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    Text: N AMER PHILIPS/DISCRETE b^E bbS3T31 003Dbb5 Ebl * A P X D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    bbS3T31 003Dbb5 T0220AB BUK455-600B 100-IE/ 0030bb7 455-600B PDF