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    JRM 45 Search Results

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    JRM 45 Price and Stock

    NSI JRM45SLT

    Screws 12-24 X 1 Rh Sl MS St-zn (Jar 100)
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    NAC JRM45SLT 100
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    JRM 45 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U125D

    Abstract: c5856 T1-6TCUP U12B SMA200UP C71B RC0603 U740 AD9861 CC0805
    Text: 4 3 1 2 REVISIONS D DVIN1 TB3 L9 1 TP23 RED JP4 LC0805 DRVDD BCASE TB3 VAL C11 DNP 16V BCASE C12 10UF 10V CC0805 C20 B Revision of pluto64dual Rev A. 0306.04 DATE APPROVED JRM C alter component package JP50, C43. misc labeling. spread J11,J12 0308.18 JRM D


    Original     		PDF LC0805 CC0805 pluto64dual RC0805 U125D c5856 T1-6TCUP U12B SMA200UP C71B RC0603 U740 AD9861 CC0805

    DA12 16

    Abstract: SK1N1 T1-1TCUP RX433 n1 sot23 SDA04HOSK RC0603 Hp TX2 SOT23 2A8 SOT23-BEC
    Text: 4 3 1 2 REVISIONS JP9 DVDD JP15 RXEN_SYNC JP14 D REV DESCRIPTION DATE APPROVED B Customer Version NO Socket 0307.09 JRM D JP58 AWG_RXTXEN 1 TX0 2 RX5 3 RX4 4 RX3 1 DVDD RX2 2 AWG_TXSYNC RX1 3 DSP_RXTXEN RX0 4 10K R16 RC0603 10K R8 RC0603 R9 33 RC0603 JP1 JP2


    Original     		PDF RC0603 NC7SZ125M5 DA12 16 SK1N1 T1-1TCUP RX433 n1 sot23 SDA04HOSK RC0603 Hp TX2 SOT23 2A8 SOT23-BEC

    CA5420

    Abstract: CA5420A CA5420AE CA5420AM CA5420AT CA5420E CA5420M CA5420T
    Text: HARRIS SEMICOND SECTOR blE D • fii h a r r i s 43DS271 DD4b432 bflfl « H A S CA5420 Jrm % J S E M I C O N D U C T O R M mm Low Supply Voltage, Low Input Current BiMOS Operational Amplifier Features Description • CA5420A, CA5420 at 5V Supply Voltage with Full


    OCR Scan     		PDF 43DS271 DD4b432 CA5420 CA5420A, CA5420 300nA 000Mi2) CA5420A CA5420AE CA5420AM CA5420AT CA5420E CA5420M CA5420T

    jrm 45

    Abstract: No abstract text available
    Text: REV. B MATERIAL AND DESCRIPTION SEE ECO G M - 10790 DATE BY 1 1 /2 4 /9 9 JRM FINISH JACK HOUSING: CRES 3 0 3 PER ASTM A 4 8 4 AND ASTM A 5 8 2 OR ASTM A 5 5 5 AND ASTM A 581. GOLD PLATE PER MIL—G—4 5 2 0 4 SOCKET CONTACT: BERYLLIUM COPPER PER ASTM B 196 A N D /O R ASTM B 197.


    OCR Scan     		PDF

    022 JRC

    Abstract: JRC 022 74221 74423 ctct
    Text: — 230 — 74423 Dual R e trig g e ra b le S ingle S h o t to td CCfe zB ía. i2j^nininininiriLf •A I 1 IQ 20 2 Jrm/ GMO ?a m OA, B í O X * * f t * I HS;3C LT v^ ¿ è CLR t mm H i z i x i v otw= 0.45RT.CT f 5 k S < R l < 2 6 0 k ^ \ lOOOpFäCr RCTRIQGER PULSE


    OCR Scan     		PDF 260kQ\ 45Rt-Ct 022 JRC JRC 022 74221 74423 ctct

    x-band magnetron

    Abstract: magnetron ns
    Text: 95-01-12 14:39 i-ooo r.ud. M ¡3 3 ' 2 H 3 | ^ H B I P i'0 d u c t bulletin y\ 133 '1 X -B a n d M a g n etro n GENERAL DESCRIPTION M133‘7 is a fixed frequency pulsed type X-band magnetron designed to operate in the frequency range of ^ 1 0 5 t^n y jrM H z with a peak output power o f SO kW. It is packaged and waveguide output


    OCR Scan     		PDF /337J x-band magnetron magnetron ns

    2sk1603

    Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
    Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2sk1603 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57752 430-450MHZ, 12.5V, 13W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in mm ©HK- —© P IN : © P in : RF INPUT © V C C 1 : 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY © VC C 3 : 3nd. DC SUPPLY ®Po : RF O UTPUT


