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    FST6040 Search Results

    FST6040 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FST6040 Coors Components Schottky PowerMod Scan PDF
    FST6040 Microsemi Schottky PowerMod Scan PDF
    FST6040 Microsemi Schottky Powermod Scan PDF
    FST6040A Microsemi Schottky PowerMod Scan PDF
    FST6040D Microsemi Schottky PowerMod Scan PDF

    FST6040 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FST6040A Diodes Center-Tapped Negative CA Schottky Rectifier I O Max.(A) Output Current60 @Temp (øC) (Test Condition)135# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.2k¥ V(FM) Max.(V) Forward Voltage700m @I(FM) (A) (Test Condition)60


    Original     		PDF FST6040A Current60 Voltage40 Voltage700m Current30m

    Untitled

    Abstract: No abstract text available
    Text: FST6040 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current60 @Temp (øC) (Test Condition)135# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.2k¥ V(FM) Max.(V) Forward Voltage700m @I(FM) (A) (Test Condition)60


    Original     		PDF FST6040 Current60 Voltage40 Voltage700m Current30m

    laser range finder schematics

    Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
    Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals


    Original     		PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    FST6050

    Abstract: FST6035 FST6040 FST6045
    Text: Schottky Powermod FST6035 - FST6050 N 4-PLCS. A 1 2 3 Common Cathode C E 1 2 3 L P K 1.200 9 Pins eq at .150 F G H 1 2 3 A=Common Anode J 1 2 3 D=Doubler Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper M Microsemi Catalog Number


    Original     		PDF FST6035 FST6050 FST6050 FST6040 FST6045

    MBR140P

    Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
    Text: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT


    Original     		PDF 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FYP1504DN MBR140P 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


    Original     		PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    FST6035

    Abstract: FST6040 FST6045 FST6050
    Text: Schottky Powermod FST 60 P Millimeter Dim. Inches Minimum Maximum minimum Maximum Notes A C E F G H J K L M N P Microsemi Catalog Number Working Peak Reverse Voltage FST6035* FST6040* FST6045» FST6050* 35V 40V 45V 50V 1.995 0.495 0.990 2.390 1.4-90 0.120


    OCR Scan     		PDF FST6035* FST6040* FST6045* FST6050Â C-183 FST6035 FST6040 FST6045 FST6050

    BYS98-50

    Abstract: BYS98-40 BYS98-35 BYS98-45 FST6035 FST6040 FST6045 FST6050
    Text: COORS COMPONENTS I - INC 02 Schottky PowerMod Ï E I aM3DDDb . 820 00 1 3 7 D FST60 03- X - Electrically Isolated Base Guard ring reverse protection Center Tap 50 Volts VRRMI VpvjU 60 Amperes 175°C Junction Temperature Dim. Inches A C E F


    OCR Scan     		PDF FST60 BYS98-50 BYS98-40 BYS98-35 BYS98-45 FST6035 FST6040 FST6045 FST6050

    FST6035

    Abstract: FST6040 FST6045 FST6050 660T
    Text: Scho ttky Powermod FST6035 m FST6050 N 4-PLCS. 1 2 3 Common Cathode Y m r j , 200 9 Pins eq a t .150 H - F |— G- K II. 1 2 3 A=Common Anode m J 1 I I— ♦ 1 2 3 D=Doubler J Notes: Baseplate: Nickel plated copper; electrically isolated


    OCR Scan     		PDF FST6035 FST6050 FST6040 FST6045 FST6050 660T

    SCH13

    Abstract: 220S9
    Text: Schottkv Rectifiers Part Number Microsemi Division Package Outline 1Type Micmsemi Mil Data 10 VR IFSM VF @ IO Spec Sheet ID Amps (Volts) (Amps) (Volts) 1 FST10035 FST10135 FST16035 FST10040 FST10140 FST16040 FST10145 FST10045 MSASC100H45H MSASC100H45H FST16045


    OCR Scan     		PDF SCH-13 SCH13 220S9

    FST6035

    Abstract: FST6040 FST6045 FST6050
    Text: Schottky Powermod FST6035 - FST6050 rl>hH <h o o 1 2 3 Common Cathode rK brt>h o o 1 2 3 A=Common Anode G ~ i 1 1 2 3 D=Doubler h . i I MJ |_ Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper t M icrosemi


    OCR Scan     		PDF FST6035 FST6050 FST6040 FST6045 FST6050