lead Free and RoHS matrix type Product series S HC49/U / SSx Quartz Crystal RoHS compliant RoHS exemption China RoHS compliant reflow soldering peak temperature wave soldering peak temperature Pb Cd Hg Cr6 PBB & PBDE Sn, Cu yes - yes - 260°C no no
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HC49/U)
MTF32
MMTF32
JVD75A
JRO32
MTF38
2011/65/EU
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H24A1
Abstract: H24A2 ST2006 ST4004 J279 ST2038
Text: PHOTOTRANSISTOR OPTOCOUPLERS 0PTOELECTBOHICS H24A1 H24A2 PACKAGE DIMENSIONS DESCRIPTION The H24A series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a iow-cost plastic package with
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H24A1
H24A2
E51868
ST4004
ST2006
ST2D36
ST2037
ST2038
3T2039
J279
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Untitled
Abstract: No abstract text available
Text: m NEREX CM50BU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Four IGBTMOD U-Series Module 50 Amperes/1200 Volts D escription: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists
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CM50BU-24H
Amperes/1200
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2N2369A
Abstract: 2n4449
Text: SEMICONUUU I UK TECHNICAL DATA 2N2369AJAN, JTX, JTXV, JANS 2N3227JAN, JTX, JTXV 2N4449JAN, JTX, JTXV Processed per MIL-S-19500/317 NPN Silicon Small-Signal Transistors designed for general-purpose switching applications M A X IM U M R A T IN G S Rating Symbol
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2N2369AJAN,
2N3227JAN,
2N4449JAN,
MIL-S-19500/317
2N2369A
2N3227
2N4449
2N4449JAN
2N2369A,
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2N4041
Abstract: 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80
Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series
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ZT80-ZT180
100mA
Series-ZT180
ZT110-ZT280
CV7373)
CV7644)
CV7371)
CV7372)
ZT183.
ZT184
2N4041
2N4429
BFS98
2N3632
2N4127
CV7644
J 2N2222A
CV7371
CV7373
ZT80
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Untitled
Abstract: No abstract text available
Text: i q ä l j ! i Discrete POW ER & Signal Technologies a ^ i Bi'MICDNPÜCTPR BCV27 M a rk : F F NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05.
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BCV27
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Untitled
Abstract: No abstract text available
Text: f Z 7 SGS-THOMSON SD1433 ^7#. K M « « ® « ! RF & MICROWAVE TRANSISTO RS UHF MOBILE APPLICATIONS • . ■ . ■ . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER p OUT = 10 W MIN. WITH 8.0 dB GAIN dr l|—^ R> .280 4L STUD M122 epoxy sealed
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SD1433
SD1433
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH O SCILLATO R O UTPUT PO W ER : T h e N E 5 7 5 series of N P N silicon medium pow er transistors is designed to operate in amplifiers and oscillators up to 2 G H z with supply voltages up to 18 volts. Transistors in this series
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NE57500
NE57510
NE57500,
NES7500
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2n3866 sos
Abstract: 2n4041 2N4127 BFS98 2n3733 BFS96 BFS97 BSV33 ZT180 ZT181
Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 25°C amb. mW VCE(sat) max. volts volts volts volts BFS96 BFS97 B FS98 -6 0 -6 0 -8 0 -3 0 -4 0 -6 0 -5 -5 -5 500 500 500
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BFS96
BFS97
BFS98
-150t
BFS59-61
ZTX510
BSV33
2n3866 sos
2n4041
2N4127
2n3733
ZT180
ZT181
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2SC2570
Abstract: 2sc2570 transistor NE02132
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,
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NE021
NE02107
PACKAGEOUTUNE33
OT-23)
b427525
00b5b07
2SC2570
2sc2570 transistor
NE02132
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IRF 1630
Abstract: LT1080 CP
Text: / u r m TECHNOLOGY \<Æ LT1039/LT1039-16 \J RS232 Driver/Receiver with Shutdown F € flT U ft€ S D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1039 is atriple RS232 driver/receiver which includes SHUTDOWN. Each receiver w ill accept up to ±30V input
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RS232
MC145406
LT1039/LT1039-16
LT1039
60TT0M
3009-3U
IRF 1630
LT1080 CP
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MJ 15007 transistor
Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz
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NE46100
NE46134
NE46134
NE461
b427525
b5L37
OT-89)
MJ 15007 transistor
MJ 15007
NE41634
transistor XM SOT-89
Transistor 33735
low noise transistor bc 179
NE46134 equivalent
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magnetic sensor an-201
Abstract: hctc
Text: iC-NMK if f if ll SERIAL SWITCHED MR SENSOR FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Magneto resistors in bridge configuration Analog switches at the sensor outputs Sensor activation by serial input data Internal shift register for chain connection
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D-55294
magnetic sensor an-201
hctc
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2SC3544
Abstract: IC sn 74 ls 2000
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry
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NE944
IS12I
IS12S21I
b427525
00L5770
2SC3544
IC sn 74 ls 2000
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smd code book 13t
Abstract: transistor SMD 13t 13t smd transistor SIPMOS application note SMD marking DHS 2128x
Text: • fl El 3 5 1. GS G 1 0 3 4 1 0 bS7 . SIE M E N S T rilith lC BTS 775 P re lim in a ry D ata Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications
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El35tiGS
010341D
235b05
010342b
P-DSO-28-9
2128X
smd code book 13t
transistor SMD 13t
13t smd transistor
SIPMOS application note
SMD marking DHS
2128x
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