2SJ349 Search Results

2SJ349

Contextual Info: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ349 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RßS (ON) — 33 mH (Typ.)

j349

Abstract: 2SJ349 transistor j349
Contextual Info: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance

Contextual Info: TO SH IBA 2SJ349 Field Effect Transistor Silicon P Channel M O S Type L2-ji-MOS V High Speed, High Current Switching, D C -D C Converter Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive • Low Drain-Source ON Resistance - R DS(ON)

Contextual Info: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ349 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10 ± 0 .3 r • 4V Gate Drive

j349

Abstract: transistor j349
Contextual Info: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications z Unit: mm 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance

2SJ349

Contextual Info: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications l Unit: mm 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) l High forward transfer admittance

2SJ349

Contextual Info: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M OS TYPE L2-tt-M O SV 2SJ349 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10 ±0.3 ¿3.2 ±0.2

J349

Abstract: 2SJ349 transistor j349
Contextual Info: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance

2SJ349

Contextual Info: 2SJ349 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance

K2312

Abstract: j378 K2314
Contextual Info: L2-7c-MOS V Maximum Rating Application Type No. Id A DC/DC Converter High Current Switching Motor Drive 2SJ360 “2SJ377 •2SJ378 2SJ349 2SJ334 2SJ360 2SK2229 2SK2231 2SK2232 2SK 2311 2SK2233 2SK2266 •2SK2312 •2SK2173 '2SK 2313 '2SK 2267 2SK2200 2SK2201

j349

Abstract: 2SJ349
Contextual Info: 2SJ349 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ349 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 33mΩ (標準) z オン抵抗が低い。

Contextual Info: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ349 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • 4V Gate Drive • Low Drain-Source ON Resistance r DS (ON) = 33m il (Typ.) • High Forward Transfer Admittance

2SJ349

Contextual Info: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance

j349

Abstract: transistor j349 2SJ349
Contextual Info: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378

j349

Abstract: 2SJ349
Contextual Info: 2SJ349 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ349 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 33mΩ (標準) z オン抵抗が低い。

j349

Abstract: transistor j349 2SJ349
Contextual Info: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance

N7C3

Contextual Info: TO SH IB A 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M OSV 2SJ349 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : R d s (ON)=

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

Jab zener

Contextual Info: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)