SEN 1327
Abstract: CI06B pnp phototransistor H11A10 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor H11B1 4N38
Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 4 .4 .4 .4 1.0
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H11A10
H11AA1
H11AA2
H11D1
H11D2
H11D3
H11D4
4N38A
H11B1
H11B2
SEN 1327
CI06B
pnp phototransistor
1307 TRANSISTOR
D34C1
SCR ci06b
"Photo Interrupter" dual transistor
4N38
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Untitled
Abstract: No abstract text available
Text: Generic Optoisoiator Specifications MCT2, MCT2E, MCT26 Optoisoiator GaAs Infrared Emitting Diode Phototransistor T h e MCT2, M CT2E a n d MCT26 are gallium arsen id e, in frared em itting dio d e coupled with a silicon phototransistor in a du al in-line package. T h e se devices are also available in
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MCT26
MCT26
above25SC
H11AG3
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H11M2
Abstract: H11M1
Text: D U A L IT Y TECHNOLOGIES CORP S7E ]> O p t o i s o l a t o r S p e c i f i c a t i o n s _ 7L>bba¿i ooonagp t4s maty H11M1, H11M2 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated SCR T h e H 11M 1 an d H 11 M2 contain a gallium -alum inum -arsenide, in frared
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H11M1,
H11M2
74bb651
H11M2
H11M1
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4N29-4N33
Abstract: No abstract text available
Text: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E
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4N29A,
4N32A,
E51868
0110b
74bbflSl
4N29-4N33
4N29-4N33
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340 opto isolator
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode
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74bbflSl
H11J1-H11J5
74bbfl51
0DQ4S11
340 opto isolator
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M0c3020-M0c3023
Abstract: M0C3023 M0C3020 C3023 ES1868 MOC3020 MOC3021 MOC3022 MOC3023 infrared emitting CIRCUIT
Text: G E SOLI» STATE g u f »/W W » V» 01 *- DE 13fl?SDfll G D n ? b h b | Optoelectronic Specifications - MÍ - 37 Photon Coupled Isolator M0c3020-M0c3023 G a As Infrared E m itting D iode & L ight Activated T riac D river The GE Solid State M0c3020-M0c3023 series consists of a gallium arsenide
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0D117bb
M0c3020-M0c3023
MOC3020-MC
C3023
MOC3020
MOC3021
MOC3022
MOC3023
M0c3020-M0c3023
M0C3023
M0C3020
ES1868
infrared emitting CIRCUIT
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GE SC160B triac
Abstract: Y4W diode y4w transistor H11AG3 y4w surface transistor H11AG2 H11AG1 DIODE Y4W SC160B y4w 7
Text: G E S O L I» 01 STATE DE § 3 075D Û 1 D 0 M 7 0 5 optoelectronic specifications. T - H l - Z 3 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 G a A1 A s In fra re d E m ittin g D io d e & N P N S ilicon P h o to -T ra n s isto r The G E Solid State H IIA G series consists o f a gallium arsenide infrared
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3fl750fll
T-w-83
H11AG1,
H11AG2,
H11AG3
1N4148
H11AG1
GE SC160B triac
Y4W diode
y4w transistor
H11AG3
y4w surface transistor
H11AG2
DIODE Y4W
SC160B
y4w 7
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photo transistor til 78
Abstract: 74S00 74H00 H74A1 transistor cross ref 74H00 TTL TTL 74H00
Text: f G E SOLID STATE 01 DE § 3S7S0fll 001^755 fl | Optoelectronic Specification*. T-V/-S3 Photon Coupled Isolator H74A1 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor TTL Interface T he G E Solid State H74A1 provides logic to logic optical interfacing of TT L gates with
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H74A1
H74A1
74H00
74S00
500VDc)
photo transistor til 78
transistor cross ref
74H00 TTL
TTL 74H00
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19856 D Optoelectronic Specifications- - HARRIS SEMICOND SECTOR 37E D • 4302271 aQ273ia b B Photon Coupled Isolator GE3020-GE3023
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aQ273ia
GE3020-GE3023
GE3020-GE3023
isola02
S-42662
S-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SO LID 01E STATE 1 9 8 10 D Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D H 4302271 0G27272 A E l HAS Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Em itting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H24B series consists of a gallium arsenide
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0G27272
H24B1-H24B2
E51868
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: flU A L IT Y TECH N OLOGIES CORP S7E ]> 0004344 Generic Optoisolator Specifications _ 3bT • flT Y MCT2, MCT2E, MCT26 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e MCT2, M CT2E a n d MCT26 are gallium arsen id e, infrared em itting diode coupled with a silicon phototransistor
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MCT26
MCT26
E51868
0110b
H11AG3
DGG4345
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 0 1E 19772 Optoelectronic Specifications -T - W J - Î 3 HARRI S SEMI COND SECTOR 3 7E D • 4305571 0057534 0 ■ Photon Coupled Isolator SL5504 The GE Solid State SL5504 consists of a gallium arsenide infrared emitting
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SL5504
SL5504
C96-551
92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E optoelectronic S p e c ific a tio n s_ HARRIS SEMICOND SECTOR 19734 T W i-SS 37E D 43G2271 0 D 2 7 n t IH A S 7 Photon Coupled Isolator H11G3 Ga As Infrared Emitting Diode & NPN Silicon Darlington Connected P hototransistor
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43G2271
H11G3
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: HARRIS SENICOND SECTOR 37E » 4305E71 005715b b • HAS O p to ele c tro n ic S p e c ific a tio n s -T ‘- V / 'Í 3 Photon Coupled Isolator H11A520-H11A550 -H11A5100. Ga As Infrared E m itting D iode & NPN Silicon Photo-T ransistor The G E Solid State H 11A520, H 11A550 and H 11A 5100 consist of a
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4305E71
005715b
H11A520-H11A550
-H11A5100.