    OCR Scan     		PDF M57752 430-450MHZ,

    FST6035

    Abstract: FST6040 FST6045 FST6050
    Text: Schottky Powermod FST 60 P Millimeter Dim. Inches Minimum Maximum minimum Maximum Notes A C E F G H J K L M N P Microsemi Catalog Number Working Peak Reverse Voltage FST6035* FST6040* FST6045» FST6050* 35V 40V 45V 50V 1.995 0.495 0.990 2.390 1.4-90 0.120


    OCR Scan     		PDF FST6035* FST6040* FST6045* FST6050Â C-183 FST6035 FST6040 FST6045 FST6050

    k2038

    Abstract: K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222
    Text: Power MOS FET Lineup Vdss = 60 ~ 200 V Voss (V) Id (A) S eriea lineup ir-M OS II ff-MOS L2-s*M OS III 0.8 1.0 2.0 T 2 S K 1 112(0.16) ▼ 2SJ183(0 35) 5 .0 •2S K 6 72(0.2) ♦ 2 S J 147 (0.20) O 2SJ224(0.2) ♦ 2 S K 5 3 2 (0.085) 10 12 O2SJ238(0.85) >2SK1717(0.35)


    OCR Scan     		PDF 2SJ183 2SK1078 O2SJ238 2SK1717 2SK1719 2SJ239I0 2SJ315 2SJ36O 2SK2231 2SJ377 k2038 K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222

    Untitled

    Abstract: No abstract text available
    Text: FAST RECOVERY DIODE 30DF4 30DF6 3.3A /400— 6 0 0 V /trr : 400nsec FEATURES 5.8 .23 DIA • Super Fast Recovery -f °Low Forward Voltage Drop 1.5Í-059) DIA 1.3(.051) o Low Power Loss, High Efficiency 21(.83) ° High Surge Capability MIN ° 100 Volts through 600 Volts Types Available


    OCR Scan     		PDF 30DF4 30DF6 400nsec 30DF4 bblS123 0QG21SS

    jrm 45

    Abstract: jrm A 45 DIODE 1B 1b005 diode 60 31 1B01S 1B02S 1B04S
    Text: International I ö R Rectifier Bridges Fax on Case Demand Outline Number Key I fsm Part Number VRRM lo @ T C V (A) W Vfm (V) (A) 50 Hi (A) tOHz (AJ R »< ' l * {mW Notes Single Phase Diode D- 71 A vaila b le in E l 50 1 40 30 31 60 5 6 7 15 1B01S 100 1


    OCR Scan     		PDF 1B01S 1B02S 1B04S 1B005 1KAB05H fKAB10E 1KAB10EL3 jrm 45 jrm A 45 DIODE 1B diode 60 31

    jrm 45

    Abstract: 30VQ04 30VQ03 30VQ03F 30VQ04F
    Text: SCHOTTKY BARRIER DIODE 30VQ03 30VQ04 30 VQ 03F 30 VQ 04F 3 .3 A / 3 0 ~ 4 0 V FEATURES • TO-251AA Case • TO-252AA Case Surface Mount Device ° Low Forward Voltage Drop » Low Power Loss ° High Surge Capability • 30 Volts thru 100 Volts Types Available


    OCR Scan     		PDF 30VQ03 30VQ04 30VQ03F 30VQ04F O-251AA T0-252AA O-252AA 38MAX 56MAXjl 30VQ03 jrm 45 30VQ04F

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE iia /3 o ~ 4 ov fio p o s q f Ìopm q FEATURES o Similar to T0-220AB Case « Fully Molded Isolation F-Type 0 Dual Diodes - Cathode Common 0low Forward Voltage Drop » Low Power Loss, High Efficiency o High Surge Capability » 20 Volts thru 100 Volts Types


    OCR Scan     		PDF T0-220AB C10P0 F10P03Q LL1S123 D002D37

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE C30P03Q C30P04Q 33A/30~40V 5.31.209 4.71.185) FEATURES • Similar to TO-247AC TO-3P) Case .626) 0 Dual Diodes - Cathode Common 3.6C.142), — 5.71.224) 5.312081 3.4U34) 20.31.800) 4.3(.169) 3.71.145) o Low Forward Voltage Drop I57(775î


    OCR Scan     		PDF C30P03Q C30P04Q 3A/30 O-247AC C30P03Q bbl51E3

    Y2550

    Abstract: 30KF50B 30KF50E
    Text: 30KF50E 30KF50B 3 3 A /5 0 0 V / trr : 70nsec FAST RECOVERY DIODE FEATU R ES 5.3{.209 4-7 185) 15.91.626) 3.6(.142)m . 1 5 .3 (.6 0 2 )^ / 3.4(.T34l o Similar to TO-247AC Case ° Ultra - Fast Recovery ° Low Forward Voltage Drop o Low Power Loss, High Efficiency


    OCR Scan     		PDF 3A/500V/trr 70nsec 30KF50E 30KF50B O-247AC 0D01S71 Y2550 30KF50B

