11DQ03L
Abstract: 251C LL1S123
Text: SCHOTTKY BARRIER DIODE ia 11D Q 0 3 L /sov FEATURES 2.7 .106 DIA 2.3C-091) o Miniature Size o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability 030 Volts thru 100 Volts Types Available o 52mm Inside Tape Spacing Package Available
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11DQ03L
10Xl0mm
LL1S123
0D01771
bbl5123
11DQ03L
251C
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S70 SMD
Abstract: Diode SMD SJ 22 A 2761 I smd diode se p5 Diode SMD SJ 15 DIODE 61 BP 7U46 a 2761 to-220 SCHOTTKY 20A 40V C20T04QH
Text: SCHOTTKY BARRIER DIODE C20T04QH C20T04QH-11A 2 0 A /4 0 V FEA TU RES o | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C20T04QH oTabless T0-220 : C20T04QH-11A oDual Diodes - Cathode Common O Low Forward Voltage Drop o High Surge Capability OTj=150°C operation
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0A/40V
C20T04QH
C20T04QH-11A
V8U89)
O-263AB
C20T04QH
T0-220
S70 SMD
Diode SMD SJ 22
A 2761 I
smd diode se p5
Diode SMD SJ 15
DIODE 61 BP
7U46
a 2761 to-220
SCHOTTKY 20A 40V
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE iia /3 o ~ 4 ov fio p o s q f Ìopm q FEATURES o Similar to T0-220AB Case « Fully Molded Isolation F-Type 0 Dual Diodes - Cathode Common 0low Forward Voltage Drop » Low Power Loss, High Efficiency o High Surge Capability » 20 Volts thru 100 Volts Types
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T0-220AB
C10P0
F10P03Q
LL1S123
D002D37
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11ES2
Abstract: 11ES1 11ES4 11ES6 11ES8
Text: llESl 11ES2 11ES4 11ES6 11ES8 1A /10 0 — 800V SILICON RECTIFIER DIODE FEATU R ES o Miniature Size MAX ULA ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.601024 DIA 0.54 .021) ° High Surge Capability 27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing
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A/100â
11ES1
11ES2
11ES4
11ES6
11ES8
11ES6
11ES8
LL1S123
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C16T03Q C16T04Q 17.7A/30— 40V SQUARE-PAK FEATURES ° Similar to TO-263AB Case, Surface Mount Device ° Dual Diodes - Cathode Common » Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available
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C16T03Q
C16T04Q
O-263AB
C16T03Q
LL1S123
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