Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFZ520N075T2 Search Results

    SF Impression Pixel

    IXFZ520N075T2 Price and Stock

    IXYS Corporation IXFZ520N075T2

    MOSFET N-CH 75V 465A DE475
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFZ520N075T2 Tube 1
    • 1 $44.15
    • 10 $41.186
    • 100 $35.7602
    • 1000 $35.7602
    • 10000 $35.7602
    		Buy Now
    Mouser Electronics IXFZ520N075T2
    • 1 $44.16
    • 10 $41.19
    • 100 $41.19
    • 1000 $41.19
    • 10000 $41.19
    		Get Quote
    TME IXFZ520N075T2 1
    • 1 $54.63
    • 10 $49.21
    • 100 $39.02
    • 1000 $39.02
    • 10000 $39.02
    		Get Quote

    IXFZ520N075T2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFZ520N075T2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 465A DE-475 Original PDF

    IXFZ520N075T2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFZ520N075T2

    Abstract: No abstract text available
    Text: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings


    Original     		PDF IXFZ520N075T2 DE475 IXFZ520N075T2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ520N075T2 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode D D D G Symbol Test Conditions


    Original     		PDF IXFZ520N075T2 DE475

    MMIX1F520N075T2

    Abstract: IXFZ520N075T2 ixfz520n075
    Text: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F520N075T2 IXFZ520N075T2 MMIX1F520N075T2 IXFZ520N075T2 ixfz520n075

    140tr

    Abstract: No abstract text available
    Text: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F520N075T2 IXFZ520N075T2 140tr

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F520N075T2 IXFZ520N075T2

    IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages

    Abstract: IXFZ520N075T2 IXTZ550N055T2
    Text: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages. Milpitas, CA. and Biel, Switzerland. October 5, 2010 – IXYS Corporation NASDAQ:IXYS announces


    Original     		PDF IXTZ550N055T2 IXFZ520N075T2 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages