1771-CJ
Abstract: ss100 transistor PLC-2 Communication cables pin diagram 178-442 DF1 PROTOCOL Allen-Bradley cvim 1784-T35 rack 1771-DA 6008-SI 2801-NC17
Text: ALLEN-BRADLEY Bulletin 5370 CVIM Configurable Vision Input Module Communications Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the Application,
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5370-ND002
1771-CJ
ss100 transistor
PLC-2 Communication cables pin diagram
178-442
DF1 PROTOCOL
Allen-Bradley cvim
1784-T35 rack
1771-DA
6008-SI
2801-NC17
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Allen-Bradley cvim
Abstract: CD1234 5370-CVIM Allen-Bradley OCR
Text: Important User lnforma tion Solid-state equipment has operational characteristics differing from those of electromechanical equipment. “Application Considerations for Solid-State Controls” Publication SGI-1.1 describes some important differences between solid-state equipment and hard wired
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5370-ND0017
O-9436
623-l
Allen-Bradley cvim
CD1234
5370-CVIM
Allen-Bradley OCR
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Power Semiconductor Applications Philips Semiconductors
Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management
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BUK652R0-30C
Abstract: No abstract text available
Text: BUK652R0-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK652R0-30C
BUK652R0-30C
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Untitled
Abstract: No abstract text available
Text: BUK661R6-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK661R6-30C
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K29-100E
LFPAK56D
referen10
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Untitled
Abstract: No abstract text available
Text: BUK661R6-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been
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BUK661R6-30C
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE _ L l_ TDD D bb53T31 001,03TM T • BYV60 SERIES t:o2->7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-238 envelope, featuring fast reverse recovery times with soft recovery characteristics.
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bb53T31
BYV60
O-238
BVV60â
bbS3T31
00103TT
bS3T31
0D104D0
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E bbS3T31 003Dbb5 Ebl * A P X D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3T31
003Dbb5
T0220AB
BUK455-600B
100-IE/
0030bb7
455-600B
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b0945
Abstract: bd947 BD944 BD945 BD943
Text: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA
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BD944;
BD943
lc-500mA
O-220.
BD947.
7Z82147
7Z82146
003MS40
BD945
b0945
bd947
BD944
BD945
BD943
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D 1991 AR
Abstract: BD945
Text: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.
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BD943
BD945
BD947
7110fl2ti
BD944;
O-220.
BD947
D 1991 AR
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Untitled
Abstract: No abstract text available
Text: N AUER PHI L I P S / D I S CR E T E □ bE D bb53T31 DD1SE17 1 RZ1214B65Y T - 3 3 - 5 ~ PULSED M IC R O W A VE POWER TRANSISTOR N:P-N silicon microwave power transistor for use in a common-base, class-B wideband amplifier and operating under pulsed conditions in L-band radar applications.
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bb53T31
DD1SE17
RZ1214B65Y
T-33-IS
7Z94222
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BDT96
Abstract: No abstract text available
Text: BDT92 BDT94 BDT96 PHILIPS INTERNATIONAL SbE D • 7110fi2b 0043332 447 ■ P H I N T-3J-Z1 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications.
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BDT92
BDT94
BDT96
7110fi2b
BDT91,
BDT93
BDT95.
O-220.
BDT96
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BD132
Abstract: FE21
Text: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P tran sisto r in a SOT-32 plastic package fo r general purpose, m edium power applications. N-P-N com plem ent is BD131. Q U IC K R EFE R E N C E D A T A “ v CBO max. 45 V C o lle c to r-e m itte r voltage open base
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BD132
OT-32
BD131.
OT-32)
BD132
FE21
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BYV60
Abstract: No abstract text available
Text: N AMER PHI LI PS/ DI SC RE TE 11 TDD bti53li31 Dm, 03=14 1 D BYV60 SERIES V ô3 - i 7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-238 envelope, featuring fast reverse recovery times w ith soft recovery characteristics.
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BYV60
O-238
BVV60-
m1049
bbS3T31
m2213
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BUZ94
Abstract: mx d 362
Text: PowerMOS transistor_ BUZ94- N AMER PHILIPS/DISCRETE - — - — . “ OtE D • ^1=53^31 DOmt.75 4 ■ " “ r-3 7 -1 3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a
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BUZ94
r-37-13
bb53131
T-39-13
480Vv_
BUZ94
mx d 362
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bd947
Abstract: b0945 BD945 m lc 945 BD943 BD944
Text: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.
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BD943
BD945
BD947
7110fllT\
043070T[
BD944;
T-33-17
BD945
bd947
b0945
m lc 945
BD944
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ARZ1214B65Y
Abstract: RZ1214B65Y
Text: N AMER PHI LI PS /DIS CRET E ObE D ^53131 • 0015217 1 ■ R Z1214B 65Y T PULSED M IC R O W A V E POW ER - 3 3 - ts ~ T R A N S IS T O R N :P-N silicon microwave power transistor for use in a common-base, class-B wideband am plifier and operating under pulsed conditions in L-band radar applications.
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RZ1214B65Y
ARZ1214B65Y
RZ1214B65Y
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BUK455-600B
Abstract: transistor buk455 Philips 34D
Text: PHILIPS INTERN ATI ONAL bSE D m 711GÛ2b 0Db4101 7T5 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0Db4101
BUK455-600B
-T0220AB
711Dfl2b
BUK455-600B
transistor buk455
Philips 34D
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BUK455-600B
Abstract: LG 631
Text: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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711Gfl2b
0Db4101
BUK455-600B
PINNING-T0220AB
BUK455-600B
LG 631
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended fcr use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-600B
T0220AB
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Diode 10aic
Abstract: BUK455-600B philips EBL 31
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 OGaabbS Ebl H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in
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BUK455-600B
-T0220AB
bbS3131
Diode 10aic
BUK455-600B
philips EBL 31
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BUK455-600B
Abstract: BUK455 600B
Text: N AI1ER P H I LI PS /D I SC RE T E bTE D • bbS3^31 003QbbS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in Switched Mode Power Supplies
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D030bbs
BUK455-600B
-T0220AB
BUK455 600B
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BUW11
Abstract: BUW11A buw11 transistor philips rf transistors buw111
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11 ; BUW11A High-voltage, high-speed, glass-passivated npn power transistors in a S0T93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.
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BUW11;
BUW11A
S0T93
BUW11
711002b
0777b?
BUW11A
buw11 transistor
philips rf transistors
buw111
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