11A520,
11A550
S-42662
92CS-429S1
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M0C3023
Abstract: M0C3020 MOC3022 CONTROL CIRCUIT M0c3020-M0c3023 triac light switch 0C302
Text: G E SOLID STATE g u r V w i V» *— 01 -w -w »— — DE 1 3ñ?SQfll 00117bb b | Optoelectronic Specifications Mi-57 Photon Coupled Isolator M0c3020-M0c3023 G a As Infrared Emitting Diode & Light Activated Triac Driver The GE Solid State M 0c3020-M0c3023 series consists of a gallium arsenide
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00117bb
Mi-57
M0c3020-M0c3023
0c3020-M0c3023
MOC3020
MOC3021
MOC3022
MOC3023
M0C3023
M0C3020
MOC3022 CONTROL CIRCUIT
M0c3020-M0c3023
triac light switch
0C302
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GE SC160B triac
Abstract: C203B varistor 7k 270 H11AG1 H11AG2 H11AG3 dt230h
Text: “g e solid state 01 De | 3 0 7 5 0 0 1 0 0 1 ^ 7 0 2 o p t o e le c t r o n ic S p e c if ic a t io n s T-qi-83 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 j-1 . Ga Al As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H llAG series consists of a gallium arsenide infrared 3
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T-qi-83
H11AG1,
H11AG2,
H11AG3
H11AG1
GE SC160B triac
C203B
varistor 7k 270
H11AG2
H11AG3
dt230h
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Untitled
Abstract: No abstract text available
Text: 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ HARRI S SEMICOND SECTOR 01E 4302271 37E Photon Coupled Isolator H11D1-H11D4 0G271ÖÖ A B C D E F G H J K V N P R S . rV i& absolute maximum ratings: 25°C W INFRARED EMITTING DIODE
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H11D1-H11D4
0G271Ã
33mW/Â
92CS-42662
92CS-429S1
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H24A1
Abstract: H24A2 ST2006 ST4004 J279 ST2038
Text: PHOTOTRANSISTOR OPTOCOUPLERS 0PTOELECTBOHICS H24A1 H24A2 PACKAGE DIMENSIONS DESCRIPTION The H24A series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a iow-cost plastic package with
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H24A1
H24A2
E51868
ST4004
ST2006
ST2D36
ST2037
ST2038
3T2039
J279
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1J2H
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e H l 1J series consists o f a gallium a rse n id e in fra re d em itting diode co upled with a light activated silicon bilateral switch, w hich functions
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H11J1-H11J5
1J2H
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IT 1172
Abstract: TSC 304-15
Text: SAFETY R E L IA B IL IT Y A N D S A F E T Y O ptoelectronics may be used in system s in w hich personal safety o r o th er hazard m ay be involved. All com ponents, including sem iconductor devices, have the potential o f failing o r d egrading in w ays that could im pair the proper operation o f such system s. W ell-know n circuit techniques are available to
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136S6
Abstract: CNY51 DIODE RK 306 TA-100
Text: G E SOLID STATE □1 Optoelectronic Specifications 3fi750fll oonaso b I DEf T -4 1 -8 3 Photon Coupled Isolator CNY51 19- Ga As Infrared Em itting Diode & NPN Silicon Photo-T ransistor -— The G E Solid State CNY51 consists of a gallium arsenide, infrared
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3fi750fll
CNY51
CNY51
3fl75Dfll
136S6
DIODE RK 306
TA-100
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the light activated scr
Abstract: GE SCR 1000 H74C2 scr 6 Ampere ge scr 150a TA 70 04 scr H74C1 scr de 50 A k10e SCR 406
Text: G E S O LI» S T A T E DI DEj3a750ûl 0 D l ci7SM 1 | Optoelectronic Specifications. -W I-S 7 Photon Coupled Isolator H74C1, H74C2 Ga As Infrared Emitting Diode & Light Activated SCR S E A T IN G N ilL L IM E T ' 3S T T L Interface . M IN . MAX. M IN . The GE Solid State H74C1 and H74C2 are gallium arsenide
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3fl750fll
H74C1,
H74C2
H74C1
H74C2
74H00
74S00
AM00E
the light activated scr
GE SCR 1000
scr 6 Ampere
ge scr 150a
TA 70 04 scr
scr de 50 A
k10e
SCR 406
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diode 6t6
Abstract: H24B1 H24B2
Text: G E SOLID STATE o u r «/vw « -wi — -— 01 - — DE|3fi?SDfil D D n a i D S | Optoelectronic Specifications. T - q \ ' Z $ Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The G E Solid State H24B series consists o f a gallium arsenide
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H24B1-H24B2
E51868
00pps
diode 6t6
H24B1
H24B2
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SL901
Abstract: 75D01 SL5511 "GE Solid state"
Text: E SOLI» STATE □1 DE|3ñ7S0ñl 0D n 7 7 t 1 | Optoelectronic Specifications i - S 3 r w Photon Coupled Isolator SL5511 The G E Solid State SL5511 consists o f a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. T he GE
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D0n77b
SL5511
SL5511
SL55U
C96-551
100X1
SL901
75D01
"GE Solid state"
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