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    IXYS DIODE Search Results

    IXYS DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    IXYS DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SOT227B package

    Abstract: DSA300 SMPS Solar Battery chargers ixys DSA300I100NA DSA300I200NA DSA300I45NA ups over smps advantages
    Text: FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 32 374 4020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Introduces Its Largest Single Die Schottky Diode For Increased Efficiency In Power Rectification Biel, Switzerland, October 14, 2010 – IXYS Corporation NASDAQ: IXYS , a leader in power


    Original     		OT-227B) SOT227B package DSA300 SMPS Solar Battery chargers ixys DSA300I100NA DSA300I200NA DSA300I45NA ups over smps advantages PDF

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


    Original     		N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219 PDF

    IXYS Colorado Introduces EVLD02-II Evaluation Board for the IXLD02SI Laser Diode Driver IC

    Abstract: EVLD02-II IXLD02SI laser diode driver ic Directed Energy industrial pulse generators schematic EVLD02 Laser Diode driver
    Text: FOR IMMEDIATE RELEASE Contact: Yvonne Clark IXYS Colorado Directed Energy, Inc. Tel: (970) 493-1901 ext. 26 IXYS Colorado Introduces EVLD02-II Evaluation Board for the IXLD02SI Laser Diode Driver IC Fort Collins, CO. July 13, 2010. IXYS Corporation (NASDAQ IXYS), a leader in power


    Original     		EVLD02-II IXLD02SI IXYS Colorado Introduces EVLD02-II Evaluation Board for the IXLD02SI Laser Diode Driver IC laser diode driver ic Directed Energy industrial pulse generators schematic EVLD02 Laser Diode driver PDF

    IXYS Introduces Higher Operating Temperatures for Bi-Polar Modules

    Abstract: MDMA200P1600SA MCMA200P1600SA MCMA200PD1600SA Phase-leg Rectifier Diode
    Text: FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 323 744 020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Introduces Higher Operating Temperatures for Bi-Polar Modules Biel, Switzerland, May 4, 2010 – IXYS Corporation NASDAQ: IXYS , a leader in power


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    LDS8710

    Abstract: solar converter LCD Display backlight Solar home lighting system String Lights
    Text: FOR IMMEDIATE RELEASE IXYS Contact: Dr. Octav Chirica IXYS Corporation Tel: 408-457-9000 IXYS Introduces New LED Driver Family with 40 V Integrated Synchronous Rectifier to drive up to 42 LEDs Milpitas, CA, and Biel, Switzerland. June 29, 2010 – IXYS Corporation NASDAQ: IXYS


    Original     		LDS8710/11, LDS8720/24/26, LDS8711 LDS8710 solar converter LCD Display backlight Solar home lighting system String Lights PDF

    7" LCD DISPLAY

    Abstract: LCD Display backlight LDS8710 solar converter
    Text: FOR IMMEDIATE RELEASE IXYS Contact: Dr. Octav Chirica IXYS Corporation Tel: 408-457-9000 IXYS Introduces Demo Boards for New LED Driver Family with 40 V Integrated Synchronous Rectifier to drive up to 42 LEDs Milpitas, CA, and Biel, Switzerland, August 19, 2010 – IXYS Corporation NASDAQ: IXYS


    Original     		LDS8710/11, LDS8720/24/26, LDS8711 7" LCD DISPLAY LCD Display backlight LDS8710 solar converter PDF

    XYS launches New PolarP2TM Power MOSFET Family

    Abstract: Ixtq460p2 IXFB120N50P2 mosfet ixys IXTH450P2 IXTP450P2 IXTQ450P2 IXTQ470P2 ixtq460
    Text: IXYS Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS launches New PolarP2TM Power MOSFET Family Milpitas, CA. and Biel, Switzerland. July 15, 2010 – IXYS Corporation NASDAQ:IXYS announces today the release of its new PolarP2TM Power MOSFET family, IXYS’ latest generation of fast and


    Original     		12Ohm/nanocoulombs. XYS launches New PolarP2TM Power MOSFET Family Ixtq460p2 IXFB120N50P2 mosfet ixys IXTH450P2 IXTP450P2 IXTQ450P2 IXTQ470P2 ixtq460 PDF

    IGBT inverter calculation

    Abstract: 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V
    Text: IXAN0070 Drive with the IXYS XPT IGBT IXYS used its expertise to design the optimal IGBT for motor drives applications By Iain Imrie, Jeroen van Zeeland, Ulrich Kelberlau, Vladimir Tsukanov and Elmar Wisotzki IXYS Corporation IXYS introduces the XPT IGBT, IXYS newest generation of short-circuit rated IGBTs with paralleling