    EC11FS1

    Abstract: 21b4 200v 3A ultra fast recovery diode EC11FS2 185L
    Text: FAST RECOVERY DIODE l . l A / 1 0 0 ~ 2 0 0 V / t r r : 30nsec EC 11FS 1 EC11FS2 FEATURES oMiniature Size, Surface Mount Device • 4.7 .185 ° Ultra - Fast Recovery * -^ _ 4 .7 (.1 6 8 )— « 4.3C .169) ] » Low Forward Voltage Drop 2.71.106) 2.3(.ft91)


    OCR Scan     		PDF lA/100 00V/trr 30nsec EC11FS1 EC11FS2 EC11FS1 bbl5123 21b4 200v 3A ultra fast recovery diode EC11FS2 185L

    jrm 45

    Abstract: 30VF60 30VF60F
    Text: FAST RECOVERY DIODE 30VF60 30VF60F 3.3A/eoov/trr :35nsec 2.38M AX .094 FEATURES 2.38M A X (.094) o TO-251AA Case o TO-252AA Case, Surface Mount Device o Ultra-Fast Recovery N O M IN A L 0.8M AX (.03) — I ° Low For weird Voltage Drop o Low Power Loss TO-252AA


    OCR Scan     		PDF A/600V/trr 35nsec 30VF60 30VF60F O-251AA O-252AA 38MAX 58MAXJ1 jrm 45 30VF60F

    FST10125

    Abstract: No abstract text available
    Text: D im . Inches M illim e te r M inim um M ax im u m Detail 6 -r Detail B MicrosemI Catalog Number FST10125* FST10130* FST10135* FST10140* FST10145* I Baseplate; Nickel plated copper; A C E F G H J K L M N P 1.995 0.495 0.990 2.390 1.490 0.120 M inim um 2.005


    OCR Scan     		PDF C-192 C-193 FST10125

    10KQ30

    Abstract: F10KQ40 fl37 10KQ30B 10KQ40 10KQ40B F10KQ30B F10KQ40B
    Text: n . / , n .nw 10KQ30 F10KQ30 10KQ40 F10KQ40 11A/30~40V 10KQ30B F10KQ30B 10KQ40B F10KQ40B CriinTTIfV RARRIFR niflRF o L H U IlK T HAHnltn IllUUt FEATURES ° Similar to T0-220AC and TO-220AB Case • Fully Molded Isolation Case F - Type ° Low Forward Voltage Drop


    OCR Scan     		PDF 10KQ40 fiokq40 1A/30 10KQ30B F10KQ30B 10KQ40B F10KQ40I T0-220AC O-220AB 10KQ30 10KQ30 F10KQ40 fl37 F10KQ40B

    F103M

    Abstract: No abstract text available
    Text: YTF633 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jr-M O Sn HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR Unit in urn DRIVE APPLICATIONS. 10.3MAK. f- ¿3.610.2 FEATURES: •Low Drain-Source ON Resistance :


    OCR Scan     		PDF YTF633 10xts -100A/ps F103M

    YTFP453

    Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
    Text: FIELD EFFECT TRANSISTOR YTFP453 SILICON N CHANNEL MOS TYPE jr-M O S n HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER ANO HOTOR Unit in aa 1&9MAX. DRIVE APPLICATIONS. 0 3 .2 ± a s ¿ & Æ FEATURES:


    OCR Scan     		PDF YTFP453 10jus -100A/W YTFP453 Field Effect Transistor Silicon N Channel MOS vdss 600

    f10p04q

    Abstract: C10P04Q jrm 45 C10P03Q F10P F10P03Q
    Text: SCHOTTKY BARRIER DIODE C10P03Q C10P04Q F10P03Q F10P04Q 11A/30~40V FEA TU R E S o Similar to T0-220AB Case « Fully Molded Isolation F-Type 0 Dual Diodes - Cathode Common 0 L o w Forward Voltage Drop » L o w Power L o s s , High Efficiency o High Surge Capability


    OCR Scan     		PDF T0-220AB C10P0 F10P03Q C10P04Q F10P04Q CMPMMF10PMQ) bblS123 f10p04q jrm 45 C10P03Q F10P

    60.0000 oscillator

    Abstract: 318180
    Text: REV «CMPTIBi D REVISED FREQ TABLE 1.0 MONITOR PART NUUER 2. 0 *- AgOTcrrATTny U Y H m t I K T B I ATTKS. HTUHS. T R I-S T A T E a 0 ELETTRI CAL CHARACTERISTICS NOIE 1 ADJUSDCNT RAM EJsZi _ 3 .1 .£ 1 ADJUSTMENT RESOJUnON 0&L a 1 .3 STABILITY a i . a i FREBUENCY v s AMBIENT


    OCR Scan     		PDF 419B-XX 275C6 063C1 SP419BD2 13goPg 60.0000 oscillator 318180