K2162
Abstract: 2SJ338 2SK2162
Text: 2SK2162 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。
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2SK2162
2SJ338
SC-64
K2162
2002/95/EC)
K2162
2SJ338
2SK2162
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toshiba audio power amplifier
Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
SC-64
toshiba audio power amplifier
Audio Power Amplifier TOSHIBA
2SJ338
2SK2162
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: Toshiba 2SJ toshiba marking code transistor
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm
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2SK2162
2SJ338
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Toshiba 2SJ
toshiba marking code transistor
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2SJ338
Abstract: 2SK2162 K2162
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage
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2SK2162
2SJ338
2SJ338
2SK2162
K2162
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2SJ338
Abstract: 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
2SJ338
2SK2162
J338
Toshiba 2SJ
toshiba marking code transistor
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Untitled
Abstract: No abstract text available
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage
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2SK2162
2SJ338
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toshiba audio power amplifier
Abstract: K2162 toshiba Ta 2SJ338 2SK2162 K2-16 Toshiba 2SJ
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2162 Audio Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338
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2SK2162
2SJ338
SC-64
toshiba audio power amplifier
K2162
toshiba Ta
2SJ338
2SK2162
K2-16
Toshiba 2SJ
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Toshiba 2SJ
Abstract: toshiba marking code transistor 2-7J1B
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
Toshiba 2SJ
toshiba marking code transistor
2-7J1B
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2SJ338
Abstract: 2SK2162 J338
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. 0.6 MAX. 5.5 ± 0.2 5.2 ± 0.2 1.7 ± 0.2
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2SJ338
2SK2162
2SJ338
2SK2162
J338
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: 2SJ338 2SK2162 K2162 Toshiba 2SJ toshiba marking code transistor
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm
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PDF
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2SK2162
2SJ338
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
2SJ338
2SK2162
K2162
Toshiba 2SJ
toshiba marking code transistor
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2SJ338
Abstract: 2SK2162 Toshiba 2SJ
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
SC-64
2SJ338
2SK2162
Toshiba 2SJ
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2SJ338
Abstract: 2SK2162 J338
Text: 2SJ338 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ338 単位: mm ○ 低周波電力増幅用 1.7 ± 0.2 6.8 MAX. z 高順方向伝達アドミタンスです。 : |Yfs| = 0.7S 標準 z 2SK2162 とコンプリメンタリになります。
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2SJ338
-180V
2SK2162
SC-64
2002/95/EC)
2SJ338
2SK2162
J338
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J338
Abstract: Toshiba 2SJ
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)
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PDF
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2SJ338
2SK2162
SC-64
J338
Toshiba 2SJ
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: Toshiba 2SJ 2sk2162
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338
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2SK2162
2SJ338
SC-64
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Toshiba 2SJ
2sk2162
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J338
Abstract: 2SK2162 2SJ338 Toshiba 2SJ
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
SC-64
J338
2SK2162
2SJ338
Toshiba 2SJ
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toshiba lot number type
Abstract: 2SJ338 2SK2162 Toshiba 2SJ
Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.
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OCR Scan
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2SJ338
2SK2162
SC-64
-10mA,
-10mA
toshiba lot number type
Toshiba 2SJ
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ 338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V;ogg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.
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PDF
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2SJ338
2SK2162
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : ^ D S S ~ —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.
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PDF
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2SJ338
--180V
2SK2162
--10mA
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS High Breakdown Voltage : Vj gg= —180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)
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OCR Scan
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PDF
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2SJ338
--180V
2SK2162
--10mA,
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Transistor ERA - 3
Abstract: 2SJ338 2SK2162 Toshiba 2SJ
Text: TO SH IBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AU D IO FREQUENCY POWER AMPLIFIER APPLICATION INDUSTRIAL APPLICATIONS Unit in mm • High Breakdown Voltage : Vßgg = —180 V • High Forward Transfer Admittance : |Yfs| = 0.7 S Typ.
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PDF
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2SJ338
2SK2162
-10mA,
-10mA
Transistor ERA - 3
2SJ338
2SK2162
Toshiba 2SJ
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toshiba Ta
Abstract: 2SJ338 2SK2162
Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. • Complementary to 2SJ338 INDUSTRIAL APPLICATIONS
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OCR Scan
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PDF
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2SK2162
2SJ338
K2162
toshiba Ta
2SJ338
2SK2162
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toshiba lot number type
Abstract: 2SJ338 2SK2162 Transistor ERA - 3 Toshiba 2SJ
Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.
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OCR Scan
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PDF
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2SJ338
2SK2162
-10mA,
-10mA
toshiba lot number type
2SJ338
2SK2162
Transistor ERA - 3
Toshiba 2SJ
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2SJ338
Abstract: 2SK2162
Text: TO SH IBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : Vßgg = 180 V • High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. • Complementary to 2SJ338
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2SK2162
2SJ338
2SJ338
2SK2162
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2sk1603
Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378
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2SJ115
2SJ123
2SJ126
2SJ147
2SJ183
2SJ200
2SJ201
2SJ224
2SJ238
2SJ239
2sk1603
2SK2236
2SK1723
2SK2222
2sk538
2SK180S
2SK584
2SK1882
2SK1513
2sk1915
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