    Original     		IXAN0070 IGBT inverter calculation 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V PDF

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		CH-2555 N1016, IXEP1400 CPC1706 CPC1020N PDF

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844 PDF

    IXAN0062

    Abstract: 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets mosfet 1000v Silicon MOSFET 1000V mosfets P-Channel Depletion Mosfets depletion mode power mosfet
    Text: IXAN0062 IXYS Power MOSFET Products Abdus Sattar, IXYS Corporation This paper presents IXYS Corporation’s power MOSFET products and their typical application information. Power MOSFETs are widely used in power switching applications due to their features of easy control, fast


    Original     		IXAN0062 IXAN0062 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets mosfet 1000v Silicon MOSFET 1000V mosfets P-Channel Depletion Mosfets depletion mode power mosfet PDF

    MOSFET Based Chopper

    Abstract: MKE11R600DCGFC MOSFET Based Chopper applications MKE11R600DC CoolMOS mosfet 12A 600V Solar inverter power module design of boost chopper circuit
    Text: FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 323 744 020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Releases the Highest Density, Highest Efficiency MOSFET Solution With Silicon Carbide Technology in an Isolated Integrated Package


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    mosfet 1200V 40A

    Abstract: Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160
    Text: IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the


    Original     		IXBH40N160 IXBH40N160, 200ns. mosfet 1200V 40A Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160 PDF

    IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages

    Abstract: IXFZ520N075T2 IXTZ550N055T2
    Text: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages. Milpitas, CA. and Biel, Switzerland. October 5, 2010 – IXYS Corporation NASDAQ:IXYS announces


    Original     		IXTZ550N055T2 IXFZ520N075T2 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages PDF

    IXAN0065

    Abstract: IXTQ130N10T mosfet ixys
    Text: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS provides datasheets with parameters that are essential and useful for selecting the appropriate device as well as for predetecting its performance in an application. The graphs included in the datasheet represent typical performance


    Original     		IXAN0065 IXTH/IXTQ130N10T" IXAN0065 IXTQ130N10T mosfet ixys PDF

    xenon hid ballast

    Abstract: Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram
    Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F ISOPLUS i4-PACTM Half-Bridge MOSFET Modules IXYS Introduces new isolated phase leg modules january 2010 OVERVIEW IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary


    Original     		E153432) com/IXAN0022 xenon hid ballast Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: Welcome to the world of IXYS Semiconductors! IXYS is made up of a team that is dedicated to providing efficient, cost effective, semiconductor solutions to meet a multitude of power control needs. Headquartered in California’s Silicon Valley, IXYS has differentiated itself by focusing on the higher power end of the semiconductor product spectrum.


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    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original     		PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter PDF

    IXAN0022

    Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
    Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS


    Original     		IXAN0022 ISOPLUS220TM, ISOPLUS247TM, ISOPLUS264 ISOPLUS220, ISOLPUS247 advantKU4-498/X ISOPLUS220 KU4-498/X O-247 IXAN0022 KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF

    EVLD02

    Abstract: IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD DEIC420 IXDD414CI RF MOSFETs 10mhz mosfet EVDN404
    Text: MOSFET DRIVER IC'S SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 These ultra-fast high current drivers are optimized to drive IXYS RF MOSFETs and IXYS IGBTs for high efficiency performance in RF generators, laser diode drivers, pulse generators, motor drive and power conversion applications. They


    Original     		O-263 O-220 DEIC420 45MHz. EVDD404 EVDF404 EVLD02 IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD IXDD414CI RF MOSFETs 10mhz mosfet EVDN404 PDF

    PLUS247

    Abstract: ixys diode diode 3000v
    Text: FOR IMMEDIATE RELEASE IXYS Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 e-mail: sales@ixys.net IXYS Introduces New High Voltage 2500V and 3000V BiMOSFETs Biel, Switzerland and Milpitas, CA. October 13, 2009 - IXYS Corporation NASDAQ:


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    Untitled

    Abstract: No abstract text available
    Text: Power Schottky Rectifier Diodes □ IXYS i xvsi>o -e>£ I


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    fast recovery epitaxial diodes

    Abstract: No abstract text available
    Text: wMrn ÏWsw» HiPer Fast Recovery Epitaxial Diodes Reg. Nr. 2743-02 □ IXYS


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